HSBD436 [HUASHAN]
PNP SILICON TRANSISTOR; PNP硅晶体管型号: | HSBD436 |
厂家: | SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
描述: | PNP SILICON TRANSISTOR |
文件: | 总1页 (文件大小:121K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HSBD436
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 36W
VCBO——Collector-Base Voltage…………………………… -32V
VCEO——Collector-Emitter Voltage………………………… -32V
VCES——Collector-Emitter Voltage………………………… -32V
VEBO——Emitter-Base Voltage………………………………… -5V
IC——Collector Curren(t Pulse)………………………………… -7A
IC——Collector Current(DC)………………………………… -4A
IB——Base Current………………………………………………-1A
1―Emitter, E
2―Collector,C
3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
-100 μA VCB=-32V, IE=0
-1 mA VEB=-5V, IC=0
VCE=-5V, IC=-10mA
*HFE(1) DC Current Gain
40 140
85 140
50
*HFE(2) DC Current Gain
VCE=-1V, IC=-500mA
VCE=-1V, IC=-2A
*HFE(3) DC Current Gain
*VCE(sat) Collector- Emitter Saturation Voltage
-0.2 -0.5 V
IC=-2A, IB=-0.2A
VCE=-1V, IC=-2A
IC=-100mA, IB=0
*VBE(on)
Base-Emitter On Voltage
VCEO(sus) Collector-Emitter Sustaining Voltage -32
ft Current Gain-Bandwidth Product
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
-1.1 V
V
3
MHz VCE=-1V, IC=-250mA,
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