IXFK140N20P [IXYS]
PolarHT HiPerFET Power MOSFET; PolarHT HiPerFET功率MOSFET
| 型号： | IXFK140N20P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHT HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHTTMHiPerFET
Power MOSFET
VDSS = 200 V
ID25 = 140 A
RDS(on) ≤ 18 mΩ
IXFK 140N20P
trr
≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
TO-264 (IXFK)
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
200
200
V
V
VGS
VGSM
Continous
Transient
20
30
V
V
G
S
ID25
TC =25° C
140
75
A
A
A
(TAB)
ID(RMS)
IDM
External lead current limit
TC = 25° C, pulse width limited by TJM
280
G = Gate
D = Drain
S = Source
TAB = Drain
IAR
TC =25° C
60
A
EAR
EAS
TC =25° C
TC =25° C
100
4
mJ
J
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 4 Ω
,
10
V/ns
Features
TC =25° C
830
W
l
International standard package
Unclamped Inductive Switching (UIS)
rated
l
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
l
Low package inductance
- easy to drive and to protect
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
Advantages
Md
Mounting torque
1.13/10 Nm/lb.in.
10
Characteristic Values
l
Easy to mount
Space savings
Weight
Symbol
g
l
Test Conditions
l
High power density
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = 20 VDC, VDS = 0
200
V
V
2.5
5.0
200
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 140A
18 mΩ
mΩ
14
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
DS99219E(01/06)
© 2006 IXYS All rights reserved
IXFK 140N20P
Symbol
gfs
Test Conditions
Characteristic Values
TO-264 (IXFK) Outline
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
50
84
S
Ciss
Coss
Crss
7500
1800
280
pF
pF
pF
td(on)
tr
td(off)
tf
30
35
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 3.3 Ω (External)
150
90
Qg(on)
Qgs
240
50
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
100
RthJC
RthCS
0.18° C/W
° C/W
0.15
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
140
A
A
V
ISM
280
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
120
3.5
200 ns
QRM
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXFK 140N20P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25ºC
140
120
100
80
300
270
240
210
180
150
120
90
VGS = 10V
V
= 10V
GS
9V
8V
9V
8V
7V
6V
60
7V
6V
40
60
20
30
5V
1.5
0
0
0
0
0
0.5
1
2
2.5
0
1
2
3
4 5
VD S - Volts
6
7
8
9
10
VD S - Volts
Fig. 3. Output Characteristics
@ 150
Fig. 4. RDS(on Normalized to 0.5 ID25
)
º
C
Value vs. Junction Temperature
140
120
100
80
VGS = 10V
3
2.5
2
VGS = 10V
9V
8V
ID = 140A
7V
ID = 70A
60
1.5
1
6V
5V
40
20
0
0.5
1
2
3
VD S - Volts
4
5
6
-50 -25
0
25 75 100 125 150 175
TJ - Degrees Centigrade
50
Fig. 5. RDS(on) Normalized to 0.5 ID25
Value vs. Drain Current
Fig. 6. Drain Current vs. Case
Temperature
4
3.5
3
90
80
70
60
50
40
30
20
10
0
º
TJ = 175 C
External Lead Current Limit
2.5
2
VGS = 10V
V
GS
= 15V
1.5
1
º
TJ = 25 C
0.5
-50 -25
0
25
50 75 100 125 150 175
TC - Degrees Centigrade
50
100
150
I D - Amperes
200
250
300
© 2006 IXYS All rights reserved
IXFK 140N20P
Fig. 8. Transconductance
Fig. 7. Input Admittance
225
200
175
150
125
100
75
120
110
100
90
80
70
60
50
40
30
20
10
0
º
TJ = -40 C
25ºC
150ºC
º
TJ = 150 C
25ºC
-40ºC
50
25
0
4
4.5
5
5.5
VG S - Volts
6
6.5
7
7.5
8
0
40
80
120
I D - Amperes
160
200
240
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
VDS = 100V
ID = 70A
IG = 10mA
º
TJ = 150 C
º
TJ = 25 C
0
0.4
0.6
0.8 1
VS D - Volts
1.2
1.4
0
25 50 75 100 125 150 175 200 225 250
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
100,000
10,000
1,000
100
1000
100
10
º
TJ = 175 C
f = 1MHz
RDS(on) Limit
º
T
C = 25 C
C
iss
25µs
100µs
C
oss
1ms
C
rss
10ms
DC
0
5
10
15
20
VDS - Volts
25
30
35
40
10
100
VD S - Volts
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 140N20P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is ta n ce
1 . 0 0
0 . 1 0
0 . 0 1
0 . 0 0
0 . 1
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - millis ec o n d s
© 2006 IXYS All rights reserved
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