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IXFT12N100F [IXYS]

HiPerRF Power MOSFETs; HiPerRF功率MOSFET
IXFT12N100F
型号： IXFT12N100F
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

HiPerRF Power MOSFETs
HiPerRF功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
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Advance Technical Information  
HiPerRFTM  
Power MOSFETs  
F-Class: MegaHertz Switching  
IXFH12N100F VDSS  
IXFT 12N100F ID25  
= 1000 V  
12 A  
=
RDS(on) = 1.05 Ω  
t ≤ 250 ns  
rr  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, Low Intrinsic Rg  
High dV/dt, Low trr  
TO-247AD(IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
(TAB)  
VDSS  
VDGR  
T
T
= 25°C to 150°C  
= 25°C to 150°C; R = 1 MΩ  
1000  
1000  
V
V
J
J
GS  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-268 (IXFT) Case Style  
ID25  
IDM  
IAR  
T
= 25°C  
12  
48  
12  
A
A
A
C
T
= 25°C, pulse width limited by T  
= 25°C  
C
JM  
T
C
G
(TAB)  
S
EAR  
EAS  
T
= 25°C  
= 25°C  
30  
1.0  
mJ  
J
C
T
C
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
dv/dt  
I
T
≤ I , di/dt ≤ 100 A/µs, V ≤ V  
5
V/ns  
S
DM  
DD  
DSS  
≤ 150°C, R = 2 Ω  
J
G
PD  
TJ  
T
= 25°C  
300  
W
C
Features  
l
-55 ... +150  
°C  
RF capable MOSFETs  
l
Double metal process for low gate  
resistance  
Ruggedpolysilicongatecellstructure  
Unclamped Inductive Switching (UIS)  
rated  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
l
l
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Md  
Mountingtorque  
TO-247  
1.13/10 Nm/lb.in.  
l
l
Low package inductance  
- easy to drive and to protect  
Fast intrinsic rectifier  
Weight  
TO-247  
TO-268  
6
4
g
g
Applications  
l
DC-DC converters  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
l
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
J
min. typ. max.  
l
DC choppers  
VGS = 0 V, ID = 1mA  
VDS = VGS, ID = 4mA  
1000  
3.0  
V
l
13.5 MHz industrial applications  
l
VGS(th)  
IGSS  
5.5 V  
Pulse generation  
l
Laser drivers  
V
= ±20 V, V = 0  
±100 nA  
GS  
DS  
l
RF amplifiers  
IDSS  
V
= V  
= 0 V  
50 µA  
1.5 mA  
DS  
DSS  
Advantages  
l
Space savings  
V
T
= 125°C  
GS  
J
l
RDS(on)  
V
Note 1  
= 10 V, I = 0.5 I  
1.05  
Ω
GS  
D
D25  
High power density  
98856 (8/01)  
© 2001 IXYS All rights reserved  
IXFH 12N100F  
IXFT 12N100F  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
J
TO-247 AD Outline  
min. typ. max.  
V
= 10 V; I = 0.5 I  
D25  
Note 1  
8
12  
S
DS  
D
Ciss  
Coss  
Crss  
2700  
305  
93  
pF  
pF  
pF  
1
2
3
Terminals:  
1 - Gate  
V
= 0 V, V = 25 V, f = 1 MHz  
GS  
DS  
2 - Drain  
3 - Source  
Tab - Drain  
td(on)  
tr  
td(off)  
tf  
12  
9.8  
31  
ns  
ns  
ns  
ns  
V
= 10 V, V = 0.5 V , I = 0.5 I  
D25  
GS  
DS  
DSS  
D
R = 2.0 Ω (External)  
G
12  
Dim.  
A
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qg(on)  
Qgs  
77  
16  
42  
nC  
nC  
nC  
A
1
V
= 10 V, V = 0.5 V , I = 0.5 I  
DS DSS D D25  
A
GS  
2
b
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Qgd  
b
1
b
2
RthJC  
RthCK  
0.42 K/W  
K/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
(TO-247)  
0.25  
e
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
L
L1  
Source-DrainDiode  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
P
3.55  
5.89  
3.65 .140 .144  
6.40 0.232 0.252  
Q
J
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Symbol  
TestConditions  
= 0 V  
min. typ. max.  
IS  
V
12  
48  
A
A
GS  
TO-268 Outline  
ISM  
Repetitive;  
pulse width limited by T  
JM  
VSD  
I = I , V = 0 V, Note 1  
1.5  
V
F
S
GS  
trr  
250 ns  
I = I ,-di/dt = 100 A/µs, V = 100 V  
QRM  
IRM  
0.8  
7
µC  
F
S
R
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
Min Recommended Footprint  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
13.6  
e
H
L
5.45 BSC  
18.70 19.10  
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
1.20  
1.40  
.047 .055  
L2  
L3  
L4  
1.00  
0.25 BSC  
3.80 4.10  
1.15  
.039 .045  
.010 BSC  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  

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