HSBD435 [HUASHAN]
NPN SILICON TRANSISTOR; NPN硅晶体管型号: | HSBD435 |
厂家: | SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
描述: | NPN SILICON TRANSISTOR |
文件: | 总1页 (文件大小:121K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HSBD435
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 36W
VCBO——Collector-Base Voltage…………………………… 32V
VCEO——Collector-Emitter Voltage………………………… 32V
VCES——Collector-Emitter Voltage………………………… 32V
VEBO——Emitter-Base Voltage………………………………… 5V
IC——Collector Current(Pulse)………………………………… 7A
IC——Collector Curren(t DC)…………………………………… 4A
IB——Base Current………………………………………………1A
1―Emitter, E
2―Collector,C
3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
100 μA VCB=32V, IE=0
mA VEB=5V, IC=0
VCE=5V, IC=10mA
1
*HFE(1) DC Current Gain
40 130
85 140
50
*HFE(2) DC Current Gain
VCE=1V, IC=500mA
VCE=1V, IC=2A
IC=2A, IB=0.2A
VCE=1V, IC=2A
IC=100mA, IB=0
*HFE(3) DC Current Gain
*VCE(sat) Collector- Emitter Saturation Voltage
0.2 0.5 V
*VBE(on)
Base-Emitter On Voltage
VCEO(sus) Collector-Emitter Sustaining Voltage 32
ft Current Gain-Bandwidth Product
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
1.1 V
V
3
MHz VCE=1V, IC=250mA,
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