IXFT12N100QHV [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXFT12N100QHV |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总4页 (文件大小：557K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
VDSS
ID25
RDS(on)
IXFT 10 N100 1000 V 10 A 1.20 Ω
Power MOSFETs
IXFT12 N100 1000 V 12 A 1.05 Ω
N-ChannelEnhancementMode
Highdv/dt, Lowtrr, HDMOSTM Family
trr ≤ 250 ns
Preliminary data sheet
TO-268 Case Style
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
T
= 25°C to 150°C
1000
1000
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ
G
S
(TAB)
VGS
Continuous
Transient
20
30
V
V
VGSM
ID25
IDM
IAR
TC = 25°C
10N100
12N100
10N100
12N100
10N100
12N100
10
12
40
48
10
12
A
A
A
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
G = Gate,
TAB = Drain
S = Source,
EAR
TC = 25°C
30
mJ
5
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
V/ns
Features
z
International standard package
PD
TJ
TC = 25°C
300
W
z
Low RDS (on) HDMOSTM process
-55 ... +150
°C
°C
°C
z
Rugged polysilicon gate cell
structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
TJM
150
z
Tstg
-55 ... +150
TL
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
°C
z
z
Md
1.13/10 Nm/lb.in.
TO-268 = 6 g
Weight
Applications
z
DC-DC converters
z
Synchronous rectification
Symbol
TestConditions
Characteristic Values
z
Battery chargers
(TJ = 25°C, unless otherwise specified)
z
min. typ. max.
Switched-mode and resonant-mode
power supplies
z
VDSS
VGS(th)
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 4 mA
1000
2.0
V
V
DC choppers
z
4.5
AC motor control
z
Temperature and lighting controls
IGSS
IDSS
VGS = 20 VDC, VDS = 0
100 nA
z
Low voltage relays
VDS = 0.8 • VDSS
VGS = 0 V
T = 25°C
TJJ = 125°C
250 µA
Advantages
1
mA
z
Surface mountable, high power
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
10N100
12N100
1.20
1.05
Ω
Ω
package
z
Space savings
High power density
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
z
© 2004 IXYS All rights reserved
DS98509A(01/04)
IXFT 10N100 IXFT 12N100
Symbol
gfs
TestConditions
Characteristic Values
TO-268 Outline
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
6
10
S
Ciss
Coss
Crss
4000
310
70
pF
pF
pF
td(on)
tr
td(off)
tf
21
33
62 100
32 50
50
50
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 Ω (External),
Qg(on)
Qgs
Qgd
122 155
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
30
50
45
80
RthJC
0.42 K/W
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
10N100
12N100
10
12
A
A
ISM
Repetitive;
10N100
12N100
40
48
A
A
pulse width limited by TJM
VSD
IF = I , VGS = 0 V,
1.5
V
PulsSe test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
T = 25°C
250 ns
400 ns
TJJ = 125°C
I = IS
-Fdi/dt = 100 A/µs,
QRM
IRM
T = 25°C
1
2
µC
µC
TJJ = 125°C
VR = 100 V
T = 25°C
TJJ = 125°C
10
15
A
A
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXFT 10N100 IXFT 12N100
Fig. 1. OutputCharacteristics
Fig. 2. Input Admittance
20
18
16
14
12
10
8
20
TJ = 25°C
V
GS = 10V
18
16
14
12
10
8
7V
6V
5V
TJ = 25°C
6
6
4
4
2
2
0
0
0
5
10
15
20
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig. 3. RDS(on) vs. DrainCurrent
Fig.4.TemperatureDependence
of Drain to Source Resistance
1.5
1.4
1.3
1.2
1.1
1.0
0.9
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
TJ = 25°C
VGS = 10V
I
D = 6A
V
GS = 15V
0
5
10
15
20
25
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
ID - Amperes
Fig. 5. Drain vs. Case Temperature
Fig.6.TemperatureDependenceof
BreakdownandThresholdVoltage
20
18
16
14
12
10
8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
VGS(th)
BVDSS
12N100
10N100
6
4
2
0
-50 -25
0
25 50 75 100 125 150
TC - Degrees C
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
© 2004 IXYS All rights reserved
IXFT 10N100 IXFT 12N100
Fig. 7. GateChargeCharacteristicCurve
10
9
8
7
6
5
4
3
2
1
0
VDS = 500V
ID = 6A
IG = 10mA
0
25
50
75
100
125
150
Gate Charge - nCoulombs
Fig. 8. CapacitanceCurves
Fig. 9. Source Current vs. Source
to Drain Voltage
4500
4000
3500
3000
2500
2000
1500
1000
500
20
18
16
14
12
10
8
Ciss
f = 1MHz
VDS = 25V
TJ = 125°C
6
TJ = 25°C
4
Coss
Crss
2
0
0
0
5
10
15
20
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDS - Volts
VSD - Volts
Fig.10.
TransientThermalImpedance
1
0.1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
0.01
0.001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
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