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BFP450 [INFINEON]

NPN Silicon RF Transistor (For medium power amplifiers); NPN硅RF晶体管（对于中等功率放大器）
BFP450
型号： BFP450
厂家： Infineon    Infineon
描述：

NPN Silicon RF Transistor (For medium power amplifiers)
NPN硅RF晶体管（对于中等功率放大器）

晶体 放大器 小信号双极晶体管 射频小信号双极晶体管 功率放大器 光电二极管
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SIEGET 25  
BFP 450  
NPN Silicon RF Transistor  
3
• For medium power amplifiers  
4
• Compression point P  
= +19 dBm at 1.8 GHz  
-1dB  
maximum available gain G = 14 dB at 1.8 GHz  
ma  
Noise figure F = 1.25 dB at 1.8 GHz  
• Transition frequency f = 24 GHz  
2
T
• Gold metalization for high reliability  
• SIEGET 25 - Line  
VPS05605  
1
Siemens Grounded Emitter Transistor  
25 GHz f - Line  
T
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code  
ANs Q62702-F1590  
Pin Configuration  
Package  
BFP 450  
1 = B  
2 = E  
3 = C  
4 = E  
SOT-343  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
4.5  
15  
V
V
V
V
CEO  
CBO  
EBO  
1.5  
100  
10  
mA  
I
C
Base current  
I
B
450  
150  
mW  
Total power dissipation, T ≤ 96 °C  
P
tot  
S
Junction temperature  
Ambient temperature  
Storage temperature  
°C  
T
j
-65 ...+150  
-65 ...+150  
T
T
A
stg  
Thermal Resistance  
1)  
Junction - soldering point  
K/W  
R
≤ 130  
thJS  
1) TS is measured on the collector lead at the soldering point to the pcb  
Semiconductor Group  
1
Sep-09-1998  
1998-11-01  
Semiconductor Group  
1
BFP 450  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC characteristics  
4.5  
-
5
-
6.5  
V
Collector-emitter breakdown voltage  
V
(BR)CEO  
I = 1 mA, I = 0  
C
B
600 nA  
100 µA  
Collector-base cutoff current  
= 5 V, I = 0  
I
I
CBO  
V
CB  
E
-
-
Emitter-base cutoff current  
= 1.5 V, I = 0  
EBO  
V
EB  
C
50  
80  
150  
DC current gain  
I = 50 mA, V = 4 V  
-
h
FE  
C
CE  
AC characteristics  
GHz  
Transition frequency  
f
T
I = 90 mA, V = 3 V, f = 1 GHz  
-
15  
-
24  
17  
0.48  
-
-
C
CE  
I = 90 mA, V = 3 V, f = 2 GHz  
C
CE  
0.75 pF  
Collector-base capacitance  
= 2 V, f = 1 MHz  
C
cb  
V
CB  
-
-
-
1.33  
1.75  
1.25  
-
Collector-emitter capacitance  
= 2 V, f = 1 MHz  
C
ce  
V
CE  
-
Emitter-base capacitance  
= 0.5 V, f = 1 MHz  
C
eb  
V
EB  
1.6 dB  
Noise figure  
F
I = 10 mA, V = 2 V, Z = Z  
,
C
CE  
S
Sopt  
f = 1.8 GHz  
2)  
-
8
-
14  
11  
29  
19  
-
-
-
-
dB  
Power gain  
G
ma  
I = 50 mA, V = 2 V, Z = Z  
, Z = Z  
,
C
CE  
S
Sopt  
L
Lopt  
f = 1.8 GHz  
2
Insertion power gain  
I = 50 mA, V = 2 V, f = 1.8 GHz,  
|S |  
21  
C
CE  
Z = Z = 50Ω  
S
L
dBm  
Third order intersept point  
IP  
3
I = 50 mA, V = 3 V, Z =Z  
, Z =Z  
,
C
CE  
S
Sopt  
L
Lopt  
f = 1.8 GHz  
-
1dB Compression point  
I = 50 mA, V = 3 V, f = 1.8 GHz,  
P
-1dB  
C
CE  
Z =Z  
, Z =Z  
L Lopt  
S
Sopt  
2
1/2  
2) G  
ma  
= |S / S | (k-(k -1)  
21 12  
)
Semiconductor Group  
Semiconductor Group  
2
Sep-09-1998  
1998-11-01  
2
BFP 450  
Common Emitter S-Parameters  
f
S
S
S
S
11  
ANG  
= 2V, I = 50mA  
21  
ANG  
12  
ANG  
22  
ANG  
GHz  
MAG  
MAG  
MAG  
MAG  
V
CE  
C
0.01  
0.1  
0.5  
1
0.143  
0.469  
0.681  
0.705  
0.73  
-30.7  
69.9  
51.98  
14.86  
7.26  
3.42  
2.22  
1.62  
1.23  
1.01  
174.8  
125.6  
90.7  
74.6  
55  
0.0018  
0.0139  
0.0289  
