BFP420F-E6433 [INFINEON]
Transistor;BFP420F
NPN Silicon RF Transistor*
• For high gain low noise amplifiers
• Smallest Package 1.4 x 0.8 x 0.59 mm
• Noise figure F = 1.1 dB at 1.8 GHz
3
2
1
4
outstanding G = 20 dB at 1.8 GHz
ms
• Transition frequency f = 25 GHz
T
• Gold metallization for high reliability
• SIEGET 25 GHz fT - Line
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
1=B 2=E 3=C 4=E
Package
TSFP-4
BFP420F
AMs
-
-
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
T > 0 °C
V
CEO
4.5
4.1
15
A
T ≤ 0 °C
A
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CES
CBO
EBO
15
1.5
35
mA
mW
°C
I
I
C
3
Base current
B
2)
160
Total power dissipation
P
tot
T ≤ 111 °C
S
150
Junction temperature
Ambient temperature
Storage temperature
T
T
T
j
-65 ... 150
-65 ... 150
A
stg
1Pb-containing package may be available upon special request
2T is measured on the collector lead at the soldering point to the pcb
S
2007-04-20
1
BFP420F
Thermal Resistance
Parameter
Symbol
Value
Unit
1)
K/W
Junction - soldering point
R
≤ 240
thJS
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
4.5
5
-
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
-
-
10
µA
Collector-emitter cutoff current
= 15 V, V = 0
I
CES
V
CE
BE
-
100 nA
Collector-base cutoff current
= 5 V, I = 0
I
CBO
V
CB
E
-
-
10
µA
-
Emitter-base cutoff current
= 0.5 V, I = 0
I
EBO
V
EB
C
60
95
130
DC current gain
I = 5 mA, V = 4 V, pulse measured
h
FE
C
CE
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-04-20
2
BFP420F
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics (verified by random sampling)
18
25
-
GHz
Transition frequency
f
T
I = 30 mA, V = 3 V, f = 2 GHz
C
CE
-
-
-
0.15
0.3 pF
Collector-base capacitance
= 2 V, f = 1 MHz, V = 0 ,
C
C
C
cb
ce
eb
V
CB
BE
emitter grounded
0.33
0.5
-
-
Collector emitter capacitance
V
= 2 V, f = 1 MHz, V = 0 ,
BE
CE
base grounded
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz, V = 0 ,
CB
EB
collector grounded
Noise figure
-
-
1.1
-
-
dB
F
I = 5 mA, V = 2 V, f = 1.8 GHz, Z = Z
Sopt
C
CE
S
1)
19.5
Power gain, maximum available
G
ma
I = 20 mA, V = 2 V, Z = Z
Z = Z
,
Lopt
C
CE
S
Sopt, L
f = 1.8 GHz
2
Insertion power gain
= 2 V, I = 20 mA, f = 1.8 GHz,
|S |
-
-
-
16.5
24
-
-
-
dB
21
V
CE
C
Z = Z = 50 Ω
S
L
2)
Third order intercept point at output
= 2 V, I = 20 mA, f = 1.8 GHz,
IP
dBm
3
V
CE
C
Z = Z = 50 Ω
S
L
1dB Compression point at output
P
10.5
-1dB
I = 20 mA, V = 2 V, Z = Z = 50 Ω,
C
CE
S
L
f = 1.8 GHz
1/2
1G
ma
= |S
/ S
| (k-(k²-1)
)
21e 12e
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
2007-04-20
3
BFP420F
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
0.20045
28.383
2.0518
19.705
1.1724
3.4849
1.8063
6.7661
1
fA
V
-
-
1.2432
19.049
1.3325
-
IS =
BF =
72.534
0.48731
7.8287
0.69141
8.5757
0.31111
0.8051
0.42199
0
NF =
A
-
fA
-
VAF =
NE =
IKF =
BR =
ISE =
NR =
V
-
A
0.019237 fA
VAR =
NC =
RBM =
CJE =
TF =
IKR =
RB =
ISC =
IRB =
RC =
0.72983
0.10105
0.46576
0.23794
234.53
0.3
mA
Ω
-
Ω
fF
RE =
Ω
-
V
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
ps
mA
V
-
V
deg
fF
-
ITF =
VJC =
TR =
0.81969
2.3249
0
-
0.30232
0
ns
-
F
-
0.75
V
1.11
eV
K
MJS =
XTI =
0
3
-
300
0.73234
TNOM
C`-E`-dioden Data (Berkley-Spice 1G.6 Syntax): IS = 3.5 fA; N = 1.02 -, RS = 10 Ω
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
0.22
0.28
0.22
L
=
=
=
nH
nH
nH
nH
nH
nH
fF
fF
fF
-
BO
CCB
L
EO
L
CO
L BO
L BI
L CI
L CO
L =
0.42
0.26
B’
Transistor
Chip
C’
BI
B
C
L =
EI
C’-E’-
Diode
E’
L =
0.35
34
CI
CBE
CCE
C
=
=
=
BE
2
C
L EI
BC
33
C
CE
0.1
=
K
K
K
K
K
K
BO-EO
BO-CO
EO-CO
L EO
0.01
0.11
-0.05
=
=
-
-
EHA07389
E
=
=
-
CI-EI
The TSFP-4 package has two emitter leads. To avoid high
complexity fo the package equivalent circuit, both leads are
combined in one electrical connection.
-0.08
-
BI-CI
=
0.2
-
BI-EI
RLXI are series resistors for the inductances L and K
are the
0.15
R
=
Ω
Ω
Ω
XI
xa-by
LBI
coupling coefficients between the inductances L and L . The
ax
referencepin for the couple ports are B, E, C, B`, E`, C
For examples and ready to use parameters please contact
your local Infineon Technologies distributor or sales office to
obtain a InfineonTechnologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
yb
R
=
=
0.11
0.13
LEI
R
LCI
Valid up to 6GHz
2007-04-20
4
BFP420F
For non-linear simulation:
· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
· If you need simulation of the reverse characteristics, add the diode with the
C'-E'- diode data between collector and emitter.
· Simulation of package is not necessary for frequencies < 100MHz.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Note:
· This transistor is constructed in a common emitter configuration. This feature causes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
C
B
E
E
EHA07307
Transistor Schematic Diagram
The common emitter configuration shows the following advantages:
· Higher gain because of lower emitter inductance.
· Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
2007-04-20
5
Package TSFP-4
BFP420F
Package Outline
±0.05
1.4
±0.04
0.55
±0.05
0.2
4
1
3
2
±0.05
±0.05
0.2
0.15
±0.05
0.5
±0.05
0.5
Foot Print
0.35
0.5
0.5
Marking Layout (Example)
Manufacturer
BFP420F
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
1.55
0.7
Pin 1
2007-04-20
6
BFP420F
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-20
7
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