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IXFK150N15P [IXYS]

PolarHT⑩ HiPerFET Power MOSFET; PolarHT⑩ HiPerFET功率MOSFET
IXFK150N15P
型号： IXFK150N15P
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

PolarHT⑩ HiPerFET Power MOSFET
PolarHT⑩ HiPerFET功率MOSFET
文件： 总5页 (文件大小：110K)
中文：  中文翻译
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Advance Technical Information  
PolarHTTM  
IXFH 150N15P  
VDSS = 150 V  
IXFK 150N15P  
HiPerFET  
ID25 = 150 A  
Power MOSFET  
RDS(on) ≤ 13 mΩ  
N-Channel Enhancement Mode  
TO-247(IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
150  
150  
V
TJ = 25°C to 175°C; RGS = 1 MΩ  
V
G
D
S
(TAB)  
VGS  
Continuous  
Transient  
20  
30  
V
V
VGSM  
TO-264(SP) (IXTK)  
ID25  
TC = 25°C  
150  
75  
A
A
A
ID(RMS)  
IDM  
External lead current limit  
TC = 25°C, pulse width limited by TJM  
340  
IAR  
TC = 25°C  
60  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
80  
mJ  
J
G
D (TAB)  
D
S
2.5  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 4 Ω  
,
10  
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC = 25°C  
714  
W
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +175  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-3P  
TO-264  
5.5  
10  
g
g
Symbol  
TestConditions  
Characteristic Values  
Advantages  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
Easy to mount  
Space savings  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 20 VDC, VDS = 0  
150  
V
V
z
z
3.0  
5.0  
High power density  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
500  
µA  
µA  
TJ = 175°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
13 mΩ  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
© 2005 IXYS All rights reserved  
DS99328(02/05)  
IXFH 150N15P  
IXFK 150N15P  
TO-247 AD Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
1
2
3
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
55  
80  
S
Ciss  
Coss  
Crss  
5800  
1730  
400  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
30  
33  
ns  
ns  
ns  
ns  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
RG = 3.3 Ω (External)  
100  
28  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qg(on)  
Qgs  
190  
40  
nC  
nC  
nC  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
105  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
RthJC  
RthCK  
RthCK  
0.21 K/W  
K/W  
TO-247  
TO-264  
0.21  
0.15  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
K/W  
ÆP 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
150  
A
A
V
ISM  
Repetitive  
340  
1.5  
TO-264 Outline  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25 A  
150 ns  
-di/dt = 100 A/µs  
VR = 100 V  
QRM  
0.8  
µC  
Dim.  
Millimeter  
Inches  
Max.  
.202  
Min.  
Max.  
Min.  
.190  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.100  
.079  
.114  
.083  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
c
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
E
e
5.46BSC  
.215BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
6.04  
6.30  
.238  
.248  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
IXTK 150N15P  
IXTQ 150N15P  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
150  
120  
90  
60  
30  
0
330  
300  
270  
240  
210  
180  
150  
120  
90  
VGS = 10V  
V
= 10V  
9V  
GS  
9V  
8V  
7V  
6V  
8V  
7V  
60  
5V  
6V  
30  
0
0
1
2
3
4
5
6
VD S - Volts  
7
8
9
10  
0
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
VD S - Volts  
Fig. 3. Output Characteristics  
@ 150ºC  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
150  
120  
90  
60  
30  
0
2.8  
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 10V  
9V  
8V  
7V  
6V  
ID = 150A  
1.8  
1.6  
1.4  
1.2  
1
ID = 75A  
5V  
0.8  
0.6  
1
2
VD S - Volts  
3
4
5
-50 -25  
0
25  
TJ - Degrees Centigrade  
50  
75 100 125 150 175  
Fig. 5. RDS(on) Normalized to 0.5 ID25  
Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Temperature  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
º
TJ = 175 C  
External Lead Current Limit  
VGS = 10V  
V
GS  
= 15V  
º
TJ = 25 C  
0.7  
-50 -25  
0
25  
50  
TC - Degrees Centigrade  
75 100 125 150 175  
50  
100  
150 200  
I D - Amperes  
250  
300  
350  
© 2005 IXYS All rights reserved  
IXFH 150N15P  
IXFK 150N15P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
250  
225  
200  
175  
150  
125  
100  
75  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
º
TJ = -40 C  
25ºC  
150ºC  
º
TJ = 150 C  
25ºC  
-40ºC  
50  
25  
0
4
4.5  
5
5.5  
6
6.5  
VG S - Volts  
7
7.5  
8
8.5  
0
25 50 75 100 125 150 175 200 225 250  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
350  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 75V  
I
I
D = 75A  
G = 10mA  
º
TJ = 150 C  
º
TJ = 25 C  
0
0.4  
0.6  
0.8 1  
VS D - Volts  
1.2  
1.4  
1.6  
0
20 40 60 80 100 120 140 160 180 200  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1000  
100  
10  
º
TJ = 175 C  
f = 1MHz  
RDS(on) Limit  
º
C = 25 C  
T
25µs  
C
iss  
oss  
rss  
100µs  
C
C
1ms  
10ms  
DC  
10  
100  
VD S - Volts  
1000  
0
5
10  
15  
20  
VDS - Volts  
25  
30  
35  
40  
IXFH 150N15P  
IXFK 150N15P  
Fig . 1 3 . M a xim u m T r a n s ie n t T h e r m a l Re s is ta n c e  
1 . 0 0  
0 . 1 0  
0 . 0 1  
1
1 0  
1 0 0  
1 0 0 0  
Pu ls e W id th - millis e c o nd s  
© 2005 IXYS All rights reserved  

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