BFP405FH6327XTSA1 [INFINEON]
RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, 1.40 X 0.80 MM, 0.59 MM HEIGHT, ROHS COMPLIANT, TSFP-4;
| 型号： | BFP405FH6327XTSA1 |
| 厂家： | 
Infineon |
| 描述： | RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, 1.40 X 0.80 MM, 0.59 MM HEIGHT, ROHS COMPLIANT, TSFP-4 放大器 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：530K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP405F
Low Noise Silicon Bipolar RF Transistor
• For low current applications
3
2
1
• Minimum noise figure NF
= 1.25 dB at 1.8 GHz
4
min
Outstanding G = 22.5 dB at 1.8 GHz
ms
• Transition frequency f = 25 GHz
T
• Pb-free (RoHS compliant) and halogen-free thin small
flat package (1.4 x 0.8 x 0.59 mm) with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP405F
Marking
ALs
Pin Configuration
1=B 2=E 3=C 4=E
Package
TSFP-4
-
-
Maximum Ratings at T = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
V
CEO
T = 25 °C
4.5
4.1
15
15
1.5
25
3
A
T = -55 °C
A
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
V
V
V
CES
CBO
EBO
mA
mW
°C
I
C
I
B
1)
75
P
tot
T ≤ 112 °C
Junction temperature
S
150
T
J
Storage temperature
T
-55 ... 150
1
T is measured on the emitter lead at the soldering point to the pcb
S
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
500
Unit
K/W
1)
R
thJS
1
2013-09-19
BFP405F
Electrical Characteristics at T = 25 °C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
4
-
5
-
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
10
µA
Collector-emitter cutoff current
= 15 V, V = 0
I
CES
V
CE
BE
-
-
100 nA
Collector-base cutoff current
= 5 V, I = 0
I
CBO
V
CB
E
-
-
1
µA
-
Emitter-base cutoff current
= 0.5 V, I = 0
I
EBO
V
EB
C
60
95
130
DC current gain
I = 5 mA, V = 4 V, pulse measured
h
FE
C
CE
1
For the definition of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJS
2
2013-09-19
BFP405F
Electrical Characteristics at T = 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics (verified by random sampling)
18
25
-
GHz
Transition frequency
f
T
I = 10 mA, V = 3 V, f = 2 GHz
C
CE
-
-
-
0.05
0.1 pF
Collector-base capacitance
= 2 V, f = 1 MHz, V = 0 ,
emitter grounded
C
C
C
cb
ce
eb
V
CB
BE
0.2
-
-
Collector emitter capacitance
V
= 2 V, f = 1 MHz, V = 0 ,
CE
BE
base grounded
0.25
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz, V = 0 ,
EB
CB
collector grounded
-
-
1.25
22.5
-
-
dB
dB
Minimum noise figure
NF
min
I = 2 mA, V = 2 V, f = 1.8 GHz, Z = Z
C
CE
S
Sopt
1)
Power gain, maximum stable
G
ms
I = 5 mA, V = 2 V, Z = Z ,
C
CE
S
Sopt
Z = Z
, f = 1.8 GHz
L
Lopt
2
Insertion power gain
= 2 V, I = 5 mA, f = 1.8 GHz,
|S |
-
-
-
18
14
0
-
-
-
21
V
CE
C
Z = Z = 50 Ω
S
L
2)
Third order intercept point at output
= 2 V, I = 5 mA, f = 1.8 GHz,
IP3
dBm
V
CE
C
Z = Z = 50 Ω
S
L
1dB compression point at output
P
-1dB
I = 5 mA, V = 2 V, Z = Z = 50 Ω,
C
CE
S
L
f = 1.8 GHz
1
G
= |S / S |
21 12
ms
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
2013-09-19
BFP405F
Total power dissipation P = ƒ(T )
tot
S
90
mW
70
60
50
40
30
20
10
0
°C
0
30
60
90
150
T
S
4
2013-09-19
Package TSFP-4
BFP405F
5
2013-09-19
BFP405F
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
6
2013-09-19
相关型号：
BFP405H6327XTSA1
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4
INFINEON
BFP405H6740
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4
INFINEON
BFP420
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)
INFINEON
©2020 ICPDF网 联系我们和版权申明