IXFT12N100Q [IXYS]
HiPerFETTM Power MOSFETs Q Class; HiPerFETTM功率MOSFET Q类
| 型号： | IXFT12N100Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFETTM Power MOSFETs Q Class |
| 文件： | 总4页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Q Class
VDSS ID25 RDS(on)
IXFH/IXFT12N100Q
IXFH/IXFT10N100Q
1000 V12 A 1.05 Ω
1000 V10 A 1.20 Ω
trr ≤ 250 ns
N-ChannelEnhancementMode
AvalancheRated
Low Qg,High dv/dt
Symbol
TestConditions
Maximum Ratings
TO-247AD(IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
1000
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25°C
12N100Q
12
10
48
40
A
A
A
A
10N100Q
12N100Q
10N100Q
TC = 25°C,
TO-268 (D3) ( IXFT)
pulse width limited by TJM
IAR
TC = 25°C
TC = 25°C
12N100Q
10N100Q
12
10
30
A
A
G
EAR
mJ
(TAB)
S
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
5
V/ns
G = Gate
D
= Drain
S = Source
TAB = Drain
PD
TC = 25°C
300
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
°C
Features
Md
1.13/10 Nm/lb.in.
z
IXYS advanced low Qg process
Low gate charge and capacitances
- easier to drive
Weight
TO-247 AD
TO-268
6
4
g
g
z
Symbol
TestConditions
Characteristic Values
- faster switching
(TJ = 25°C, unless otherwise specified)
z
z
z
International standard packages
Low RDS (on)
Unclamped Inductive Switching (UIS)
rated
min.
typ.
max.
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 4 mA
1000
V
V
z
VGS(th)
2.5
5.5
Molding epoxies meet UL 94 V-0
flammability classification
IGSS
VGS = ±20 VDC, VDS = 0
±100
nA
Advantages
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
T = 25°C
50
1
µA
TJJ = 125°C
mA
z
Easy to mount
Space savings
z
RDS(on)
VGS = 10 V, ID = 0.5 ID25
12N100Q
10N100Q
1.05
1.20
Ω
Ω
z
High power density
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2002 IXYS All rights reserved
97539D(12/02)
IXFH/IXFT 12N100Q
IXFH/IXFT 10N100Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXFH) Outline
VDS = 15 V; ID = 0.5 • ID25, pulse test
4
10
S
1
2
3
Ciss
Coss
Crss
2900
315
50
pF
pF
pF
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
20
23
40
15
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 Ω (External),
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
Qg(on)
Qgs
Qgd
90
30
40
nC
nC
nC
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
RthJC
RthCK
0.42
K/W
K/W
(TO-247)
0.25
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R
S
4.32
6.15 BSC
5.49
.170
242 BSC
.216
Symbol
IS
TestConditions
VGS = 0 V
12
48
A
TO-268 Outline
ISM
Repetitive; pulse width limited by TJM
A
V
VSD
IF = I , VGS = 0 V,
1.5
PulsSe test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
200
0.6
7
ns
µC
A
QRM
IRM
IF = IS, -di/dt = 100 A/µs, VR = 100 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
IXFH/IXFT 12N100Q
IXFH/IXFT 10N100Q
15
12
9
20
16
12
8
V
GS = 10V
TJ = 125OC
VGS = 10V
TJ = 25OC
9V
8V
7V
9V
8V
7V
6V
5V
6V
6
3
4
5V
0
0
0
6
12
18
24
30
0
4
8
12
16
20
VDS - Volts
Figure 2. Output Characteristics at 125OC
VDS - Volts
Figure 1. Output Characteristics at 25OC
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
2.5
VGS = 10V
VGS = 10V
TJ = 125OC
2.0
1.5
1.0
I
D = 12A
TJ = 25OC
ID = 6A
0
4
8
12
16
20
25
50
75
100
125
150
ID - Amperes
Figure 3. RDS(on) normalized to value at ID = 12A
TJ - Degrees C
Figure 4. RDS(on) normalized to value at ID = 12A
16
12
8
12
10
8
6
TJ = 125oC
4
4
TJ = 25oC
2
0
0
-50 -25
0
25 50 75 100 125 150
3
4
5
6
7
TC - Degrees C
VGS - Volts
Figure5.DrainCurrentvs.CaseTemperature
Figure6. AdmittanceCurves
© 2002 IXYS All rights reserved
IXFH/IXFT 12N100Q
IXFH/IXFT 10N100Q
12
10
8
5000
2500
Ciss
VDS = 500V
ID = 6A
f = 1MHz
1000
500
Coss
6
250
4
Crss
2
100
50
0
0
20
40
60
80
100
0
5
10 15 20 25 30 35 40
Gate Charge - nC
VDS - Volts
Figure7. GateCharge
Figure8.CapacitanceCurves
30
100
10
1
25
20
15
10
5
0.1ms
1ms
TJ = 125OC
TC = 25OC
10ms
100ms
TJ = 25OC
DC
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
10
100
1000
VSD - Volts
VDS - Volts
Figure 10. Forward Bias Safe Operating Area
Figure 9. Source Current vs. Source to Drain Voltage
1
D=0.5
D=0.2
0.1
D=0.1
D=0.05
D=0.02
Single pulse
0.01
D=0.01
D = Duty Cycle
0.001
10-5
10-4
10-3
10-2
Pulse Width - Seconds
10-1
100
101
Figure11.TransientThermalResistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
相关型号：
IXFT13N100
Power Field-Effect Transistor, 13A I(D), 1000V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN
IXYS
IXFT14N100Q
Power Field-Effect Transistor, 14A I(D), 1000V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明