IXFK140N25T [IXYS]
GigaMOS Power MOSFET; GigaMOS功率MOSFET
| 型号： | IXFK140N25T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GigaMOS Power MOSFET |
| 文件： | 总5页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
GigaMOSTM
Power MOSFET
VDSS = 250V
ID25 = 140A
RDS(on) ≤ 17mΩ
IXFK140N25T
IXFX140N25T
trr
≤ 200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
250
250
V
V
G
D
S
(TAB)
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
PLUS247 (IXFX)
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
140
380
A
A
IA
EAS
TC = 25°C
TC = 25°C
40
3
A
J
PD
TC = 25°C
960
20
W
(TAB)
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
V/ns
G = Gate
S = Source
D
= Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TAB = Drain
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Features
z International Standard Packages
z High Current Handling Capability
z Fast Intrinsic Diode
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in.
N/lb.
20..120 /4.5..27
Weight
TO-264
PLUS247
10
6
g
g
z Avalanche Rated
z
Low RDS(on)
Advantages
z
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 4mA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS= 0V
250
V
V
Applications
2.5
5.0
z DC-DC Converters
z Battery Chargers
± 200 nA
50 µA
z Switched-Mode and Resonant-Mode
Power Supplies
IDSS
TJ = 125°C
3
mA
z DC Choppers
z AC Motor Drives
RDS(on)
VGS = 10V, ID = 60A, Note 1
17 mΩ
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
DS100135(03/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK140N25T
IXFX140N25T
Symbol
Test Conditions
Characteristic Values
TO-264 (IXFK) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
80
135
S
Ciss
Coss
Crss
19
1500
185
nF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
33
29
92
22
ns
ns
ns
ns
Resistive Switching Times
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Millimeter
Inches
Dim.
Min.
Max.
Min.
Max.
Qg(on)
Qgs
255
90
nC
nC
nC
A
A1
A2
b
b1
b2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
62
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
RthJC
RthCS
0.13 °C/W
°C/W
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
D
E
e
25.91 26.16
19.81 19.96
5.46 BSC
0.15
.215 BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
Source-Drain Diode
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
140
560
1.3
PLUS 247TM (IXFX) Outline
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 60A, VGS = 0V, Note 1
trr
200
ns
µC
A
IF = 70A, -di/dt = 100A/µs
VR = 75V, VGS = 0V
QRM
IRM
0.60
9.30
Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
ADVANCE TECHNICAL INFORMATION
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFK140N25T
IXFX140N25T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
320
280
240
200
160
120
80
140
120
100
80
VGS = 10V
8V
VGS = 10V
8V
7V
7V
6V
60
6V
5V
40
20
40
5V
0
0
0
2
4
6
8
10
12
14
16
18
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 70A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
140
120
100
80
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
VGS = 10V
8V
7V
6V
I D = 140A
I D = 70A
60
40
5V
20
0
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 70A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
160
140
120
100
80
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
TJ = 125ºC
60
40
TJ = 25ºC
20
0
0
40
80
120
160
200
240
280
320
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF:F_140N25T(9W)3-25-09
IXFK140N25T
IXFX140N25T
Fig. 7. Input Admittance
Fig. 8. Transconductance
180
160
140
120
100
80
220
200
180
160
140
120
100
80
TJ = - 40ºC
TJ = 125ºC
25ºC
- 40ºC
25ºC
125ºC
60
60
40
40
20
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
0
1
20
40
60
80
100 120 140 160 180 200
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
VDS = 125V
I
I
D = 70A
G = 10mA
TJ = 125ºC
TJ = 25ºC
0
30
60
90
120
150
180
210
240
270
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1,000
100
10
100,000
10,000
1,000
100
= 1 MHz
f
RDS( ) Limit
on
C
iss
25µs
C
C
oss
100µs
1ms
TJ = 150ºC
TC = 25ºC
Single Pulse
rss
1
0
5
10
15
20
25
30
35
40
10
100
1000
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
VDS - Volts
IXFK140N25T
IXFX140N25T
Fig. 13. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.00
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF:F_140N25T(9W)3-25-09
相关型号：
IXFK14N100Q
Power Field-Effect Transistor, 14A I(D), 1000V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3
IXYS
©2020 ICPDF网 联系我们和版权申明