IXFT14N100Q [IXYS]
Power Field-Effect Transistor, 14A I(D), 1000V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN;型号: | IXFT14N100Q |
厂家: | IXYS CORPORATION |
描述: | Power Field-Effect Transistor, 14A I(D), 1000V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN 局域网 开关 脉冲 晶体管 |
文件: | 总2页 (文件大小:145K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Q-Class
IXFH 14N100Q
IXFK 14N100Q
IXFT 14N100Q
VDSS
ID25
= 1000 V
14 A
=
RDS(on) = 0.75 Ω
t ≤ 250 ns
N-ChannelEnhancementMode
rr
AvalancheRated, LowQg,Highdv/dt
Preliminarydatasheet
TO-247 AD (IXFH)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
1000
V
V
(TAB)
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
14
56
14
A
A
A
TO-268 (D3) ( IXFT)
G
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mJ
J
S
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
,
5
V/ns
TJ ≤ 150°C, RG = 2 Ω
TO-264 AA (IXF
PD
TC = 25°C
360
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
D
S
D (TAB)
TL
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
°C
G = Gate
S = Source
Md
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
TAB = Drain
Weight
Symbol
TO-247
TO-268
TO-264
6
4
10
g
g
g
Features
l
IXYS advanced low Qg process
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
l
l
min. typ. max.
l
l
l
Low RDS (on) low Qg
Avalanche energy and current rated
Fast intrinsic rectifier
VDSS
VGS = 0 V, ID = 250 µA
1000
3.0
V
V
VGS(th)
VDS = VGS, ID = 4 mA
5.0
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
50 µA
Advantages
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
2
mA
l
Easy to mount
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.75
Ω
l
Space savings
l
High power density
© 2001 IXYS All rights reserved
98858 (9/01)
IXFH 14N100Q IXFK 14N100Q
IXFT 14N100Q
TO-247 AD (IXFH) Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 ID25, pulse test
7
12
S
1
2
3
Terminals:
1 - Gate
Ciss
Coss
Crss
4500
410
pF
pF
pF
2 - Drain
VGS = 0 V, VDS = 25 V, f = 1 MHz
3 - Source
Tab - Drain
150
td(on)
tr
td(off)
tf
28
27
67
14
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Dim.
A
Millimeter
Inches
RG = 2.0 Ω (External),
Min.
Max.
Min.
Max.
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
A
1
A
2
Qg(on)
Qgs
130 170 nC
b
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
b
1
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
31
67
nC
nC
b
2
Qgd
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
RthJC
RthCK
0.35 K/W
e
5.20
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
L
19.81
L1
TO-247
TO-264
0.25
0.15
K/W
K/W
P3.55
3.65
.140
.144
Q
5.89
6.40
0.232
0.252
.216
R
S
4.32
5.49
.170
6.15 BSC
242 BSC
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-264 AA Outline
Symbol
IS
TestConditions
min.
typ. max.
VGS = 0 V
14
A
A
ISM
Repetitive; pulse width limited by TJM
56
VSD
IF = IS, VGS = 0 V,
1.5
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
QRM
IRM
250
ns
µC
A
1
9
IF = IS -di/dt = 100 A/µs, VR = 100 V
Millimeter
Dim.
Inches
Max.
.202
Min.
Max.
Min.
.190
A
4.82
2.54
2.00
5.13
2.89
2.10
A1
A2
.100
.079
.114
.083
TO-268 Outline
b
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
b1
b2
c
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
D
E
e
5.46BSC
.215BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
20.32
2.29
20.83
2.59
.800
.090
.820
.102
L1
P3.17
3.66
.125
.144
Q
6.07
8.38
6.27
8.69
.239
.330
.247
.342
Q1
R
3.81
1.78
4.32
2.29
.150
.070
.170
.090
R1
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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