首页 |元器件品牌

IXFT120N25X3HV [LITTELFUSE]

Power Field-Effect Transistor,;
IXFT120N25X3HV
型号： IXFT120N25X3HV
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
文件： 总7页 (文件大小：312K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Preliminary Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 250V  
ID25 = 120A  
RDS(on) 12m  
IXFT120N25X3HV  
IXFQ120N25X3  
IXFH120N25X3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268HV (IXFT)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-3P (IXFQ)  
TJ = 25C to 150C  
250  
250  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
120  
230  
A
A
D (Tab)  
TO-247 (IXFH)  
IA  
TC = 25C  
TC = 25C  
60  
A
J
EAS  
1.2  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
480  
G
D
S
TJ  
-55 ... +150  
150  
C  
C  
C  
D (Tab)  
D = Drain  
TJM  
Tstg  
G = Gate  
S = Source  
-55 ... +150  
Tab = Drain  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-247 & TO-3P)  
1.13 / 10  
Nm/lb.in  
Weight  
TO-268HV  
TO-3P  
TO-247  
4.0  
5.5  
6.0  
g
g
g
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
High Power Density  
Easy to Mount  
Space Savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
250  
V
V
2.5  
4.5  
100 nA  
Applications  
IDSS  
10 A  
500 A  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
10  
12 m  
DS100837C(11/17)  
© 2017 IXYS CORPORATION, All Rights Reserved.  
IXFT120N25X3HV IXFQ120N25X3  
IXFH120N25X3  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
54  
90  
S
RGi  
1.6  
Ciss  
Coss  
Crss  
7870  
1260  
2
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
500  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
DS = 0.8 • VDSS  
1900  
V
td(on)  
tr  
td(off)  
tf  
29  
32  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
100  
12  
RG = 5(External)  
Qg(on)  
Qgs  
122  
40  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
34  
RthJC  
RthCS  
0.26 C/W  
C/W  
TO-247& TO-3P  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
120  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
480  
1.4  
V
trr  
QRM  
IRM  
140  
880  
12.6  
ns  
IF = 60A, -di/dt = 100A/μs  
nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFT120N25X3HV IXFQ120N25X3  
IXFH120N25X3  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
120  
100  
80  
60  
40  
20  
0
400  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
9V  
V
= 10V  
GS  
GS  
8V  
7V  
9V  
8V  
7V  
6V  
5V  
6V  
5V  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 60A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
120  
100  
80  
60  
40  
20  
0
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 120A  
D
I
= 60A  
D
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
2.5  
3
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 60A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
o
T = 125 C  
J
BV  
DSS  
o
T = 25 C  
J
V
GS(th)  
100  
-60  
-40  
-20  
0
20  
40  
60  
80  
120  
140  
160  
50  
100  
150  
200  
250  
300  
350  
400  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved.  
IXFT120N25X3HV IXFQ120N25X3  
IXFH120N25X3  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
60  
o
T
J
= 125 C  
60  
o
25 C  
40  
o
- 40 C  
40  
20  
20  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
180  
160  
140  
120  
100  
80  
500  
400  
300  
200  
100  
0
o
T = - 40 C  
J
o
25 C  
o
125 C  
60  
o
T = 125 C  
J
40  
o
T = 25 C  
J
20  
0
0
50  
100  
150  
200  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
V
= 125V  
DS  
I
I
= 60A  
D
G
C
C
iss  
= 10mA  
oss  
C
rss  
10  
= 1 MHz  
f
1
0
20  
40  
60  
80  
100  
120  
1
10  
100  
1,000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFT120N25X3HV IXFQ120N25X3  
IXFH120N25X3  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
1000  
100  
10  
16  
14  
12  
10  
8
R
DS(  
on  
Limit  
)
25μs  
100μs  
6
4
1
o
1ms  
T = 150 C  
J
o
T
C
= 25 C  
2
10ms  
Single Pulse  
DC  
0
0.1  
0
50  
100  
150  
200  
250  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.4  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved.  
IXYS REF: F_120N25X3 (26-S251) 5-24-17  
IXFT120N25X3HV IXFQ120N25X3  
IXFH120N25X3  
TO-268HV Outline  
PINS:  
1 - Gate 2 - Source  
3 - Drain  
TO-247 Outline  
D
A
A
TO-3P Outline  
0P  
+
B
O 0K M D B M  
E
A2  
A2  
Q
S
D2  
+
+
R
D1  
D
0P1  
4
1
2
3
ixys option  
C
L1  
E1  
L
A1  
b
b2  
c
b4  
PINS: 1 - Gate  
e
+
O
2, 4 - Drain  
3 - Source  
J
M
C
A M  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

相关型号：

IXFT120N30X3HV

 Power Field-Effect Transistor,
IXYS

IXFT12N100

 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXYS

IXFT12N100F

 HiPerRF Power MOSFETs
IXYS

IXFT12N100Q

 HiPerFETTM Power MOSFETs Q Class
IXYS

IXFT12N100QHV

 Power Field-Effect Transistor,
IXYS

IXFT12N50F

 HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXYS

IXFT12N90Q

 HiPerFET Power MOSFETs Q Class
IXYS

IXFT13N100

 Power Field-Effect Transistor, 13A I(D), 1000V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN
IXYS

IXFT13N80Q

 HiPerFET Power MOSFETs Q Class
IXYS

IXFT13N90

 HiPerFET Power MOSFETs
IXYS

IXFT140N10P

 PolarHV HiPerFET Power MOSFETs
IXYS

IXFT14N100

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 14A I(D) | TO-268
ETC
©2020 ICPDF网 联系我们和版权申明