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BFP420 [INFINEON]

NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz); NPN硅射频晶体管（用于高增益低噪声放大器，振荡器高达10千兆赫）
BFP420
型号： BFP420
厂家： Infineon    Infineon
描述：

NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)
NPN硅射频晶体管（用于高增益低噪声放大器，振荡器高达10千兆赫）

振荡器 晶体 放大器 小信号双极晶体管 射频小信号双极晶体管 光电二极管
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SIEGET 25  
BFP 420  
NPN Silicon RF Transistor  
3
• For high gain low noise amplifiers  
• For oscillators up to 10 GHz  
4
• Noise figure F = 1.05 dB at 1.8 GHz  
outstanding G = 20 dB at 1.8 GHz  
ms  
• Transition frequency f = 25 GHz  
2
T
• Gold metalization for high reliability  
• SIEGET 25 - Line  
VPS05605  
1
Siemens Grounded Emitter Transistor  
25 GHz f - Line  
T
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type Marking Ordering Code Pin Configuration  
Package  
BFP 420 AMs  
Q62702-F1591  
1 = B  
2 = E  
3 = C  
4 = E  
SOT-343  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
4.5  
15  
V
V
V
V
CEO  
CBO  
EBO  
1.5  
35  
mA  
I
I
C
Base current  
3
B
160  
150  
mW  
Total power dissipation, T ≤ 107 °C  
P
T
T
T
S
tot  
j
Junction temperature  
Ambient temperature  
°C  
-65 ...+150  
-65 ...+150  
A
Storage temperature  
Thermal Resistance  
stg  
1)  
Junction - soldering point  
K/W  
R
≤ 270  
thJS  
1) TS is measured on the collector lead at the soldering point to the pcb  
Semiconductor Group  
1
Jul-14-1998  
1998-11-01  
Semiconductor Group  
1
BFP 420  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC characteristics  
4.5  
-
5
-
6.5  
V
Collector-emitter breakdown voltage  
V
(BR)CEO  
I = 1 mA, I = 0  
C
B
200 nA  
Collector-base cutoff current  
= 5 V, I = 0  
I
I
CBO  
V
CB  
E
-
-
35  
µA  
-
Emitter-base cutoff current  
= 1.5 V, I = 0  
EBO  
V
EB  
C
50  
80  
150  
DC current gain  
I = 20 mA, V = 4 V  
h
FE  
C
CE  
AC characteristics  
20  
-
25  
-
GHz  
Transition frequency  
f
T
I = 30 mA, V = 3 V, f = 2 GHz  
C
CE  
0.15  
0.41  
0.55  
1.05  
0.24 pF  
Collector-base capacitance  
= 2 V, f = 1 MHz  
C
cb  
V
CB  
-
-
Collector-emitter capacitance  
= 2 V, f = 1 MHz  
C
ce  
V
CE  
-
-
Emitter-base capacitance  
= 0.5 V, f = 1 MHz  
C
eb  
V
EB  
-
1.4 dB  
Noise figure  
F
I = 5 mA, V = 2 V, Z = Z  
,
C
CE  
S
Sopt  
f = 1.8 GHz  
1)  
-
14  
-
20  
17  
22  
12  
-
Power gain  
G
ms  
I = 20 mA, V = 2 V, Z = Z  
, Z = Z  
Lopt  
,
C
CE  
S
Sopt  
L
f = 1.8 GHz  
2
-
-
-
dB  
Insertion power gain  
I = 20 mA, V = 2 V, f = 1.8 GHz,  
|S |  
21  
C
CE  
Z = Z = 50Ω  
S
L
dBm  
Third order intersept point  
IP  
3
I = 20 mA, V = 2 V, Z =Z  
, Z =Z  
,
C
CE  
S
Sopt  
L
Lopt  
f = 1.8 GHz  
-
1dB Compression point  
I = 20 mA, V = 2 V, f = 1.8 GHz,  
P
-1dB  
C
CE  
Z =Z  
, Z =Z  
L Lopt  
S
Sopt  
1) G  
= |S / S  
21 12  
|
ms  
Semiconductor Group  
Semiconductor Group  
2
Jul-14-1998  
1998-11-01  
2
BFP 420  
Common Emitter S-Parameters  
f
S
S
S
S
11  
ANG  
21  
ANG  
12  
ANG  
22  
ANG  
GHz  
MAG  
MAG  
MAG  
MAG  
V
CE  
= 2V, I = 20mA  
C
0.01  
0.1  
0.5  
1
0.543  
-2.5  
36.88  
35.4  
22.87  
13.46  
6.93  
4.59  
3.339  
2.15  
1.46  
1.2  
178.1  
164.4  
120.8  
96.3  
0.0009  
0.0075  
0.0272  
0.0398  
0.062  
0.09  
0.115  
0.156  
0.172  
0.174  
0.172  
95.8  
79.3  
58.7  
55.2  
53.5  
48.6  
40.5  
25.3  
5.4  
0.96  
-0.6  
-12.3  
