BFP420E6433HTMA1 [INFINEON]
RF Small Signal Bipolar Transistor,;
| 型号： | BFP420E6433HTMA1 |
| 厂家： | 
Infineon |
| 描述： | RF Small Signal Bipolar Transistor, |
| 文件： | 总9页 (文件大小：561K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP420
Low Noise Silicon Bipolar RF Transistor
• For high gain and low noise amplifiers
3
• Minimum noise figure NF
= 1.1 dB at 1.8 GHz
min
2
1
4
Outstanding G = 21 dB at 1.8 GHz
ms
• For oscillators up to 10 GHz
• Transition frequency f = 25 GHz
T
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP420
Marking
AMs
Pin Configuration
1=B 2=E 3=C 4=E
Package
SOT343
-
-
Maximum Ratings at T = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
V
CEO
T = 25 °C
4.5
4.1
15
15
1.5
60
A
T = -55 °C
A
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CES
CBO
EBO
mA
mW
°C
I
C
9
210
Base current
Total power dissipation
I
B
1)
P
tot
T ≤ 98 °C
S
150
Junction temperature
T
J
Storage temperature
T
-55 ... 150
1
T is measured on the emitter lead at the soldering point to the pcb
S
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
250
Unit
K/W
1)
R
thJS
1
2013-09-19
BFP420
Electrical Characteristics at T = 25 °C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
4.5
5
-
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
-
-
10
µA
Collector-emitter cutoff current
= 15 V, V = 0
I
CES
V
CE
BE
-
100 nA
Collector-base cutoff current
= 5 V, I = 0
I
CBO
V
CB
E
-
-
3
µA
-
Emitter-base cutoff current
= 0.5 V, I = 0
I
EBO
V
EB
C
60
95
130
DC current gain
I = 20 mA, V = 4 V, pulse measured
h
FE
C
CE
1
For the definition of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJS
2
2013-09-19
BFP420
Electrical Characteristics at T = 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics (verified by random sampling)
18
25
-
GHz
Transition frequency
f
T
I = 30 mA, V = 3 V, f = 2 GHz
C
CE
-
-
-
0.15
0.3 pF
Collector-base capacitance
= 2 V, f = 1 MHz, V = 0 ,
emitter grounded
C
C
C
cb
ce
eb
V
CB
BE
0.37
0.55
-
-
Collector emitter capacitance
V
= 2 V, f = 1 MHz, V = 0 ,
CE
BE
base grounded
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz, V = 0 ,
EB
CB
collector grounded
-
-
1.1
21
-
-
dB
dB
Minimum noise figure
NF
min
I = 5 mA, V = 2 V, f = 1.8 GHz, Z = Z
C
CE
S
Sopt
1)
Power gain, maximum stable
G
ms
I = 20 mA, V = 2 V, Z = Z ,
C
CE
S
Sopt
Z = Z
, f = 1.8 GHz
L
Lopt
2
Insertion power gain
= 2 V, I = 20 mA, f = 1.8 GHz,
|S |
14
-
17
22
12
-
-
-
21
V
CE
C
Z = Z = 50 Ω
S
L
2)
Third order intercept point at output
= 2 V, I = 20 mA, f = 1.8 GHz,
IP3
dBm
V
CE
C
Z = Z = 50 Ω
S
L
1dB compression point at output
P
-
-1dB
I = 20 mA, V = 2 V, Z = Z = 50 Ω,
C
CE
S
L
f = 1.8 GHz
1
G
= |S / S |
21 12
ms
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
2013-09-19
BFP420
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
tot
S
thJS
p
10 3
240
mW
K/W
180
150
120
90
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
60
30
10 1
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
°C
s
0
30
60
90
150
T
t
p
S
Permissible Pulse Load
Collector-base capacitance C = ƒ(V
)
cb
CB
P
/P
= ƒ(t )
f = 1MHz
totmax totDC
p
10 1
0.3
pF
0.2
0.15
0.1
D = 0
0.005
0.01
0.02
0.05
0.1
-
0.2
0.5
0.05
10 0
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
0
1
2
4
s
V
t
V
CB
p
4
2013-09-19
BFP420
Transition frequency f = ƒ(I )
Power gain G , G , |S |² = ƒ (f)
ma ms 21
T
C
f = 2 GHz
V
= 2 V, I = 20 mA
CE C
V
= parameter in V
CE
30
44
GHz
2 to 4
1.5
40
36
32
28
24
20
16
12
8
24
22
20
18
16
14
12
10
8
1
0.75
Gms
0.5
Gma
2
|S21|
6
4
2
4
0
mA
0
5
10
15
20
25
30
40
0
0
1
2
3
4
5
6
I
f [GHz]
C
Power gain G , G = ƒ (I )
Power gain G , G = ƒ (V
)
ma
ms
C
ma
ms
CE
V
= 2V
I = 20 mA
CE
C
f = parameter in GHz
f = parameter in GHz
30
dB
30
dB
0.9
1.8
0.9
1.8
24
22
20
18
16
14
12
10
8
24
22
20
18
16
14
12
10
8
2.4
3
2.4
3
4
4
5
6
5
6
6
6
4
4
2
2
0
0
mA
V
0
4
8
12 16 20 24 28 32
40
0
0.5
1
1.5
2
2.5
3
3.5
4.5
I
V
C
CE
5
2013-09-19
BFP420
Noise figure F = ƒ(I )
Noise figure F = ƒ(I )
C
C
V
= 2 V, Z = Z
V = 2 V, f = 1.8 GHz
CE
S
Sopt
CE
4
3
dB
dB
3
2.5
2
2
1.5
1
ZS = 50 Ohm
ZS = ZSopt
1.5
1
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
0.5
0
0.5
0
mA
mA
0
4
8
12 16 20 24 28 32
38
0
4
8
12 16 20 24 28
36
I
I
C
C
Noise figure F = ƒ(f)
Source impedance for min.
V
= 2 V, Z = Z
noise figure vs. frequency
CE
S
Sopt
V
= 2 V, I = 5 mA / 20 mA
CE
C
3
+j50
dB
+j25
+j100
+j10
2
1.5
1
2.4GHz
1.8GHz
0.9GHz
3GHz
0
10
25
50
100
0.45GHz
4GHz
5GHz
-j10
IC = 20 mA
IC = 5 mA
6GHz
0.5
0
-j25
-j100
-j50
GHz
0
1
2
3
4
6
f
6
2013-09-19
BFP420
SPICE GP Model
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet website
www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design. You find the BFP420 SPICE GP model in the internet
in MWO- and ADS-format, which you can import into these circuit simulation tools
very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device. The model
parameters have been extracted and verified up to 10 GHz using typical devices.
The BFP420 SPICE GP model reflects the typical DC- and RF-performance
within the limitations which are given by the SPICE GP model itself. Besides the DC
characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise)
and intermodulation have been extracted.
7
2013-09-19
Package SOT343
BFP420
8
2013-09-19
BFP420
Edition 2009-12-02
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that device
or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be
endangered.
9
2013-09-19
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