IXFK150N30X3 [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXFK150N30X3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 局域网 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
X3-Class HiPerFETTM
Power MOSFET
VDSS = 300V
ID25 = 150A
RDS(on) 8.3m
IXFT150N30X3HV
IXFH150N30X3
IXFK150N30X3
TO-268HV (IXFT)
N-Channel Enhancement Mode
Avalanche Rated
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TO-247 (IXFH)
TJ = 25C to 150C
300
300
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
20
30
V
V
G
D
S
D (Tab)
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
150
400
A
A
TO-264 (IXFK)
IA
TC = 25C
TC = 25C
75
2
A
J
EAS
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
20
V/ns
W
890
G
D
S
TJ
-55 ... +150
150
C
C
C
D (Tab)
D = Drain
TJM
Tstg
-55 ... +150
G = Gate
S = Source
Tab = Drain
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
Md
Mounting Torque (TO-247 & TO-264)
1.13 / 10
Nm/lb.in
Weight
TO-268HV
TO-247
TO-264
4
6
10
g
g
g
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
High Power Density
Easy to Mount
Space Savings
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
300
V
V
2.5
4.5
100 nA
Applications
IDSS
25 A
1 mA
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
6.6
8.3 m
DS100863A(11/17)
© 2017 IXYS CORPORATION, All Rights Reserved
IXFT150N30X3HV IXFH150N30X3
IXFK150N30X3
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 60A, Note 1
Gate Input Resistance
70
120
S
RGi
1.2
Ciss
Coss
Crss
13.1
2.0
nF
nF
pF
VGS = 0V, VDS = 25V, f = 1MHz
1.7
Effective Output Capacitance
Co(er)
Co(tr)
700
pF
pF
Energy related
Time related
VGS = 0V
DS = 0.8 • VDSS
2700
V
td(on)
tr
td(off)
tf
40
32
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
187
14
RG = 5 (External)
Qg(on)
Qgs
254
60
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
56
RthJC
RthCS
0.14 C/W
TO-247
TO-264
0.21
0.15
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
150
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
600
1.4
V
trr
QRM
IRM
167
1100
13
ns
IF = 75A, -di/dt = 100A/μs
nC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFT150N30X3HV IXFH150N30X3
IXFK150N30X3
Fig. 1. Output Characteristics @ TJ = 25oC
Fig. 2. Extended Output Characteristics @ TJ = 25oC
160
140
120
100
80
700
600
500
400
300
200
100
0
V
= 10V
GS
V
= 10V
9V
GS
8V
7V
9V
8V
6V
5V
60
7V
40
6V
5V
20
0
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
25
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 75A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
160
140
120
100
80
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
8V
GS
V
= 10V
GS
7V
6V
I
= 150A
D
I
= 75A
D
60
5V
4V
40
20
0
-50
-25
0
25
50
75
100
125
150
0.5
1
1.5
2
2.5
3
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 75A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
= 10V
GS
o
T = 125 C
J
BV
DSS
o
T = 25 C
J
V
GS(th)
100
-60
-40
-20
0
20
40
60
80
120
140
160
100
200
300
400
500
600
700
TJ - Degrees Centigrade
ID - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved
IXFT150N30X3HV IXFH150N30X3
IXFK150N30X3
Fig. 7. Maximum Drain Current vs. Case Temperature
Fig. 8. Input Admittance
160
140
120
100
80
240
200
160
120
80
V
= 10V
DS
60
o
T
J
= 125 C
o
40
25 C
o
40
- 40 C
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
-50
-25
0
25
50
75
100
125
150
240
280
TC - Degrees Centigrade
VGS - Volts
Fig. 10. Forward Voltage Drop of Intrinsic Diode
Fig. 9. Transconductance
280
240
200
160
120
80
500
400
300
200
100
0
V
= 10V
DS
o
T = - 40 C
J
o
25 C
o
125 C
o
T = 125 C
J
o
T = 25 C
J
40
0
0
40
80
120
160
200
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD - Volts
ID - Amperes
Fig. 12. Capacitance
Fig. 11. Gate Charge
100,000
10,000
1,000
100
10
9
8
7
6
5
4
3
2
1
0
V
= 150V
DS
C
I
I
= 75A
D
G
iss
= 10mA
C
C
oss
rss
10
= 1 MHz
f
1
0
40
80
120
160
200
240
1
10
100
1,000
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
VDS - Volts
IXFT150N30X3HV IXFH150N30X3
IXFK150N30X3
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
30
25
20
15
10
5
1000
100
10
R
Limit
)
DS(
on
25μs
100μs
1ms
1
o
T = 150 C
J
o
10ms
T
= 25 C
C
Single Pulse
DC
0.1
0
1
10
100
1,000
0
50
100
150
200
250
300
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
aaaa
0.3
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_150N30X3 (28-S301) 11-02-17
IXFT150N30X3HV IXFH150N30X3
IXFK150N30X3
TO-268HV Outline
PINS:
1 - Gate 2 - Source
3 - Drain
TO-264 Outline
TO-247 Outline
D
A
A
0P
+
B
O 0K M D B M
E
A2
A2
Q
S
D2
+
+
R
D1
D
0P1
4
1
2
3
ixys option
C
L1
E1
L
A1
b
b2
c
b4
PINS: 1 - Gate
e
+
O
2, 4 - Drain
3 - Source
J
M
C
A M
Terminals:
1
2
3
= Gate
= Drain
= Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
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