IXFK120N25P [IXYS]
Polar Power MOSFET HiPerFET; Polar功率MOSFET HiperFET
| 型号： | IXFK120N25P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar Power MOSFET HiPerFET |
| 文件： | 总5页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarTM Power MOSFET
HiPerFETTM
VDSS = 250V
ID25 = 120A
RDS(on) ≤ 24mΩ
IXFK120N25P
IXFX120N25P
trr
≤ 200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrisic Diode
TO-264 (IXFK)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
250
250
V
V
VDGR
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
G
D
(TAB)
S
ID25
ILRMS
IDM
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
120
75
A
A
A
PLUS247 (IXFX)
300
IA
EAS
TC = 25°C
TC = 25°C
60
2.5
A
J
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
10
V/ns
W
(TAB)
700
G = Gate
D
= Drain
S = Source
TAB = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Features
z International Standard Packages
z Fast Intrinsic Diode
Md
Mounting Force
Mounting Torque
(PLUS247)
(TO-264)
20..120/4.5..27
N/lb.
Nm/lb.in.
1.13/10
z Avalanche Rated
Weight
PLUS247
TO-264
6
10
g
g
z Low Package Inductance
Advantages
z
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, Unless Otherwise Specified)
Min.
250
2.5
Typ.
Max.
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 4mA
VGS = ±20V, VDS = 0V
VDS = VDSS, VGS= 0V
V
V
Applications
5.0
z Switched-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
±200 nA
IDSS
25 μA
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
TJ = 125°C
250 μA
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
19
24 mΩ
DS99379F(5/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK120N25P
IXFX120N25P
Symbol
Test Conditions
Characteristic Values
TO-264 (IXFK) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ. Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
45
70
S
Ciss
Coss
Crss
8700
1300
240
nF
pF
pF
td(on)
tr
td(off)
tf
30
33
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
130
33
Qg(on)
Qgs
185
50
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
80
RthJC
RthCS
0.18 °C/W
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
120
300
1.5
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 120A, VGS = 0V, Note 1
PLUS 247TM (IXFX) Outline
trr
QRM
IRM
200 nS
IF = 25A, -di/dt = 100A/μs
0.8
8.0
μC
A
VR = 100V, VGS = 0V
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXFK120N25P
IXFX120N25P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
120
110
100
90
80
70
60
50
40
30
20
10
0
VGS = 10V
9V
240
200
160
120
80
VGS = 10V
9V
8V
8V
7V
7V
6V
40
6V
8
0
0.0
0.0
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
2
4
6
10
12
14
16
18
20
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 60A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
120
100
80
60
40
20
0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
9V
VGS = 10V
8V
7V
I D = 120A
I D = 60A
6V
5V
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 60A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
90
VGS = 10V
TJ = 150ºC
15V
- - - -
External Lead Current Limit
80
70
60
50
40
30
20
10
0
TJ = 25ºC
240
30
60
90
120
150
180
210
270
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK120N25P
IXFX120N25P
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
180
160
140
120
100
80
120
110
100
90
80
70
60
50
40
30
20
10
0
TJ = - 40ºC
25ºC
TJ = 125ºC
25ºC
125ºC
- 40ºC
60
40
20
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGS - Volts
0
20
40
60
80 100 120 140 160 180 200 220
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
VDS = 125V
I D = 60A
I G = 10mA
TJ = 125ºC
TJ = 25ºC
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100 120 140 160 180 200
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100,000
10,000
1,000
100
1,000
100
10
RDS(on) Limit
= 1 MHz
f
25µs
C
iss
100µs
1ms
C
oss
10ms
DC
TJ = 150ºC
TC = 25ºC
C
Single Pulse
rss
1
0
5
10
15
20
25
30
35
40
10
100
1000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK120N25P
IXFX120N25P
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_120N25P(88)4-27-09
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IXYS
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