IXFK150N30P3 [LITTELFUSE]

Power Field-Effect Transistor,;


型号：	IXFK150N30P3
厂家：	LITTELFUSE
描述：	Power Field-Effect Transistor,
文件：	总6页 (文件大小：133K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Technical Information

Polar3^TMHiPerFET^TM

Power MOSFET

V_DSS= 300V

I_D25= 150A

R_DS(on) 19m

IXFK150N30P3

IXFX150N30P3

t_rr

 250ns

N-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXFK)

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

300

Tab

V_GSS

V_GSM

Continuous

Transient

 20

 30

PLUS247 (IXFX)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

150

375

I_A

E_AS

T_C= 25C

Tab

P_D

T_C= 25C

1300

G = Gate

S = Source

= Drain

dv/dt

I_S I_DM, V_DD V_DSS, T_J 150°C

V/ns

Tab = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



Dynamic dv/dt Rating

Avalanche Rated

Fast Intrinsic Diode

Low Q_G



M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in

N/lb

20..120 /4.5..27



Low R_DS(on)

Weight

TO-264

PLUS247



Low Drain-to-Tab Capacitance

Low Package Inductance

Advantages



Symbol

Test Conditions

Characteristic Values

Easy to Mount

Space Savings



(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS=  20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

300

Applications

3.0

5.0



DC-DC Converters

Battery Chargers

200 nA

25 A



I_DSS

Switch-Mode and Resonant-Mode

T_J= 125C

Power Supplies

Uninterrupted Power Supplies

AC Motor Drives

High Speed Power Switching



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

19 m



Applications

DS100478A(12/13)

IXFK150N30P3

IXFX150N30P3

Symbol

Test Conditions

Characteristic Values

TO-264 AA Outline

(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

V_DS= 10V, I_D= 60A, Note 1

V_GS= 0V, V_DS= 25V, f = 1MHz

Gate Input Resistance

110

C_iss

C_oss

C_rss

12.1

1910

R_Gi

1.0



Terminals: 1 - Gate

2 - Drain

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 1 (External)

3 - Source

4 - Drain

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

4.82

2.54

2.00

5.13

2.89

2.10

.190

.100

.079

.202

.114

.083

Q_g(on)

Q_gs

197

1.12

2.39

2.90

1.42

2.69

3.09

.044

.094

.114

.056

.106

.122

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

0.53

0.83

.021

1.020

.780

.033

1.030

.786

Q_gd

25.91 26.16

19.81 19.96

5.46 BSC

R_thJC

R_thCS

0.096C/W

0.15C/W

.215 BSC

0.00

0.25

.000

.010

20.32 20.83

.800

.090

.820

.102

2.29

2.59

3.17

3.66

.125

.144

6.07

8.38

6.27

8.69

.239

.330

.247

.342

3.81

1.78

4.32

2.29

.150

.070

.170

.090

Source-Drain Diode

6.04

1.57

6.30

1.83

.238

.062

.248

.072

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

150

600

1.5

PLUS247^TMOutline

I_S

V_GS= 0V

I_SM

V_SD

Repetitive, Pulse Width Limited by T_JM

I_F= 100A , V_GS= 0V, Note 1

t_rr

250

μC

I_F= 75A, -di/dt = 100A/s

Q_RM

I_RM

2.9



V_R= 100V, V_GS= 0V

23.0

Note 1. Pulse test, t  300s, duty cycle, d 2%.

Terminals: 1 - Gate

2 - Drain

3 - Source

Dim.

Millimeter

Min. Max.

Inches

Min. Max.

A₁

A₂

4.83

2.29

1.91

5.21

2.54

2.16

.190 .205

.090 .100

.075 .085

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

b₁

b₂

1.14

1.91

2.92

1.40

2.13

3.12

.045 .055

.075 .084

.115 .123

0.61

20.80 21.34

15.75 16.13

0.80

.024 .031

.819 .840

.620 .635

5.45 BSC

.215 BSC

19.81 20.32

.780 .800

.150 .170

3.81

4.32

5.59

4.32

6.20

4.83

.220 0.244

.170 .190

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

IXFK150N30P3

IXFX150N30P3

Fig. 1. Output Characteristics @ T_J= 25ºC

Fig. 2. Extended Output Characteristics @ T_J= 25ºC

300

250

200

150

100

= 10V

140

120

100

0.5

1.5

2.5

V_DS- Volts

Fig. 4. R_DS(on)Normalized to I_D= 75A Value vs.

Junction Temperature

Fig. 3. Output Characteristics @ T_J= 125ºC

3.0

2.6

2.2

1.8

1.4

1.0

0.6

0.2

= 10V

140

120

100

= 10V

= 150A

= 75A

-50

-25

100

125

150

V_DS- Volts

T_J- Degrees Centigrade

Fig. 6. Maximum Drain Current vs.

Case Temperature

Fig. 5. R_DS(on)Normalized to I_D= 75A Value vs.

Drain Current

160

140

120

100

3.2

2.8

2.4

2.0

1.6

1.2

0.8

= 10V

T = 125ºC

T = 25ºC

-50

-25

100

125

150

100

150

200

250

300

I_D- Amperes

T_C- Degrees Centigrade

IXFK150N30P3

IXFX150N30P3

Fig. 7. Input Admittance

Fig. 8. Transconductance

200

180

160

140

120

100

180

160

140

120

100

= - 40ºC

= 125ºC

25ºC

- 40ºC

25ºC

125ºC

100

120

140

160

180

200

220

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

8.5

V_GS- Volts

I_D- Amperes

Fig. 10. Gate Charge

Fig. 9. Forward Voltage Drop of Intrinsic Diode

300

250

200

150

100

= 150V

= 75A

= 10mA

= 125ºC

= 25ºC

1.0

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.1

1.2

1.3

100

120

140

160

180

200

V_SD- Volts

Q_G- NanoCoulombs

Fig. 11. Capacitance

Fig. 12. Forward-Bias Safe Operating Area

100,000

10,000

1,000

100

1000

100

= 1 MHz

Limit

DS(on)

iss

25µs

100µs

oss

rss

= 150ºC

1ms

= 25ºC

Single Pulse

100

1,000

V_DS- Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFK150N30P3

IXFX150N30P3

Fig. 13. Maximum Transient Thermal Impedance

AAAAA

0.2

0.1

0.01

0.001

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

IXYS REF: F_150N30P3(W9) 6-18-12

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXFK150N30P3 [LITTELFUSE]

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