IXFK170N10 [IXYS]
HiPerFET Power MOSFET; HiPerFET功率MOSFET
| 型号： | IXFK170N10 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFET |
| 文件： | 总4页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFET
VDSS
ID25
RDS(on)
trr
IXFN170N10
IXFK170N10
100V 170A 10mW
100V 170A 10mW
200ns
200ns
Single MOSFET Die
TO-264 AA (IXFK)
Preliminary data
Symbol
TestConditions
MaximumRatings
IXFK
IXFN
170N10
170N10
G
D (TAB)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C
100
100
100
100
V
V
D
S
VGS
Continuous
Transient
±20
±30
±20
±30
V
V
VGSM
ID25
miniBLOC, SOT-227 B (IXFN)
E153432
TC = 25°C
TC = 125°C
TC = 25°C
TC = 25°C
170
76
680
170
170
NA
680
170
A
S
ID125
G
IDM
A
A
IAR
EAR
TC = 25°C
60
5
60
5
mJ
S
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
V/ns
D
PD
TC = 25°C
560
600 W
°C
G = Gate
S = Source
D = Drain
TAB = Drain
TJ
TJM
Tstg
-55 ... +150°C
150
-55 ... +150°C
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
TL
1.6 mm (0.063 in) from case for 10 s
300
N/A
°C
Features
· Internationalstandardpackages
· Encapsulating epoxy meets
UL94V-0,flammabilityclassification
· miniBLOC withAluminiumnitride
isolation
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t = 1 s
N/A
N/A
2500
3000
V~
V~
Md
Mountingtorque
Terminalconnectiontorque
0.9/6
N/A
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
Weight
10
30
g
· Low package inductance
· Fast intrinsic Rectifier
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Min.
100
Typ.
0.077
-0.183
Max.
Applications
VDSS
VGS= 0 V, ID = 3mA
V
· DC-DC converters
· Synchronousrectification
· Battery chargers
· Switched-modeandresonant-mode
powersupplies
VDSS temperature coefficient
%/K
VGS(th)
VDS = VGS, ID = 8mA
2
4
V
VGS(th) temperature coefficient
%/K
· DC choppers
· Temperatureandlightingcontrols
· Low voltage relays
IGSS
IDSS
VGS= ±20V, VGS = 0V
±200
nA
VDS= 0.8 • VDSS
VGS= 0 V
V
TJ = 25°C
TJ = 125°C
400
2
mA
mA
Advantages
RDS(on)
VGS= 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
10
mW
· Easy to mount
· Space savings
· High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97505D(7/00)
1 - 4
IXFK170N10
IXFN170N10
Symbol
TestConditions
Characteristic Values
Min. Typ. Max.
TO-264 AA Outline
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
65
S
Ciss
Coss
Crss
10,300
2,200
1,200
pF
pF
pF
td(on)
tr
td(off)
tf
40
90
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
158
79
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
Qg(on)
Qgs
515
62
nC
nC
nC
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
Qgd
276
c
D
0.53
25.91 26.16
0.83
.021
1.020
.780
.033
1.030
.786
RthJC
RthCK
TO-264 AA
TO-264 AA
0.22
0.15
K/W
K/W
E
e
19.81 19.96
5.46 BSC
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
RthJC
RthCK
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
0.21
0.05
K/W
K/W
L
L1
P
20.32 20.83
.800
.090
.125
.820
.102
.144
2.29
2.59
3.17
3.66
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Source-DrainDiode
(TJ = 25°C, unless otherwise specified)
CharacteristicValues
Min. Typ. Max.
Symbol
TestConditions
miniBLOC, SOT-227 B
IS
VGS = 0
170
680
A
ISM
Repetitive;
A
pulse width limited by TJM
VSD
IF = 100 A, VGS = 0 V,
1.5
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
QRM
IRM
175
1.1
12.6
ns
mC
A
IF = 50 A, -di/dt = 100 A/ms, VR = 100 V
M4 screws (4x) supplied
Dim.
Millimeter
Min. Max.
31.50 31.88 1.240 1.255
Inches
Min.
Notes:
1.RGS = 1 MW
2.Pulse width limited by TJM.
3.Chipcapability
4.Current limited by external leads
Max.
A
B
7.80
8.20 0.307 0.323
C
D
4.09
4.09
4.29 0.161 0.169
4.29 0.161 0.169
E
F
4.09
4.29 0.161 0.169
14.91 15.11 0.587 0.595
G
H
30.12 30.30 1.186 1.193
38.00 38.23 1.496 1.505
J
11.68 12.22 0.460 0.481
K
8.92
9.60 0.351 0.378
L
0.76
0.84 0.030 0.033
M
12.60 12.85 0.496 0.506
25.15 25.42 0.990 1.001
N
O
1.98
2.13 0.078 0.084
P
4.95
5.97 0.195 0.235
Q
26.54 26.90 1.045 1.059
R
S
3.94
4.72
4.42 0.155 0.174
4.85 0.186 0.191
T
U
24.59 25.07 0.968 0.987
-0.05 0.1 -0.002 0.004
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFK170N10
IXFN170N10
Figure 1. Output Characteristics at 25OC
Figure 2. Output Characteristics at 125OC
300
300
250
200
150
100
50
VGS=10V
9V
TJ=25OC
TJ=125OC
V
GS=10V
8V
250
200
150
100
50
9V
8V
7V
7V
6V
5V
6V
5V
0
0
0
2
4
6
8
10
0
2
4
6
8
10
VDS - Volts
VDS - Volts
Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID
Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2.2
TJ = 125OC
VGS = 10V
VGS=10V
2.0
1.8
ID=170A
TJ = 25OC
1.6
ID=85A
1.4
1.2
1.0
0
50
100
ID - Amperes
Figure 5. Drain Current vs. Case Temperature
150
200
250
300
25
50
75
100
125
150
TJ - Degrees C
Figure 6. Admittance Curves
200
175
150
125
100
75
100
80
60
40
20
0
TJ = 125oC
TJ = 25oC
50
25
0
-50 -25
0
25 50 75 100 125 150
0
2
4
6
8
10
TC - Degrees C
VGS - Volts
© 2000 IXYS All rights reserved
3 - 4
IXFK170N10
IXFN170N10
Figure 7. Gate Charge
Figure 8. Capacitance Curves
12
10
8
18000
15000
12000
9000
6000
3000
0
Vds= 50V
ID= 85A
IG=10mA
f = 1MHz
Ciss
6
4
Coss
Crss
2
0
0
100
200
300
400
500
600
0
10
20
VDS - Volts
30
40
Gate Charge - nC
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure10. Forward Bias Safe Operating Area
300
250
200
150
100
50
170
1 00
1 ms
10
TJ = 125OC
ms
1 0
100
ms
TC = 25OC
TJ = 25O
C
DC
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
1 0
1 00
VSD - Volts
VDS - Volts
Figure 11. Transient Thermal Resistance
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10-3
10-2
10-1
Pulse Width - Seconds
100
101
© 2000 IXYS All rights reserved
4 - 4
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