IXFT120N25T [IXYS]
Power Field-Effect Transistor, 120A I(D), 250V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN;
| 型号： | IXFT120N25T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 120A I(D), 250V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN |
| 文件： | 总6页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
TrenchTM HiperFETTM
Power MOSFETs
VDSS = 250V
ID25 = 120A
RDS(on) ≤ 23mΩ
IXFT120N25T
IXFH120N25T
N-Channel Enhancement Mode
Avalanche Rated
TO-268 (IXFT)
Fast Intrinsic Rectifier
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
250
250
V
V
VDGR
TO-247 (IXFH)
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
120
300
A
A
G
D
D (Tab)
S
IA
EAS
TC = 25°C
TC = 25°C
60
500
A
mJ
G = Gate
S = Source
D
= Drain
PD
TC = 25°C
890
20
W
Tab = Drain
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
V/ns
TJ
-55 to +150
+150
°C
°C
°C
TJM
Tstg
Features
-55 to +150
TL
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z
International Standard Packages
Avalanche Rated
High Current Handling Capability
Fast Intrinsic Rectifier
Low RDS(on)
z
z
z
z
TSOLD
Md
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
Weight
TO-268
TO-247
4
6
g
g
Advantages
z
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, Unless Otherwise Specified)
Min.
250
3.0
Typ.
Max.
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = ±20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
5.0
Applications
±200 nA
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
IDSS
25 μA
z
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Note 1
1.5 mA
z
RDS(on)
23 mΩ
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
z
z
z
z
High Speed Power Switching
Applications
© 2011 IXYS CORPORATION, All Rights Reserved
DS100384A(11/11)
IXFT120N25T
IXFH120N25T
Symbol
Test Conditions
Characteristic Values
TO-268 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
65
105
S
Ciss
Coss
Crss
11.3
1025
136
nF
pF
pF
td(on)
tr
td(off)
tf
32
16
46
19
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Terminals: 1 - Gate
3 - Source
2,4 - Drain
Qg(on)
Qgs
180
60
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
47
RthJC
RthCS
0.14 °C/W
°C/W
TO-247
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
120
480
1.4
IS
VGS = 0V
A
A
V
TO-247 Outline
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
trr
IRM
QRM
108
21
1.1
ns
A
μC
∅ P
IF = 60A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
1
2
3
e
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
PRELIMINARY TECHNICAL INFORMATION
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFT120N25T
IXFH120N25T
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
120
100
80
60
40
20
0
VGS = 10V
8V
VGS = 10V
250
200
150
100
50
8V
7V
7V
6V
6V
5V
5V
0
0
5
10
15
20
25
0
0
0
0.5
1
1.5
2
2.5
3
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 60A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
120
100
80
60
40
20
0
2.8
2.4
2.0
1.6
1.2
0.8
0.4
VGS = 10V
7V
VGS = 10V
6V
I D = 120A
I D = 60A
5V
4V
1
2
3
4
5
6
7
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 60A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
140
120
100
80
VGS = 10V
TJ = 125ºC
60
40
TJ = 25ºC
20
0
40
80
120
160
200
240
280
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
ID - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
IXFT120N25T
IXFH120N25T
Fig. 8. Transconductance
Fig. 7. Input Admittance
180
160
140
120
100
80
180
160
140
120
100
80
TJ = - 40ºC
TJ = 125ºC
25ºC
- 40ºC
25ºC
125ºC
60
60
40
40
20
20
0
0
0
20
40
60
80
100
120
140
160
180
3.0
0.4
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
1.3
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
350
300
250
200
150
100
50
10
9
8
7
6
5
4
3
2
1
0
VDS = 125V
I
D = 60A
I G = 10mA
TJ = 125ºC
TJ = 25ºC
0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
20
40
60
80
100
120
140
160
180
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area @ TC = 25ºC
Fig. 11. Capacitance
1000
100
10
100,000
10,000
1,000
100
= 1 MHz
f
RDS(on) Limit
C
C
iss
25µs
100µs
oss
T
T
= 150ºC
= 25ºC
J
C
rss
C
Single Pulse
1ms
1
10
1
10
100
1000
5
10
15
20
25
30
35
VDS - Volts
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT120N25T
IXFH120N25T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
32
28
24
20
16
12
32
28
24
20
16
12
RG = 2Ω , VGS = 10V
RG = 2ꢀ , VGS = 10V
VDS = 125V
VDS = 125V
TJ = 125ºC
I D = 120A
I D = 60A
TJ = 25ºC
25
35
45
55
65
75
85
95
105
115
125
60
70
80
90
100
110
120
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
500
450
400
350
300
250
200
150
100
50
120
34
90
80
70
60
50
40
30
110
100
90
tr
TJ = 125ºC, VGS = 10V
DS = 125V
td(on)
- - - -
tf
RG = 2ꢀ, VGS = 10V
DS = 125V
td(off) - - - -
30
26
22
18
14
10
V
V
80
70
I D = 120A
I D = 60A, 120A
60
50
I D = 60A
40
30
0
20
25
35
45
55
65
75
85
95
105
115
125
2
4
6
8
10
12
14
16
18
TJ - Degrees Centigrade
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
35
100
80
60
40
20
500
450
400
350
300
250
200
150
100
50
400
360
320
280
240
200
160
120
80
t f
TJ = 125ºC, VGS = 10V
DS = 125V
td(off) - - - -
t f
RG = 2ꢀ, VGS = 10V
DS = 125V
td(off
) - - - -
I D = 120A
30
25
20
15
V
V
TJ = 125ºC
I D = 60A
TJ = 25ºC
40
0
0
2
4
6
8
10
12
14
16
18
60
70
80
90
ID - Amperes
100
110
120
RG - Ohms
© 2011 IXYS CORPORATION, All Rights Reserved
IXFT120N25T
IXFH120N25T
Fig. 19. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_120N25T(8G)9-19-11
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