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IXFT12N50F [IXYS]

HiPerRF Power MOSFETs F-Class: MegaHertz Switching; HiPerRF功率MOSFET F级：兆赫切换
IXFT12N50F
型号： IXFT12N50F
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

HiPerRF Power MOSFETs F-Class: MegaHertz Switching
HiPerRF功率MOSFET F级：兆赫切换
文件： 总2页 (文件大小：304K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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Advanced Technical Information  
HiPerRFTM  
Power MOSFETs  
F-Class: MegaHertz Switching  
IXFH 12N50F  
IXFT 12N50F  
VDSS  
ID25  
= 500 V  
= 12 A  
RDS(on) = 0.4 W  
trr £ 250 ns  
N-ChannelEnhancementMode  
AvalancheRated, Low Qg, Low Intrinsic Rg  
High dV/dt, Low trr  
TO-247AD(IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
(TAB)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
500  
500  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-268 (IXFT) Case Style  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
12  
48  
12  
A
A
A
G
(TAB)  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
20  
300  
mJ  
mJ  
S
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
5
V/ns  
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
PD  
TJ  
TC = 25°C  
180  
W
Features  
l RF capable MOSFETs  
-55 ... +150  
°C  
l Double metal process for low gate  
resistance  
l Low RDS (on) HDMOSTM process  
l Rugged polysilicon gate cell structure  
l Unclamped Inductive Switching (UIS)  
rated  
l Low package inductance  
- easy to drive and to protect  
l Fast intrinsic rectifier  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque  
TO-264  
0.4/6 Nm/lb.in.  
Weight  
TO-247  
TO-264  
6
4
g
g
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
DC-DC converters  
l
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
VDSS  
VGS = 0 V, ID = 250uA  
500  
3.0  
V
l
DC choppers  
l 13.5 MHz industrial applications  
l Pulse generation  
VGS(th)  
VDS = VGS, ID = 2.5 mA  
5.0 V  
IGSS  
VGS = ±20 V, VDS = 0  
±100 nA  
l Laser drivers  
RF amplifiers  
l
IDSS  
VDS = 0.8 • VDSS  
VGS = 0 V  
50 mA  
1 mA  
TJ = 125°C  
Advantages  
Space savings  
High power density  
l
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
0.4 W  
l
98737 (07/00)  
© 2000 IXYS All rights reserved  
IXFH 12N50F  
IXFT 12N50F  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
VDS = 10 V; ID = 0.5 • ID25  
Note 1  
6
10  
S
Ciss  
Coss  
Crss  
1870  
290  
90  
pF  
pF  
pF  
1
2
3
Terminals:  
1 - Gate  
2 - Drain  
3 - Source  
Tab - Drain  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
11  
14  
28  
8
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 4.7 W (External),  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qg(on)  
Qgs  
54  
18  
25  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Qgd  
RthJC  
RthCK  
0.65 K/W  
K/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
(TO-247)  
0.25  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ÆP 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Symbol  
TestConditions  
IS  
VGS = 0 V  
12  
48  
A
A
TO-268 Outline  
ISM  
Repetitive;  
pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V, Note 1  
1.5  
V
trr  
250 ns  
IF = IS,-di/dt = 100 A/ms, VR = 100 V  
QRM  
IRM  
0.8  
6.5  
mC  
A
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
Min Recommended Footprint  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
13.6  
e
H
L
5.45 BSC  
18.70 19.10  
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
1.20  
1.40  
.047 .055  
L2  
L3  
L4  
1.00  
0.25 BSC  
3.80 4.10  
1.15  
.039 .045  
.010 BSC  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  

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