HSBD380 [HUASHAN]
PNP SILICON TRANSISTOR; PNP硅晶体管型号: | HSBD380 |
厂家: | SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
描述: | PNP SILICON TRANSISTOR |
文件: | 总1页 (文件大小:235K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HSBD380
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃
Tj— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃
PC— — Collector Dissipation(Tc=25℃)⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 25W
VCBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -100V
VCEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -80V
VEBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5V
IC— — Collector Curren(t Pulse)⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -3A
IC— — Collector Current(DC)⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -2A
Ib— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -1A
1―Emitter, E
2―Collector,C
3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
Min
Typ
Max
Unit
Test Conditions
VCB=-80V, IE=0
ICBO
IEBO
-2 μA
-100 μA
375
VEB=-5V, IC=0
*HFE(1) DC Current Gain
VCE=-2V, IC=-150mA
VCE=-2V, IC=-1A
IC=-1A, IB=-0.1A
VCE=-2V, IC=-1A
IC=-100mA, IB=0
40
20
*HFE(2) DC Current Gain
*VCE(sat) Collector- Emitter Saturation Voltage
-1
V
*VBE(on)
Base-Emitter On Voltage
-1.5 V
VCEO(sus) Collector-Emitter Sustaining Voltage
-80
V
V
BVCBO
tON
Collector-Base Breakdown Voltage
Turn-On Time
-100
IC=-100μA, IE=0
VCC=-30V, IC=-0.5A
50
nS
nS
tOFF
Turn-Off Time
IB1=-IB2=-0.05A
500
* Pulse Test:PW=350μS,Duty Cycle=2% Pulsed
█ hFE(3) Classification
Cassification
6
10
16
25
hFE(3)
40~100
63~160
100~250
150~375
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