-45.2  
-60.3  
-77.1  
-96.7  
-144.5  
144.1  
101.3  
86.1  
0.538  
0.448  
0.417  
0.437  
0.472  
0.53  
0.617  
0.73  
0.788  
0.82  
-25.1  
-99.3  
-143.6  
176.2  
152.8  
133.3  
109.1  
82.5  
0.946  
0.633  
0.399  
0.227  
0.134  
0.109  
0.136  
0.229  
0.319  
0.405  
2
71.5  
3
4
6
8
54.4  
38.9  
12.9  
-16.8  
-30.4  
-39.5  
9
72.6  
67  
-5  
10  
1
-11.3  
78.6  
Common Emitter Noise Parameters  
1)  
1)  
2)  
2 2)  
f
F
G
Γ
R
r
-
F
|S |  
min  
dB  
a
opt  
N
n
50Ω  
21  
GHz  
dB  
MAG  
ANG  
Ω
dB  
dB  
V
= 2V, I = 5mA  
C
CE  
0.9  
1.8  
2.4  
3
4
5
0.9  
1.05  
1.25  
1.38  
1.55  
1.75  
2.2  
20.5  
15.2  
13  
12.1  
10.3  
8.6  
0.19  
0.11  
0.11  
0.19  
0.28  
0.37  
0.44  
30  
64  
8.7  
7.5  
7
6.5  
7
0.17  
0.15  
0.14  
0.13  
0.14  
0.2  
1.02  
1.11  
1.32  
1.48  
1.83  
2.2  
20.3  
15.8  
13.5  
11.6  
9.1  
116  
165  
-155  
-130  
-117  
10  
15  
7
5.3  
6
6.4  
0.3  
3.3  
1) Input matched for minimum noise figure, output for maximum gain  
2) Z = Z = 50Ω  
S L  
For more and detailed S- and Noise-parameters please contact your local Siemens  
distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet:  
http://www.siemens.de/Semiconductor/products/35/35.htm  
Semiconductor Group  
3
Jul-14-1998  
1998-11-01  
Semiconductor Group  
3
BFP 420  
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :  
Transistor Chip Data  
IS =  
0.20045  
28.383  
2.0518  
19.705  
1.1724  
8.5757  
1.8063  
6.7661  
1
aA  
V
-
BF =  
72.534  
0.48731  
7.8287  
0.69141  
3.4849  
0.31111  
0.8051  
0.42199  
0
-
NF =  
1.2432  
19.049  
1.3325  
-
VAF =  
NE =  
IKF =  
BR =  
IKR =  
RB =  
A
-
ISE =  
NR =  
ISC =  
IRB =  
RC =  
pA  
-
VAR =  
NC =  
RBM =  
CJE =  
TF =  
V
-
A
0.019237  
0.72983  
0.10105  
0.46576  
0.23794  
234.53  
A
mA  
Ω
RE =  
Ω
fF  
ps  
mA  
V
Ω
-
VJE =  
XTF =  
PTF =  
MJC =  
CJS =  
XTB =  
FC =  
V
MJE =  
VTF =  
CJC =  
-
V
fF  
-
ITF =  
VJC =  
TR =  
deg  
0.81969  
2.3249  
0
0.30232  
0
-
XCJC = 0.3  
ns  
-
F
-
VJS =  
EG =  
TNOM  
0.75  
V
eV  
K
MJS =  
XTI =  
0
1.11  
300  
3
-
0.73234  
-
C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) :  
IS = 3.5 fA N = 1.02  
-
RS =  
10  
Ω
All parameters are ready to use, no scalling is necessary  
Package Equivalent Circuit:  
L =  
0.47  
0.53  
0.23  
0.05  
0.56  
0.58  
136  
6.9  
nH  
nH  
nH  
nH  
nH  
nH  
fF  
BI  
CCB  
L
=
BO  
L =  
EI  
L BO  
L BI  
L CI  
L CO  
B’  
Transistor  
Chip  
C’  
B
C
L
=
EO  
C’-E’-  
Diode  
E’  
L =  
CI  
CBE  
CCE  
L
=
=
=
=
CO  
L EI  
C
C
C
BE  
CB  
fF  
L EO  
134  
fF  
CE  
EHA07389  
E
Valid up to 6GHz  
The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalentcircuit,  
both leads are combined in one electrical connection.  
Extracted on behalf of SIEMENS Small Signal Semiconductors by:  
Institut für Mobil-und Satellitentechnik (IMST)  
1996 SIEMENS AG  
For examples and ready to use parameters please contact your local Siemens distributor or salesoffice to  
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm  
Semiconductor Group  
4
Jul-14-1998  
1998-11-01  
Semiconductor Group  
4
BFP 420  
For non-linear simulation:  
• Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.  
• If you need simulation of thereverse characteristics, add the diode with the  
C’-E’- diode data between collector and emitter.  
