首页 |元器件品牌

IXFK170N25X3 [LITTELFUSE]

Power Field-Effect Transistor,;
IXFK170N25X3
型号： IXFK170N25X3
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
文件： 总7页 (文件大小：304K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Preliminary Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 250V  
ID25 = 170A  
RDS(on) 7.4m  
IXFT170N25X3HV  
IXFH170N25X3  
IXFK170N25X3  
TO-268HV (IXFT)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXFH)  
TJ = 25C to 150C  
250  
250  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
D (Tab)  
ID25  
IL(RMS)  
TC = 25C  
External Lead Current Limit  
170  
160  
A
A
TO-264 (IXFK)  
IDM  
TC = 25C, Pulse Width Limited by TJM  
400  
A
IA  
TC = 25C  
TC = 25C  
85  
A
J
EAS  
2.3  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
G
D
S
890  
D (Tab)  
D = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
G = Gate  
S = Source  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-247 & TO-264)  
1.13 / 10  
Nm/lb.in  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Weight  
TO-268HV  
TO-247  
TO-264  
4
6
10  
g
g
g
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
High Power Density  
Easy to Mount  
Space Savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
250  
V
V
2.5  
4.5  
100 nA  
Applications  
IDSS  
10 A  
1 mA  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
6.1  
7.4 m  
DS100809C(11/17)  
© 2017 IXYS CORPORATION, All Rights Reserved.  
IXFT170N25X3HV IXFH170N25X3  
IXFK170N25X3  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
66  
110  
S
RGi  
1.3  
Ciss  
Coss  
Crss  
13.5  
2.3  
nF  
nF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
1.6  
Effective Output Capacitance  
Co(er)  
Co(tr)  
800  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
DS = 0.8 • VDSS  
3280  
V
td(on)  
tr  
td(off)  
tf  
18  
10  
62  
7
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 5(External)  
Qg(on)  
Qgs  
190  
55  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
45  
RthJC  
RthCS  
0.14 C/W  
TO-247  
TO-264  
0.21  
0.15  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
170  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
680  
1.4  
V
trr  
QRM  
IRM  
140  
770  
11  
ns  
IF = 85A, -di/dt = 100A/μs  
nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFT170N25X3HV IXFH170N25X3  
IXFK170N25X3  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
180  
160  
140  
120  
100  
80  
800  
700  
600  
500  
400  
300  
200  
100  
0
V
= 10V  
8V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
6V  
5V  
4V  
7V  
60  
40  
6V  
5V  
20  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 85A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
180  
160  
140  
120  
100  
80  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 170A  
D
I
= 85A  
D
5V  
4V  
60  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
2.5  
3
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 85A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
V
= 10V  
GS  
BV  
DSS  
o
T
= 125 C  
J
o
V
GS(th)  
T
= 25 C  
J
BV  
DSS  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
100  
200  
300  
400  
500  
600  
700  
800  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved.  
IXFT170N25X3HV IXFH170N25X3  
IXFK170N25X3  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
180  
160  
140  
120  
100  
80  
250  
200  
150  
100  
50  
External Lead Current Limit  
o
T
J
= 125 C  
60  
o
25 C  
o
- 40 C  
40  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
240  
200  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
240  
200  
160  
120  
80  
600  
500  
400  
300  
200  
100  
0
o
T = - 40 C  
J
o
25 C  
o
125 C  
o
T = 25 C  
J
o
T = 125 C  
J
40  
0
0
40  
80  
120  
160  
200  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100,000  
10,000  
1,000  
100  
V
I
= 125V  
DS  
= 85A  
C
D
iss  
I
= 10mA  
G
C
oss  
rss  
C
10  
= 1 MHz  
f
1
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
1
10  
100  
1,000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFT170N25X3HV IXFH170N25X3  
IXFK170N25X3  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
1000  
100  
10  
24  
20  
16  
12  
8
R
DS(  
on  
Limit  
)
25μs  
100μs  
1ms  
1
o
T = 150 C  
J
10ms  
100ms  
o
4
T
= 25 C  
C
Single Pulse  
DC  
0
0.1  
0
40  
80  
120  
160  
200  
240  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2017 IXYS CORPORATION, All Rights Reserved.  
IXYS REF: F_170N25X3 (28-S301) 4-24-17  
IXFT170N25X3HV IXFH170N25X3  
IXFK170N25X3  
TO-268HV Outline  
PINS:  
1 - Gate 2 - Source  
3 - Drain  
TO-264 Outline  
TO-247 Outline  
D
A
A
0P  
+
B
O 0K M D B M  
E
A2  
A2  
Q
S
D2  
+
+
R
D1  
D
0P1  
4
1
2
3
ixys option  
C
L1  
E1  
L
A1  
b
b2  
c
b4  
PINS: 1 - Gate  
e
+
O
2, 4 - Drain  
3 - Source  
J
M
C
A M  
Terminals:  
1
2
3
= Gate  
= Drain  
= Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

相关型号：

IXFK180N07

 HiPerFET Power MOSFETs
IXYS

IXFK180N085

 HiPerFET Power MOSFETs
IXYS

IXFK180N10

 Single MOSFET Die
IXYS

IXFK180N10_09

 HiperFET Power MOSFETs
IXYS

IXFK180N15P

 Polar HiPerFET Power MOSFET
IXYS

IXFK180N25T

 GigaMOS Power MOSFET
IXYS

IXFK185N10

 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 185A I(D) | TO-264AA
ETC

IXFK200N10P

 Polar HiPerFET Power MOSFET
IXYS

IXFK20N120

 HiPerFET Power MOSFETs
IXYS

IXFK20N120P

 Polar Power MOSFET HiPerFET
IXYS

IXFK20N80Q

 HiPerFETTM Power MOSFETs Q-Class
IXYS

IXFK210N17T

 GigaMOS Power MOSFET
IXYS
©2020 ICPDF网 联系我们和版权申明