BFP410 [INFINEON]
NPN Silicon RF Transistor; NPN硅晶体管RF
| 型号： | BFP410 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon RF Transistor |
| 文件： | 总8页 (文件大小：547K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP410
NPN Silicon RF Transistor
• Low current device suitable e.g. for handhelds
• For high frequency oscillators e.g. DRO for LNB
3
2
1
4
• For ISM band applications like
Automatic Meter Reading, Sensors etc.
• Transit frequency f = 25 GHz
T
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP410
Marking
AKs
Pin Configuration
1=B 2=E 3=C 4=E
Package
SOT343
-
-
Maximum Ratings at T = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
V
CEO
T = 25 °C
4.5
4.1
13
13
1.5
40
A
T = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
V
V
V
CES
CBO
EBO
mA
mW
°C
I
I
C
6
150
B
1)
P
tot
T ≤ 100 °C
S
150
-55 ... 150
-55 ... 150
Junction temperature
Ambient temperature
Storage temperature
T
T
T
J
A
1T is measured on the emitter lead at the soldering point to the pcb
S
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
335
Unit
K/W
1)
R
thJS
2010-04-09
1
BFP410
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
4.5
5
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
nA
Collector-emitter cutoff current
I
CES
V
V
= 2 V, V = 0
-
-
1
2
30
50
CE
BE
= 5 V, V = 0 , T = 85 °C
CE
BE
A
(verified by random sampling)
-
-
1
30
Collector-base cutoff current
I
CBO
V
= 2 V, I = 0
E
CB
0.001
95
0.6 µA
130
Emitter-base cutoff current
= 0.5 V, I = 0
I
EBO
V
EB
C
60
-
DC current gain
I = 13 mA, V = 2 V, pulse measured
h
FE
C
CE
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
2010-04-09
2
BFP410
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics (verified by random sampling)
Transition frequency
18
25
-
GHz
f
T
I = 20 mA, V = 2 V, f = 2 GHz
C
CE
-
-
-
0.09
0.17 pF
Collector-base capacitance
= 2 V, f = 1 MHz, V = 0 ,
emitter grounded
C
C
C
cb
ce
eb
V
CB
BE
0.35
0.45
-
-
Collector emitter capacitance
V
= 2 V, f = 1 MHz, V = 0 ,
CE
BE
base grounded
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz, V = 0 ,
CB
EB
collector grounded
-
-
1.2
-
-
dB
dB
Noise figure
F
I = 2 mA, V = 2 V, f = 2 GHz, Z = Z
C
CE
S
Sopt
1)
Power gain, maximum stable
G
21.5
ms
I = 20 mA, V = 2 V, Z = Z ,
C
CE
S
Sopt
Z = Z
, f = 2 GHz
Lopt
L
2
Insertion power gain
= 2 V, I = 20 mA, f = 2 GHz,
|S |
-
-
-
18.5
23.5
10.5
-
-
-
21
V
CE
C
Z = Z = 50 Ω
S
L
2)
Third order intercept point at output
= 2 V, I = 20 mA, f = 2 GHz,
IP
dBm
3
V
CE
C
Z = Z = 50 Ω
S
L
1dB Compression point at output
P
-1dB
I = 20 mA, V = 2 V, Z = Z = 50 Ω,
C
CE
S
L
f = 2 GHz
1G
= |S / S
|
ms
21 12
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
2010-04-09
3
BFP410
Total power dissipation P = ƒ(T )
Collector-base capacitance C = ƒ(V )
tot
S
cb
CB
f = 1MHz
0.3
pF
180
mW
140
120
100
80
0.2
0.15
0.1
60
40
0.05
20
0
0
0
V
0
20
40
60
80 100 120
160
0.5
1
1.5
2
2.5
3
4
°C
V
T
CB
S
2
Transition frequency f = ƒ(I )
Power gain G , G , |S | = ƒ (f)
T
C
ma
ms
21
f = 2 GHz
V
= 2 V, I = 13 mA
CE
C
V
= parameter in V
CE
45
26
GHz
3 to 4V
dB
2V
1V
22
20
18
16
14
12
10
8
35
30
25
20
15
10
5
Gms
|S21|²
2
0.5V
Gma
6
4
2
0
mA
GHz
0
4
8
12
16
20
24
32
0
4
6
10
I
f
C
2010-04-09
4
BFP410
Power gain G , G = ƒ (I )
Power gain G , G = ƒ (V )
ma ms CE
ma
ms
C
V
= 2V
I = 13 mA
CE
C
f = parameter in GHz
f = parameter in GHz
40
40
0.15GHz
dB
dB
0.15GHz
0.45GHz
0.9GHz
32
28
24
20
16
12
8
32
28
24
20
16
12
8
0.45GHz
0.9GHz
1.5GHz
1.9GHz
2.4GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
3.5GHz
5.5GHz
10GHz
10GHz
4
4
0
0
mA
V
0
4
8
12 16 20 24 28
36
0
1
2
3
4
6
I
V
CE
C
Noise figure F = ƒ(I )
Noise figure F = ƒ(I )
C
C
V
= 2 V, Z = Z
V = 2 V, f = 2 GHz
CE
S
Sopt
CE
4.5
4
dB
dB
3.5
3
3
2.5
2
2.5
2
1.5
1
1.5
1
f= 10.0 GHz
f= 5.5 GHz
f= 2.4 GHz
f= 1.8 GHz
f= 0.9 GHz
f= 0.45 GHz
ZS=50Ohm
ZS=ZSopt
0.5
0
0.5
0
mA
mA
0
4
8
12
16
20
24
30
0
4
8
12
16
24
I
I
C
C
2010-04-09
5
BFP410
Collector current I = ƒ(V )
Collector current I = ƒ(V )
C CE
C
BE
V
=2 V
Parameter I
CE
B
10 2
25
mA
10 1
10 0
mA
160µA
90µA
15
10
5
10 -1
10 -2
10 -3
10 -4
20µA
0
V
V
0.2
0.4
0.6
0.8
1.2
0
1
2
3
5
V
V
CE
BE
DC current gain h = ƒ(I )
Base current reverse I = ƒ(V )
FE
C
B
EB
V
=2 V
CE
10 0
µA
10 3
10 -1
10 -2
10 -3
10 -4
10 -5
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
0
0.5
1
2
mA
V
I
V
EB
C
2010-04-09
6
Package SOT343
BFP410
Package Outline
0.1
0.9
0.2
2
0.1 MAX.
0.1
1.3
A
4
1
3
2
0.15
+0.1
+0.1
-0.05
0.3
0.15
-0.05
+0.1
0.6
4x
-0.05
M
0.2
A
M
0.1
Foot Print
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
2.15
Pin 1
1.1
2010-04-09
7
BFP410
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2010-04-09
8
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