HSBD379 [HUASHAN]
NPN SILICON TRANSISTOR; NPN硅晶体管
| 型号： | HSBD379 |
| 厂家： | 
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
| 描述： | NPN SILICON TRANSISTOR |
| 文件： | 总1页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HSBD379
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃
Tj— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃
PC— — Collector Dissipation（Tc=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 25W
VCBO — — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 100V
VCEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 80V
VEBO — — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 5V
IC— — Collector Curren（t Pulse）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 3A
IC— — Collector Curren（t DC）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 2A
Ib— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 1A
1―Emitter, E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
Min
Typ
Max
Unit
Test Conditions
ICBO
IEBO
VCB=80V, IE=0
2 μA
100 μA
375
VEB=5V, IC=0
*HFE（1） DC Current Gain
VCE=2V, IC=150mA
VCE=2V, IC=1A
IC=1A, IB=0.1A
VCE=2V, IC=1A
IC=100mA, IB=0
40
20
*HFE（2） DC Current Gain
*VCE(sat) Collector- Emitter Saturation Voltage
1
V
*VBE(on)
Base-Emitter On Voltage
1.5 V
VCEO(sus) Collector-Emitter Sustaining Voltage
80
V
V
BVCBO
tON
Collector-Base Breakdown Voltage
Turn-On Time
100
IC=100μA, IE=0
VCC=30V, IC=0.5A
50
nS
nS
tOFF
Turn-Off Time
IB1=-IB2=0.05A
500
* Pulse Test:PW=350μS,Duty Cycle=2% Pulsed
█ hFE(3) Classification
Cassification
6
10
16
25
hFE(3)
40~100
63~160
100~250
150~375
相关型号：
©2020 ICPDF网 联系我们和版权申明