BFP405H6740 [INFINEON]
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4;
| 型号： | BFP405H6740 |
| 厂家： | 
Infineon |
| 描述： | RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4 放大器 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：553K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP405
Low Noise Silicon Bipolar RF Transistor
• For low current applications
• For oscillators up to 12 GHz
3
2
1
4
• Minimum noise figure NF
= 1.25 dB at 1.8 GHz
min
Outstanding G = 23 dB at 1.8 GHz
ms
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP405
Marking
ALs
Pin Configuration
1=B 2=E 3=C 4=E
Package
SOT343
-
-
Maximum Ratings at T = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
V
CEO
T = 25 °C
4.5
4.1
15
15
1.5
25
3
A
T = -55 °C
A
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
V
V
V
CES
CBO
EBO
mA
mW
°C
I
C
I
B
1)
75
P
tot
T ≤ 110 °C
Junction temperature
Ambient temperature
S
150
-65 ... 150
-65 ... 150
T
J
T
Storage temperature
T
1
T is measured on the emitter lead at the soldering point to the pcb
S
1
2013-09-19
BFP405
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
530
Unit
K/W
1)
R
thJS
Electrical Characteristics at T = 25 °C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
4.5
5
-
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
-
-
10
µA
Collector-emitter cutoff current
= 15 V, V = 0
I
CES
V
CE
BE
-
100 nA
Collector-base cutoff current
= 5 V, I = 0
I
CBO
V
CB
E
-
-
1
µA
-
Emitter-base cutoff current
= 0.5 V, I = 0
I
EBO
V
EB
C
60
95
130
DC current gain
I = 5 mA, V = 4 V, pulse measured
h
FE
C
CE
1
For the definition of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJS
2
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BFP405
Electrical Characteristics at T = 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics (verified by random sampling)
18
25
-
GHz
Transition frequency
f
T
I = 10 mA, V = 3 V, f = 2 GHz
C
CE
-
-
-
0.05
0.1 pF
Collector-base capacitance
= 2 V, f = 1 MHz, V = 0 ,
emitter grounded
C
C
C
cb
ce
eb
V
CB
BE
0.24
0.29
-
-
Collector emitter capacitance
V
= 2 V, f = 1 MHz, V = 0 ,
CE
BE
base grounded
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz, V = 0 ,
EB
CB
collector grounded
-
-
1.25
23
-
-
dB
dB
Minimum noise figure
NF
min
I = 2 mA, V = 2 V, f = 1.8 GHz, Z = Z
C
CE
S
Sopt
1)
Power gain, maximum stable
G
ms
I = 5 mA, V = 2 V, Z = Z ,
C
CE
S
Sopt
Z = Z
, f = 1.8 GHz
L
Lopt
2
Insertion power gain
= 2 V, I = 5 mA, f = 1.8 GHz,
|S |
14
-
18.5
15
5
-
-
-
21
V
CE
C
Z = Z = 50 Ω
S
L
2)
Third order intercept point at output
= 2 V, I = 5 mA, f = 1.8 GHz,
IP3
dBm
V
CE
C
Z = Z = 50 Ω
S
L
1dB compression point at output
P
-
-1dB
I = 5 mA, V = 2 V, Z = Z = 50 Ω,
C
CE
S
L
f = 1.8 GHz
1
G
= |S / S |
21 12
ms
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
2013-09-19
BFP405
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
thJS p
tot
S
10 3
90
mW
70
60
50
40
30
20
10
0
K/W
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
°C
s
0
30
60
90
150
T
t
p
S
Permissible Pulse Load
Collector-base capacitance C = ƒ(V )
cb
CB
P
/P
= ƒ(t )
f = 1MHz
totmax totDC
p
10 1
0.3
pF
0.2
0.15
0.1
D = 0
0.005
0.01
0.02
0.05
0.1
-
0.2
0.5
0.05
10 0
0
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
0.5
1
1.5
2
2.5
3
4
s
V
t
V
CB
p
4
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BFP405
2
Transition frequency f = ƒ(I )
Power gain G , G , |S | = ƒ (f)
ma ms 21
T
C
f = 2 GHz
V
= 3 V, I = 5 mA
CE
C
V
= parameter in V
CE
26
44
GHz
dB
4V
3V
22
20
18
16
14
12
10
8
36
32
28
24
20
16
12
8
2V
1.5V
Gms
1V
|S21|²
Gma
0.5V
6
4
4
0
mA
GHz
0
4
8
12
16
22
0
1
2
3
4
5
6
7
8
10
I
f
C
Power gain G , G = ƒ (I )
Power gain G , G = ƒ (V )
ma ms CE
ma
ms
C
V
= 3V
I = 5 mA
CE
C
f = parameter in GHz
f = parameter in GHz
40
40
0.15GHz
dB
dB
0.15GHz
0.45GHz
0.45GHz
0.9GHz
32
28
24
20
16
12
8
32
28
24
20
16
12
8
0.9GHz
1.5GHz
2.4GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
3.5GHz
5.5GHz
10GHz
10GHz
4
4
0
0
mA
V
0
4
8
12
16
20
26
0
1
2
3
4
6
I
V
CE
C
5
2013-09-19
BFP405
Noise figure F = ƒ(I )
Noise figure F = ƒ(I )
C
C
V
= 2 V, Z = Z
V = 2 V, f = 1.8 GHz
CE
S
Sopt
CE
4
4
dB
dB
3
2.5
2
3
2.5
2
1.5
1
1.5
1
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
ZS = 50 Ohm
ZS = ZSopt
0.5
0
0.5
0
mA
mA
0
2
4
6
8
12
0
2
4
6
8
12
I
I
C
C
Noise figure F = ƒ(f)
Source impedance for min.
V
= 1 V, Z = Z
noise figure vs. frequency
CE
S
Sopt
V
= 3 V, I = 2 mA / 5 mA
CE
C
3
+j50
dB
+j25
+j100
+j10
2
1.5
1
3GHz
4GHz
1.8GHz
5GHz
0.9GHz
6GHz
25
0
10
50
100
2mA
5mA
IC = 5 mA
IC = 2 mA
-j10
0.5
0
-j25
-j100
-j50
GHz
0
1
2
3
4
6
f
6
2013-09-19
BFP405
SPICE GP Model
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet website
www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design. You find the BFP405 SPICE GP model in the internet
in MWO- and ADS-format, which you can import into these circuit simulation tools
very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device. The model
parameters have been extracted and verified up to 6 GHz using typical devices.
The BFP405 SPICE GP model reflects the typical DC- and RF-performance
within the limitations which are given by the SPICE GP model itself. Besides the DC
characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise)
and intermodulation have been extracted.
7
2013-09-19
Package SOT343
BFP405
8
2013-09-19
BFP405
Edition 2009-11-05
Published by Infineon Technologies AG,
85579 Neubiberg, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding cicuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that device
or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be
endangered.
9
2013-09-19
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