HSBD442 [HUASHAN]
PNP SILICON TRANSISTOR; PNP硅晶体管型号: | HSBD442 |
厂家: | SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
描述: | PNP SILICON TRANSISTOR |
文件: | 总1页 (文件大小:235K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HSBD442
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃
Tj— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃
PC— — Collector Dissipation(Tc=25℃)⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 36W
VCBO — — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -80V
VCEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -80V
VCES— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -80V
VEBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5V
IC— — Collector Curren(t Pulse)⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -7A
IC— — Collector Current(DC)⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -4A
IB— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -1A
1―Emitter, E
2―Collector,C
3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
Min
Typ
Max Unit
Test Conditions
VCB=-80V, IE=0
ICBO
IEBO
ICES
-100 μA
-1 mA
VEB=-5V, IC=0
VCE=-80V, VEB=0
VCE=-5V, IC=-10mA
VCE=-1V, IC=-500mA
VCE=-1V, IC=-2A
IC=-2A, IB=-0.2A
VCE=-5V, IC=-10mA
VCE=-1V, IC=-2A
IC=-100mA, IB=0
VCE=-1V, IC=-250mA,
-100 μA
*HFE(1) DC Current Gain
15 140
40 140
15
*HFE(2) DC Current Gain
*HFE(3) DC Current Gain
*VCE(sat) Collector- Emitter Saturation Voltage
*VBE(on1) Base-Emitter On Voltage
*VBE(on2) Base-Emitter On Voltage
VCEO(sus) Collector-Emitter Sustaining Voltage
-0.8 V
-0.58
V
-1.5 V
V
-80
3
ft
Current Gain-Bandwidth Product
MHz
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
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