• Simulation of package is not necessary for frequenties < 100MHz.  
For higher frequencies add the wiring of package equivalent circuit around the  
non-linear transistor and diode model.  
Note:  
• This transistor is constructed in a common emitter configuration. This feature causes  
an additional reverse biased diode between emitter and collector, which does not  
effect normal operation.  
C
B
E
E
EHA07307  
Transistor Schematic Diagram  
The common emitter configuration shows the following advantages:  
• Higher gain because of lower emitter inductance.  
• Power is dissipated via the grounded emitter leads, because the chip is mounted  
on copper emitter leadframe.  
Please note, that the broadest lead is the emitter lead.  
The AC characteristics are verified by random sampling.  
Semiconductor Group  
5
Jul-14-1998  
1998-11-01  
Semiconductor Group  
5
BFP 420  
Total power dissipation P = f (T *, T )  
Transition frequency f = f (I )  
tot  
A
S
T
C
* Package mounted on epoxy  
f = 2 GHz  
V
= parameter in V  
CE  
200  
30  
GHz  
mW  
2 to 4  
1.5  
1
160  
24  
22  
20  
18  
16  
14  
12  
10  
8
P
tot  
f
T
140  
120  
100  
80  
0.75  
T
S
T
A
0.5  
60  
40  
6
4
20  
2
0
0
°C  
mA  
0
20  
40  
60  
80  
100 120  
150  
0
5
10  
15  
20  
25  
30  
40  
T ,T  
A
I
C
S
Permissible Pulse Load  
Permissible Pulse Load R  
= f (t )  
p
thJS  
P
/P  
= f (t )  
totmax totDC  
p
10 3  
10 1  
P
max  
/ P  
K/W  
R
thJS  
DC  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
-
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
D = 0  
0.2  
0.5  
10 1  
10 0  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
10 0  
s
s
t
t
p
p
Semiconductor Group  
Semiconductor Group  
6
Jul-14-1998  
1998-11-01  
6
BFP 420  
2
Power gain G , G , |S | = f ( f )  
Power gain G , G = f (I )  
ma ms C  
ma  
ms  
21  
V
= 2V, I = 20 mA  
V
= 2V  
CE  
CE  
C
f = parameter in GHz  
44  
30  
dB  
dB  
0.9  
1.8  
36  
32  
28  
24  
20  
16  
12  
8
24  
G
G
22  
G
20  
18  
16  
14  
12  
10  
8
ms  
2.4  
3
4
5
6
2
|
|S  
21  
G
ma  
6
4
4
2
0
0
GHz  
mA  
0.0  
1.0  
2.0  
3.0  
4.0  
6.0  
0
4
8
12 16 20 24 28 32  
40  
f
I
C
Power gain G , G = f (V )  
Collector-base capacitance C = f (V )  
ma  
ms  
CE  
cb  
CB  
I = 20 mA  
V
= 0, f = 1MHz  
BE  
C
f = parameter in GHz  
0.30  
30  
dB  
0.9  
1.8  
pF  
24  
G
C
cb  
22  
0.20  
0.15  
0.10  
0.05  
0.00  
20  
18  
16  
14  
12  
10  
8
2.4  
3
4
5
6
6
4
2
0
V
V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5  
4.5  
0
1
2
4
V
CE  
V
CB  
Semiconductor Group  
Semiconductor Group  
7
Jul-14-1998  
1998-11-01  
7
BFP 420  
Noise figure F = f (I )  
Noise figure F = f (I )  
C
C
V
= 2 V, Z = Z  
V
= 2 V, f = 1.8 GHz  
CE  
S
Sopt  
CE  
4.0  
3.0  
dB  
dB  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.0  
1.5  
1.0  
0.5  
0.0  
F
F
ZS = 50 Ohm  
ZS = ZSopt  
f = 6 GHz  
f = 5 GHz  
f = 4 GHz  
f = 3 GHz  
f = 2.4 GHz  
f = 1.8 GHz  
f = 0.9 GHz  
mA  
mA  
0
4
8
12 16 20 24 28 32  
38  
0
4
8
12 16 20 24 28  
36  
I
I
C
C
Source impedance for min.  
Noise figure F = f ( f )  
Noise Figure versus Frequency  
V
= 2 V, Z = Z  
CE  
S
Sopt  
V
= 2 V, I = 5 mA / 20 mA  
CE  
C
3.0  
+j50  
dB  
+j25  
+j100  
+j10  
2.0  
1.5  
1.0  
0.5  
0.0  
2.4GHz  
1.8GHz  
F
3GHz  
0.9GHz  
0
10  
25  
50  
100  
0.45GHz  
4GHz  
5GHz  
-j10  
IC = 20 mA  
IC = 5 mA  
6GHz  
-j100  
-j25  
-j50  
GHz  
0.0  
1.0  
2.0  
3.0  
4.0  
6.0  
f
Semiconductor Group  
Semiconductor Group  
8
Jul-14-1998  
1998-11-01  
8

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