IXFK170N10P [IXYS]
Polar HiperFET Power MOSFET; 极地HiPerFET功率MOSFET
| 型号： | IXFK170N10P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar HiperFET Power MOSFET |
| 文件： | 总5页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarTM HiperFETTM
Power MOSFET
VDSS = 100V
ID25 = 170A
RDS(on) ≤ 9mΩ
≤ 150ns
IXFH170N10P
IXFK170N10P
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-247 (IXFH)
Symbol
VDSS
Test Conditions
Maximum Ratings
G
D
S
Tab
TJ = 25°C to 175°C
100
100
V
V
V
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
± 20
± 30
TO-264 (IXFK)
ID25
IL(RMS)
TC = 25°C
External Lead Current Limit
170
160
A
A
IDM
TC = 25°C, Pulse Width Limited by TJM
350
A
G
IA
TC = 25°C
TC = 25°C
60
2
A
J
Tab
D
S
EAS
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
10
V/ns
W
G = Gate
S = Source
D
= Drain
TC = 25°C
715
Tab = Drain
TJ
-55 to +175
+175
°C
°C
°C
TJM
Tstg
-55 to +175
Features
TL
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z International Standard Packages
z Fast Intrinsic Rectifier
z Avalanche Rated
TSOLD
Md
Mounting Torque
1.13/10
Nm/lb.in.
z Low RDS(ON) and QG
Weight
TO-247
TO-264
6
10
g
g
z Low Package Inductance
Advantages
Symbol
Test Conditions
Characteristic Values
z High Power Density
z Easy to Mount
(TJ = 25°C, Unless Otherwise Specified)
Min.
100
2.5
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 4mA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z Space Savings
5.0
±100 nA
Applications
IDSS
25 μA
z Switch-Mode and Resonant-Mode
Power Supplies
TJ = 150°C
500 μA
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
VGS = 15V, ID = 350A
9 mΩ
mΩ
z DC-DC Converters
7
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
DS99380F(01/10)
© 2010 IXYS CORPORATION, All Rights Reserved
IXFH170N10P
IXFK170N10P
Symbol
Test Conditions
Characteristic Values
TO-247 (IXFH) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
50
72
S
Ciss
Coss
Crss
6000
2340
730
pF
pF
pF
∅ P
1
2
3
td(on)
tr
td(off)
tf
35
50
90
33
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 60A
RG = 3.3Ω (External)
e
Terminals: 1 - Gate
2 - Drain
Tab - Drain
Qg(on)
Qgs
198
39
nC
nC
nC
3 - Source
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Qgd
107
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
RthJC
RthCS
0.21 °C/W
(TO-247)
(TO-264)
0.21
0.15
°C/W
°C/W
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-Drain Diode
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
Symbol
Test Conditions
Characteristic Values
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
170
350
1.5
IS
VGS = 0V
A
A
V
TO-264 AA ( IXFK) Outline
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
trr
IRM
QRM
150 ns
IF = 25A, -di/dt = 100A/μs,
VR = 50V, VGS = 0V
8.0
0.6
A
μC
1
2
3
=
=
=
Gate
Drain
Source
Back Side
Tab = Drain
Dim.
Millimeter
Inches
Min. Max.
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
E
e
0.53
25.91 26.16
19.81 19.96
5.46 BSC
0.83
.021
1.020
.780
.033
1.030
.786
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXFH170N10P
IXFK170N10P
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
320
280
240
200
160
120
80
180
160
140
120
100
80
VGS = 10V
VGS = 10V
9V
9V
8V
7V
8V
7V
60
40
6V
5V
6V
5V
40
20
0
0
0.0
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
3.2
350
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
175
175
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 85A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
180
160
140
120
100
80
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10V
VGS = 10V
9V
8V
I D = 170A
I D = 85A
7V
6V
60
40
20
5V
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 85A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
180
160
140
120
100
80
3.0
2.6
2.2
1.8
1.4
1.0
0.6
VGS = 10V
15V
- - - - -
External Lead Current Limit
TJ = 175ºC
60
40
TJ = 25ºC
20
0
50
100
150
200
250
300
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXFH170N10P
IXFK170N10P
Fig. 8. Transconductance
Fig. 7. Input Admittance
320
280
240
200
160
120
80
120
100
80
60
40
20
0
TJ = - 40ºC
TJ = - 40ºC
25ºC
150ºC
25ºC
150ºC
40
0
0
40
80
120
160
ID - Amperes
200
240
280
320
3
4
5
6
7
8
9
10
1.6
40
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
VDS = 50V
I D = 85A
I G = 10mA
TJ = 25ºC
TJ = 150ºC
0
0
20
40
60
80
100
120
140
160
180
200
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
10,000
1,000
100
1,000
100
10
= 1 MHz
f
1ms
100µs
RDS(on) Limit
10ms
DC
C
iss
C
oss
TJ = 175ºC
C
rss
TC = 25ºC
Single Pulse
1
0
5
10
15
20
25
30
35
1
10
VDS - Volts
100
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH170N10P
IXFK170N10P
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_170N10P(8S)01-07-10-C
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