0.047  
85.2  
59.6  
51.4  
55.7  
51.2  
42  
30.3  
20.7  
12.6  
0.904  
0.744  
0.466  
0.464  
0.491  
0.529  
0.587  
0.606  
0.625  
-6.6  
-121.7  
-172.4  
173.1  
154.7  
139.5  
124.1  
112.5  
103.7  
-64.2  
-146.1  
-172.2  
163.6  
145.5  
131.9  
119.5  
108.9  
2
0.08  
3
4
0.752  
0.783  
0.797  
0.813  
38.4  
22.4  
8.8  
0.1183  
0.1461  
0.1633  
0.1864  
5
6
-2.9  
Common Emitter Noise Parameters  
1)  
1)  
2)  
2 2)  
f
F
G
Γ
R
r
-
F
|S |  
min  
dB  
a
opt  
N
n
50Ω  
21  
GHz  
dB  
MAG  
ANG  
Ω
dB  
dB  
V
= 2V, I = 10mA  
C
CE  
0.9  
1.8  
2.4  
3
0.9  
1.25  
1.45  
1.7  
15.5  
0.29  
0.47  
0.56  
0.62  
0.66  
175  
-171  
-159  
-147  
-127  
2.7  
3
3.5  
5.5  
15.5  
0.054  
0.06  
0.07  
0.11  
0.31  
0.98  
1.74  
2.23  
3.05  
4.49  
16  
9.5  
6.8  
4.7  
1.9  
11.8  
10.9  
8.5  
4
2.1  
6.6  
1) Input matched for minimum noise figure, output for maximum gain  
2) Z = Z = 50Ω  
S L  
For more and detailed S- and Noise-parameters please contact your local Siemens  
distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet:  
http://www.siemens.de/Semiconductor/products/35/35.htm  
Semiconductor Group  
3
Sep-09-1998  
1998-11-01  
Semiconductor Group  
3
BFP 450  
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :  
Transistor Chip Data  
IS =  
0.13125  
24.165  
1.5563  
13.461  
0.70543  
5.403  
fA  
V
-
BF =  
76.123  
0.58905  
21.254  
0.25878  
2.1659  
0.45346  
0.95292  
0.69972  
0
-
NF =  
0.79652  
28.341  
1.2966  
-
VAF =  
NE =  
IKF =  
BR =  
IKR =  
RB =  
A
-
ISE =  
NR =  
ISC =  
IRB =  
RC =  
pA  
-
VAR =  
NC =  
RBM =  
CJE =  
TF =  
V
-
A
0.012292  
A
0.013181 mA  
Ω
RE =  
0.50084  
0.48672  
0.66148  
1049.5  
Ω
Ω
-
3.2276  
7.5068  
fF  
ps  
VJE =  
XTF =  
PTF =  
MJC =  
CJS =  
XTB =  
FC =  
V
MJE =  
VTF =  
CJC =  
-
V
fF  
-
ITF =  
VJC =  
TR =  
0.017655 mA  
deg  
1.1487  
V
ns  
-
0.50644  
0
-
XCJC = 0.28285  
2.6912  
F
-
VJS =  
EG =  
TNOM  
0.75  
1.11  
300  
V
eV  
K
MJS =  
XTI =  
0
3
0
-
0.91274  
-
C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) :  
IS = 25 fA N = 1.05  
-
RS =  
5
Ω
All parameters are ready to use, no scalling is necessary  
Package Equivalent Circuit:  
0.31  
0.63  
0.2  
nH  
nH  
nH  
nH  
nH  
nH  
fF  
L =  
CCB  
BI  
L
=
BO  
L =  
L BO  
L BI  
L CI  
L CO  
EI  
B’  
Transistor  
Chip  
C’  
B
C
0.05  
0.29  
0.68  
208  
3.2  
L
=
EO  
C’-E’-  
Diode  
E’  
L =  
CI  
CBE  
CCE  
L
=
=
=
=
CO  
L EI  
C
C
C
BE  
CB  
CE  
fF  
L EO  
213  
fF  
EHA07389  
E
Valid up to 6GHz  
The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalentcircuit,  
both leads are combined in one electrical connection.  
Extracted on behalf of SIEMENS Small Signal Semiconductors by:  
Institut für Mobil-und Satellitentechnik (IMST)  
1996 SIEMENS AG  
For examples and ready to use parameters please contact your local Siemens distributor or salesoffice to  
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm  
Semiconductor Group  
4
Sep-09-1998  
1998-11-01  
Semiconductor Group  
4
BFP 450  
For non-linear simulation:  
• Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.  
• If you need simulation of thereverse characteristics, add the diode with the  
C’-E’- diode data between collector and emitter.  
