IXFK150N30P3 [IXYS]
Power Field-Effect Transistor,;型号: | IXFK150N30P3 |
厂家: | IXYS CORPORATION |
描述: | Power Field-Effect Transistor, |
文件: | 总5页 (文件大小:133K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Technical Information
Polar3TM HiPerFETTM
Power MOSFET
VDSS = 300V
ID25 = 150A
RDS(on) 19m
IXFK150N30P3
IXFX150N30P3
trr
250ns
N-Channel Enhancement Mode
Avalanche Rated
TO-264 (IXFK)
Fast Intrinsic Diode
G
D
S
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
300
300
V
V
Tab
VGSS
VGSM
Continuous
Transient
20
30
V
V
PLUS247 (IXFX)
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
150
375
A
A
IA
EAS
TC = 25C
TC = 25C
75
4
A
J
G
D
S
Tab
PD
TC = 25C
1300
35
W
G = Gate
S = Source
D
= Drain
dv/dt
IS IDM, VDD VDSS, TJ 150°C
V/ns
Tab = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
C
C
C
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Dynamic dv/dt Rating
Avalanche Rated
Fast Intrinsic Diode
Low QG
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in
N/lb
20..120 /4.5..27
Low RDS(on)
Weight
TO-264
PLUS247
10
6
g
g
Low Drain-to-Tab Capacitance
Low Package Inductance
Advantages
Symbol
Test Conditions
Characteristic Values
Easy to Mount
Space Savings
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
300
V
V
Applications
3.0
5.0
DC-DC Converters
Battery Chargers
200 nA
25 A
IDSS
Switch-Mode and Resonant-Mode
TJ = 125C
1
mA
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
19 m
Applications
© 2013 IXYS CORPORATION, All Rights Reserved
DS100478A(12/13)
IXFK150N30P3
IXFX150N30P3
Symbol
Test Conditions
Characteristic Values
TO-264 AA Outline
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
65
110
S
Ciss
Coss
Crss
12.1
1910
40
nF
pF
pF
RGi
1.0
: 1 - Gate
2 - Drain
td(on)
tr
td(off)
tf
44
30
74
12
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
3 - Source
4 - Drain
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
Qg(on)
Qgs
197
70
nC
nC
nC
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
0.53
0.83
.021
1.020
.780
.033
1.030
.786
Qgd
65
25.91 26.16
19.81 19.96
5.46 BSC
RthJC
RthCS
0.096C/W
0.15C/W
.215 BSC
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
Source-Drain Diode
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
150
600
1.5
PLUS247TM Outline
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 100A , VGS = 0V, Note 1
trr
250
ns
μC
A
IF = 75A, -di/dt = 100A/s
QRM
IRM
2.9
VR = 100V, VGS = 0V
23.0
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFK150N30P3
IXFX150N30P3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300
250
200
150
100
50
V
= 10V
9V
GS
V
= 10V
9V
140
120
100
80
GS
8V
7V
8V
60
7V
6V
40
20
6V
0
0
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 75A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
8V
GS
140
120
100
80
V
= 10V
GS
I
= 150A
D
7V
I
= 75A
D
60
6V
5V
40
20
0
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
Fig. 5. RDS(on) Normalized to ID = 75A Value vs.
Drain Current
160
140
120
100
80
3.2
2.8
2.4
2.0
1.6
1.2
0.8
V
= 10V
GS
T = 125ºC
J
60
T = 25ºC
J
40
20
0
-50
-25
0
25
50
75
100
125
150
0
50
100
150
200
250
300
ID - Amperes
TC - Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved
IXFK150N30P3
IXFX150N30P3
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
180
160
140
120
100
80
180
160
140
120
100
80
T
J
= - 40ºC
T
J
= 125ºC
25ºC
- 40ºC
25ºC
125ºC
60
60
40
40
20
20
0
0
0
20
40
60
80
100
120
140
160
180
200
220
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
VGS - Volts
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
10
9
8
7
6
5
4
3
2
1
0
300
250
200
150
100
50
V
= 150V
DS
I
I
= 75A
D
G
= 10mA
T
J
= 125ºC
T
= 25ºC
1.0
J
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
1.2
1.3
0
20
40
60
80
100
120
140
160
180
200
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
10,000
1,000
100
1000
100
10
= 1 MHz
R
Limit
f
DS(on)
C
iss
25µs
100µs
C
C
oss
rss
T
J
= 150ºC
1ms
T
C
= 25ºC
Single Pulse
10
1
0
5
10
15
20
25
30
35
40
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK150N30P3
IXFX150N30P3
Fig. 13. Maximum Transient Thermal Impedance
AAAAA
0.2
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_150N30P3(W9) 6-18-12
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