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IXFK16N90Q [IXYS]

HiPerFET Power MOSFETs Q-Class; HiPerFET功率MOSFET Q系列
IXFK16N90Q
型号： IXFK16N90Q
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

HiPerFET Power MOSFETs Q-Class
HiPerFET功率MOSFET Q系列
文件： 总2页 (文件大小：75K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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Advanced Technical Information  
HiPerFETTM  
Power MOSFETs  
Q-Class  
IXFH 16N90Q  
IXFK 16N90Q  
IXFT 16N90Q  
VDSS  
ID25  
= 900 V  
16 A  
=
RDS(on) = 0.65 W  
trr £ 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, High dv/dt  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
900  
900  
V
V
(TAB)  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
16  
64  
16  
A
A
A
TO-268 (D3) ( IXFT)  
G
EAR  
EAS  
TC = 25°C  
TC = 25°C  
45  
1.5  
mJ  
J
S
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
5
V/ns  
TO-264AA(IXFK
PD  
TC = 25°C  
360  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
D
S
D (TAB)  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mountingtorque  
300  
°C  
G = Gate  
Md  
TO-247  
TO-264  
1.13/10 Nm/lb.in.  
0.9/6 Nm/lb.in.  
S = Source  
TAB = Drain  
Weight  
Symbol  
TO-247  
TO-268  
TO-264  
6
4
10  
g
g
g
Features  
• IXYS advanced low Qg process  
• Internationalstandardpackages  
• EpoxymeetUL94V-0,flammability  
classification  
• Low RDS (on) low Qg  
• Avalanche energy and current rated  
• Fast intrinsic rectifier  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDSS  
VGS = 0 V, ID = 250 mA  
900  
3.0  
V
V
VGS(th)  
VDS = VGS, ID = 4 mA  
5.0  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
50 mA  
Advantages  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
2
mA  
• Easy to mount  
• Space savings  
• High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
0.65  
W
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98668(11/99)  
1 - 2  
IXFH 16N90Q IXFK 16N90Q  
IXFT 16N90Q  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
TO-247 AD (IXFH) Outline  
min. typ. max.  
VDS = 10 V; ID = 0.5 • ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
10  
17  
S
Ciss  
Coss  
Crss  
4000  
430  
pF  
pF  
pF  
155  
Dim. Millimeter  
Inches  
td(on)  
tr  
td(off)  
tf  
21  
24  
56  
14  
ns  
ns  
ns  
ns  
Min. Max. Min. Max.  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
RG = 2.0 W (External),  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
E
F
4.32 5.49 0.170 0.216  
Qg(on)  
Qgs  
133 170  
nC  
nC  
nC  
5.4  
6.2 0.212 0.244  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
25  
67  
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
Qgd  
J
1.0  
1.4 0.040 0.055  
K
10.8 11.0 0.426 0.433  
RthJC  
RthCK  
0.35 K/W  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
TO-247  
TO-264  
0.25  
0.15  
K/W  
K/W  
N
1.5 2.49 0.087 0.102  
TO-264 AA (IXFK) Outline  
Source-DrainDiode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
min.  
typ. max.  
VGS = 0 V  
16  
A
A
ISM  
Repetitive; pulse width limited by TJM  
60  
VSD  
IF = IS, VGS = 0 V,  
1.5  
V
Dim.  
Millimeter  
Inches  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
.190  
.100  
.079  
.044  
.094  
.114  
.202  
.114  
.083  
.056  
.106  
.122  
trr  
QRM  
IRM  
250  
ns  
mC  
A
1
8
IF = IS -di/dt = 100 A/ms, VR = 100 V  
c
D
E
e
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
TO-268AA (IXFT) (D3 PAK)  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
Q
Q1  
R
3.17  
6.07  
8.38  
3.81  
1.78  
3.66  
6.27  
8.69  
4.32  
2.29  
.125  
.239  
.330  
.150  
.070  
.144  
.247  
.342  
.170  
.090  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
R1  
.75  
.83  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
Min. Recommended Footprint  
13.3  
5.45 BSC  
18.70 19.10  
13.6  
e
H
L
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
L2  
L3  
L4  
1.20  
1.00  
0.25 BSC  
1.40  
1.15  
.047 .055  
.039 .045  
.010 BSC  
3.80  
4.10  
.150 .161  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 2  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  

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