BFP420F-E6327 [INFINEON]

Transistor;


型号：	BFP420F-E6327
厂家：	Infineon
描述：	Transistor
文件：	总7页 (文件大小：61K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BFP420F

NPN Silicon RF Transistor*

• For high gain low noise amplifiers

• Smallest Package 1.4 x 0.8 x 0.59 mm

• Noise figure F = 1.1 dB at 1.8 GHz

outstanding G = 20 dB at 1.8 GHz

• Transition frequency f = 25 GHz

• Gold metallization for high reliability

• SIEGET  25 GHz fT - Line

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

1=B 2=E 3=C 4=E

Package

TSFP-4

BFP420F

AMs

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

T > 0 °C

CEO

4.5

4.1

T ≤ 0 °C

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CES

CBO

EBO

1.5

°C

Base current

160

Total power dissipation

tot

T ≤ 111 °C

150

Junction temperature

Ambient temperature

Storage temperature

-65 ... 150

stg

¹Pb-containing package may be available upon special request

²T is measured on the collector lead at the soldering point to the pcb

2007-04-20

BFP420F

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

≤ 240

thJS

Electrical Characteristics at T = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ. max.

DC Characteristics

4.5

Collector-emitter breakdown voltage

(BR)CEO

I = 1 mA, I = 0

µA

Collector-emitter cutoff current

= 15 V, V = 0

CES

100 nA

Collector-base cutoff current

= 5 V, I = 0

CBO

µA

Emitter-base cutoff current

= 0.5 V, I = 0

EBO

130

DC current gain

I = 5 mA, V = 4 V, pulse measured

¹For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-04-20

BFP420F

Electrical Characteristics at T = 25°C, unless otherwise specified

Parameter

Symbol

Values

typ. max.

Unit

min.

AC Characteristics (verified by random sampling)

GHz

Transition frequency

I = 30 mA, V = 3 V, f = 2 GHz

0.15

0.3 pF

Collector-base capacitance

= 2 V, f = 1 MHz, V = 0 ,

emitter grounded

0.33

0.5

Collector emitter capacitance

= 2 V, f = 1 MHz, V = 0 ,

base grounded

Emitter-base capacitance

= 0.5 V, f = 1 MHz, V = 0 ,

collector grounded

Noise figure

1.1

I = 5 mA, V = 2 V, f = 1.8 GHz, Z = Z

Sopt

19.5

Power gain, maximum available

I = 20 mA, V = 2 V, Z = Z

Z = Z

Lopt

Sopt, L

f = 1.8 GHz

Insertion power gain

= 2 V, I = 20 mA, f = 1.8 GHz,

|S |

16.5

Z = Z = 50 Ω

Third order intercept point at output

= 2 V, I = 20 mA, f = 1.8 GHz,

dBm

Z = Z = 50 Ω

1dB Compression point at output

10.5

-1dB

I = 20 mA, V = 2 V, Z = Z = 50 Ω,

f = 1.8 GHz

1/2

¹G

= |S

/ S

| (k-(k²-1)

)

21e 12e

²IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

2007-04-20

BFP420F

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):

Transistor Chip Data:

0.20045

28.383

2.0518

19.705

1.1724

3.4849

1.8063

6.7661

1.2432

19.049

1.3325

IS =

BF =

72.534

0.48731

7.8287

0.69141

8.5757

0.31111

0.8051

0.42199

NF =

VAF =

NE =

IKF =

BR =

ISE =

NR =

0.019237 fA

VAR =

NC =

RBM =

CJE =

TF =

IKR =

RB =

ISC =

IRB =

RC =

0.72983

0.10105

0.46576

0.23794

234.53

0.3

Ω

RE =

Ω

VJE =

XTF =

PTF =

MJC =

CJS =

XTB =

FC =

MJE =

VTF =

CJC =

XCJC =

VJS =

EG =

deg

ITF =

VJC =

TR =

0.81969

2.3249

0.30232

0.75

1.11

MJS =

XTI =

300

0.73234

TNOM

C`-E`-dioden Data (Berkley-Spice 1G.6 Syntax): IS = 3.5 fA; N = 1.02 -, RS = 10 Ω

All parameters are ready to use, no scalling is necessary.

Package Equivalent Circuit:

0.22

0.28

0.22

C_CB

L _BO

L _BI

L _CI

L _CO

L =

0.42

0.26

B’

Transistor

Chip

C’

L =

C’-E’-

Diode

E’

L =

0.35

C_BE

C_CE

L _EI

0.1

BO-EO

BO-CO

EO-CO

L _EO

0.01

0.11

-0.05

EHA07389

CI-EI

The TSFP-4 package has two emitter leads. To avoid high

complexity fo the package equivalent circuit, both leads are

combined in one electrical connection.

-0.08

BI-CI

0.2

BI-EI

RLXI are series resistors for the inductances L and K

are the

0.15

Ω

xa-by

LBI

coupling coefficients between the inductances L and L . The

referencepin for the couple ports are B, E, C, B`, E`, C

For examples and ready to use parameters please contact

your local Infineon Technologies distributor or sales office to

obtain a InfineonTechnologies CD-ROM or see Internet:

http//www.infineon.com/silicondiscretes

0.11

0.13

LEI

LCI

Valid up to 6GHz

2007-04-20

BFP420F

For non-linear simulation:

· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.

· If you need simulation of the reverse characteristics, add the diode with the

C'-E'- diode data between collector and emitter.

· Simulation of package is not necessary for frequencies < 100MHz.

For higher frequencies add the wiring of package equivalent circuit around the

non-linear transistor and diode model.

Note:

· This transistor is constructed in a common emitter configuration. This feature causes

an additional reverse biased diode between emitter and collector, which does not

effect normal operation.

EHA07307

Transistor Schematic Diagram

The common emitter configuration shows the following advantages:

· Higher gain because of lower emitter inductance.

· Power is dissipated via the grounded emitter leads, because the chip is mounted

on copper emitter leadframe.

Please note, that the broadest lead is the emitter lead.

2007-04-20

Package TSFP-4

BFP420F

Package Outline

±0.05

1.4

±0.04

0.55

±0.05

0.2

±0.05

0.2

0.15

±0.05

0.5

±0.05

0.5

Foot Print

0.35

0.5

Marking Layout (Example)

Manufacturer

BFP420F

Type code

Pin 1

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

0.2

1.55

0.7

Pin 1

2007-04-20

BFP420F

Edition 2006-02-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee

of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any

examples or hints given herein, any typical values stated herein and/or any information

regarding the application of the device, Infineon Technologies hereby disclaims any

and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest

Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or

systems with the express written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause the failure of that

life-support device or system, or to affect the safety or effectiveness of that

device or system.

Life support devices or systems are intended to be implanted in the human body,

or to support and/or maintain and sustain and/or protect human life. If they fail,

it is reasonable to assume that the health of the user or other persons

may be endangered.

2007-04-20

BFP420F-E6327 [INFINEON]

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