IXFK140N30P [IXYS]
Polar Power MOSFET HiPerFET; Polar功率MOSFET HiperFET
| 型号： | IXFK140N30P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar Power MOSFET HiPerFET |
| 文件： | 总5页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarTM Power MOSFET
HiPerFETTM
IXFK140N30P
IXFX140N30P
VDSS = 300V
ID25 = 140A
RDS(on) ≤ 24mΩ
trr
≤ 200ns
N-Channel Enhancement Mode
Avalanche Rated
TO-264 (IXFK)
Fast Intrisic Diode
Symbol
VDSS
Test Conditions
Maximum Ratings
G
D
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
300
300
V
V
(TAB)
S
VDGR
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
PLUS247 (IXFX)
ID25
ILRMS
IDM
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
140
75
A
A
A
300
(TAB)
IA
TC = 25°C
TC = 25°C
70
5
A
J
G = Gate
S = Source
D
= Drain
EAS
TAB = Drain
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
20
V/ns
W
1040
Features
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
• Fast intrinsic diode
• Avalanche Rated
• Low RDS(ON) and QG
• Low package inductance
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
260
°C
°C
Advantages
Md
Mounting force
Mounting torque
(PLUS247)
(TO-264)
20..120/4.5..27
N/lb.
Nm/lb.in.
1.13/10
z
Easy to mount
Space savings
Weight
PLUS247
TO-264
6
10
g
g
z
z
High power density
Applications
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20V, VDS = 0V
300
3.0
V
• DC choppers
• AC and DC motor control
• Uninterrupted power supplies
• High speed power switching
applications
5.0
V
±200 nA
IDSS
VDS = VDSS
VGS = 0V
25 μA
1 mA
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
20
24 mΩ
DS99557F(5/08)
© 2008 IXYS CORPORATION, All rights reserved
IXFK140N30P
IXFX140N30P
Symbol
Test Conditions
Characteristic Values
TO-264 (IXFK) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ. Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
50
90
S
Ciss
Coss
Crss
14.8
1830
55
nF
pF
pF
td(on)
tr
td(off)
tf
30
30
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
100
20
Qg(on)
Qgs
185
72
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
60
RthJC
RthCS
0.12 °C/W
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
140
560
1.3
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = 70A, VGS = 0V, Note 1
PLUS 247TM (IXFX) Outline
trr
QRM
IRM
200 nS
IF = 25A, -di/dt = 100A/μs
0.6
6.0
μC
A
VR = 100V, VGS = 0V
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXFK140N30P
IXFX140N30P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
140
120
100
80
280
240
200
160
120
80
VGS = 10V
8V
VGS = 10V
8V
7V
6V
7V
6V
60
40
20
40
5V
5V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8
10
12
14
16
18
20
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 70A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
140
120
100
80
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
VGS = 10V
VGS = 10V
8V
7V
I D = 140A
6V
5V
I D = 70A
60
40
20
0
0
1
2
3
4
5
6
7
8
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 70A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
90
80
70
60
50
40
30
20
10
0
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
External Lead Current Limit
VGS = 10V
TJ = 125ºC
TJ = 25ºC
0
40
80
120
160
200
240
280
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXFK140N30P
IXFX140N30P
Fig. 8. Transconductance
Fig. 7. Input Admittance
180
160
140
120
100
80
140
120
100
80
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
60
60
40
40
20
20
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
1.4
40
0
20
40
60
80
100 120 140 160 180 200
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
300
250
200
150
100
50
VDS = 150V
I D = 70A
I G = 10mA
TJ = 125ºC
TJ = 25ºC
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
20
40
60
80
100 120 140 160 180 200
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100,000
10,000
1,000
100
1,000
100
10
TJ = 150ºC
TC = 25ºC
C
iss
Single Pulse
RDS(on) Limit
25µs
C
oss
100µs
1ms
10ms
C
= 1 MHz
5
f
rss
DC
10
0
10
15
20
25
30
35
10
100
1000
VDS - Volts
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK140N30P
IXFX140N30P
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: F_140N30P(93)5-13-08-B
相关型号：
IXFK14N100Q
Power Field-Effect Transistor, 14A I(D), 1000V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3
IXYS
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