HSBD439 [HUASHAN]
NPN SILICON TRANSISTOR; NPN硅晶体管
| 型号： | HSBD439 |
| 厂家： | 
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
| 描述： | NPN SILICON TRANSISTOR |
| 文件： | 总1页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HSBD439
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃
Tj— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃
PC— — Collector Dissipation（Tc=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 36W
1―Emitter, E
2―Collector，C
3―Base，B
V
CBO — — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 60V
CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 60V
CES — — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 60V
EBO — — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 5V
V
V
V
IC— — Collector Curren（t Pulse）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 7A
IC— — Collector Curren（t DC）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 4A
IB— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 1A
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
Min
Typ
Max Unit
Test Conditions
ICBO
IEBO
ICES
VCB=60V, IE=0
100 μA
1 mA
VEB=5V, IC=0
VCE=60V, VEB=0
VCE=5V, IC=10mA
VCE=1V, IC=500mA
VCE=1V, IC=2A
100 μA
*HFE（1） DC Current Gain
20 130
40 140
25
*HFE（2） DC Current Gain
*HFE（3） DC Current Gain
*VCE(sat) Collector- Emitter Saturation Voltage
*VBE(on1) Base-Emitter On Voltage
*VBE(on2) Base-Emitter On Voltage
VCEO(sus) Collector-Emitter Sustaining Voltage
IC=2A, IB=0.2A
VCE=5V, IC=10mA
VCE=1V, IC=2A
0.8 V
0.58
V
1.5 V
V
IC=100mA, IB=0
VCE=1V, IC=250mA,
60
3
ft
Current Gain-Bandwidth Product
MHz
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
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