• Simulation of package is not necessary for frequenties < 100MHz.  
For higher frequencies add the wiring of package equivalent circuit around the  
non-linear transistor and diode model.  
Note:  
• This transistor is constructed in a common emitter configuration. This feature causes  
an additional reverse biased diode between emitter and collector, which does not  
effect normal operation.  
C
B
E
E
EHA07307  
Transistor Schematic Diagram  
The common emitter configuration shows the following advantages:  
• Higher gain because of lower emitter inductance.  
• Power is dissipated via the grounded emitter leads, because the chip is mounted  
on copper emitter leadframe.  
Please note, that the broadest lead is the emitter lead.  
The AC characteristics are verified by random sampling.  
Semiconductor Group  
5
Sep-09-1998  
1998-11-01  
Semiconductor Group  
5
BFP 450  
Total power dissipation P = f (T *, T )  
Transition frequency f = f (I )  
tot  
A
S
T
C
* Package mounted on epoxy  
f = 1 GHz  
V
= parameter in V  
CE  
500  
28  
GHz  
mW  
2 to 4  
24  
22  
20  
18  
16  
14  
12  
10  
8
1.5  
1
400  
350  
T
S
0.75  
T
A
300  
P
f
250  
200  
150  
100  
50  
0.5  
6
4
2
0
0
°C  
mA  
0
20  
40  
60  
80  
100 120  
150  
0
20  
40  
60  
80  
120  
T ,T  
A
I
C
S
Permissible Pulse Load  
Permissible Pulse Load R  
= f (t )  
p
thJS  
P
/P  
= f (t )  
totmax totDC  
p
10 3  
10 1  
K/W  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
P
/P  
R
10 2  
-
0.2  
0.5  
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 1  
10 0  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
s
s
t
t
p
p
Semiconductor Group  
Semiconductor Group  
6
Sep-09-1998  
1998-11-01  
6
BFP 450  
2
Power gain G , G , |S | = f ( f )  
Power gain G , G = f (I )  
ma ms C  
ma  
ms  
21  
V
= 2V, I = 50 mA  
V
= 2V  
CE  
CE  
C
f = parameter in GHz  
48  
28  
dB  
dB  
24  
22  
20  
18  
40  
36  
32  
28  
24  
20  
16  
12  
8
0.9  
1.8  
G
ms  
G
G
16  
14  
12  
10  
8
2.4  
3
4
5
6
G
ma  
6
2
|
|S  
21  
4
4
2
0
0
GHz  
mA  
0.0  
1.0  
2.0  
3.0  
4.0  
6.0  
0
20  
40  
60  
80  
120  
f
I
C
Power gain G , G = f (V )  
Collector-base capacitance C = f (V )  
ma  
ms  
CE  
cb  
CB  
I = 50 mA  
V
= 0, f = 1MHz  
C
BE  
f = Parameter in GHz  
26  
dB  
1.4  
pF  
0.9  
1.8  
22  
20  
18  
1.0  
0.8  
0.6  
0.4  
0.2  
16  
G
C
14  
12  
10  
8
2.4  
3
4
5
6
6
4
2
0
0.0  
V
V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5  
4.5  
0.0 0.5 1.0  
1.5 2.0 2.5 3.0  
4.0  
V
CE  
V
CB  
Semiconductor Group  
Semiconductor Group  
7
Sep-09-1998  
1998-11-01  
7
BFP 450  
Noise figure F = f (I )  
Noise figure F = f (I )  
C
C
V
= 2 V, Z = Z  
V
= 2 V, f = 1.8 GHz  
CE  
S
Sopt  
CE  
4.5  
3.0  
dB  
dB  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.0  
1.5  
1.0  
0.5  
0.0  
F
F
f = 4 GHz  
f = 3 GHz  
f = 2.4 GHz  
f = 1.8 GHz  
f = 0.9 GHz  
ZS = 50Ohm  
ZS = ZSopt  
mA  
mA  
0
10 20 30 40 50 60 70 80  
100  
0
10 20 30 40 50 60 70 80  
100  
I
I
C
C
Source impedance for min.  
Noise figure F = f ( f )  
Noise Figure versus Frequency  
V
= 2 V, Z = Z  
CE  
S
Sopt  
V
= 2 V, I = 10 mA / 50 mA  
CE  
C
3.0  
+j50  
dB  
+j25  
+j100  
+j10  
2.0  
1.5  
1.0  
0.5  
0.0  
F
0.9GHz  
1.8GHz  
0
10  
25  
50  
100  
2.4GHz  
3GHz  
10mA  
50mA  
-j10  
IC = 50 mA  
IC = 10 mA  
4GHz  
-j100  
-j25  
-j50  
GHz  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5  
4.5  
f
Semiconductor Group  
Semiconductor Group  
8
Sep-09-1998  
1998-11-01  
8

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