IXFT140N10P [IXYS]
PolarHV HiPerFET Power MOSFETs; PolarHV HiPerFET功率MOSFET
| 型号： | IXFT140N10P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV HiPerFET Power MOSFETs |
| 文件： | 总5页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
IXFH 140N10P
IXFT 140N10P
VDSS = 100 V
PolarHVTM HiPerFET
Power MOSFETs
ID25
= 140 A
RDS(on)
=
11 mΩ
N-ChannelEnhancementMode
FastIntrinsicDiode;AvalancheRated
TO-247(IXFT)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
100
100
V
V
G
D (TAB)
VGSM
20
V
D
S
ID25
TC = 25°C
140
75
A
A
A
ID(RMS)
IDM
External lead current limit
TC = 25°C, pulse width limited by TJM
300
TO-268(IXFT)
IAR
TC = 25°C
60
A
EAR
EAS
TC = 25°C
TC = 25°C
80
mJ
J
2.5
G
S
D (TAB)
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
10
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
TC = 25°C
600
W
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
Md
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
Weight
TO-247
TO-268
6.0
5.0
g
g
Symbol
TestConditions
Characteristic Values
Advantages
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
z
Easy to mount
Space savings
High power density
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 4.0 mA
VGS = 20 VDC, VDS = 0
100
V
V
z
3.0
5.0
z
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
500
μA
μA
TJ = 175°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 300 A
11 mΩ
mΩ
9
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
DS99213(02/04)
© 2004 IXYS All rights reserved
IXFH 140N10P
IXFT 140N10P
Symbol
gfs
TestConditions
Characteristic Values
TO-247 AD Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
45
65
S
Ciss
Coss
Crss
4700
1850
600
pF
pF
pF
1
2
3
td(on)
tr
td(off)
tf
35
50
85
26
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 4 Ω (External)
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
155
33
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
85
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCK
0.25 K/W
K/W
(TO-247)
0.21
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-Drain Diode
Characteristic Values
∅P 3.55
3.65
.140 .144
(TJ = 25°C, unless otherwise specified)
Q
5.89
6.40 0.232 0.252
Symbol
IS
TestConditions
Min.
typ.
Max.
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
VGS = 0 V
140
A
A
V
TO-268 Outline
ISM
Repetitive
300
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr
IF = 25 A
120
ns
-di/dt = 100 A/μs
VR = 50 V
QRM
IRM
0.8
6
μC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1 6,162,665
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
6,534,343
6,583,505
IXFH 140N10P
IXFT 140N10P
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
@ 25ºC
ºC
300
270
240
210
180
150
120
90
140
120
100
80
VGS = 10V
9V
V
GS
= 10V
9V
8V
7V
60
8V
40
7V
6V
6
60
20
6V
30
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
1
2
3
4
5
7
8
9
10
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 150
Fig. 4. RDS(on Normalized to 0.5 ID25
Value vs. Junction Temperature
)
ºC
2.4
2.2
2
140
120
100
80
VGS = 10V
9V
VGS = 10V
1.8
1.6
1.4
1.2
1
8V
ID = 140A
7V
6V
60
ID = 70A
40
20
0.8
0.6
5V
2
0
0
0.4
0.8
1.2
1.6
2.4
2.8
3.2
-50 -25
0
25
50
TJ - Degrees Centigrade
75 100 125 150 175
VD S - Volts
Fig. 5. RDS(on) Normalized to 0.5 ID25
Value vs. Drain Current
Fig. 6. Drain Current vs. Case
Temperature
3
90
External Lead Current Limit
2.75
2.5
2.25
2
80
70
60
50
40
30
20
10
0
º
TJ = 175 C
VGS = 10V
1.75
1.5
1.25
1
V
GS
= 15V
º
TJ = 25 C
0.75
-50 -25
0
25
50
TC - Degrees Centigrade
75 100 125 150 175
0
50
100
150 200
I D - Amperes
250
300
350
© 2004 IXYS All rights reserved
IXFH 140N10P
IXFT 140N10P
Fig. 8. Transconductance
Fig. 7. Input Admittance
250
225
200
175
150
125
100
75
90
80
70
60
50
40
30
20
10
0
º
TJ = -40 C
25ºC
150ºC
º
TJ = 150 C
25ºC
-40ºC
50
25
0
4
4.5
5
5.5
6
6.5
7
VG S - Volts
7.5
8
8.5
9
9.5
0
0
1
40
80
120 160 200 240 280 320
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
300
250
200
150
100
50
VDS = 50V
ID = 70A
I
G = 10mA
º
TJ = 150 C
º
TJ = 25 C
0
0.4
0.6
0.8 1
VS D - Volts
1.2
1.4
1.6
20
40
60
80
Q G - nanoCoulombs
100 120 140 160
Fig. 12. Forward-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
100
1000
100
10
º
TJ = 175 C
= 25ºC
TC
RDS(on) Limit
C
iss
25µs
100µs
C
oss
1ms
10ms
C
rss
DC
f = 1MHz
0
5
10
15 20
VDS - Volts
25
30
35
40
10
100
1000
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1 6,162,665
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
6,534,343
6,583,505
IXFH 140N10P
IXFT 140N10P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is ta n c e
1 . 0 0
0 . 1 0
0 . 0 1
0 . 1
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - millis e c o n d s
© 2004 IXYS All rights reserved
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IXYS
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