HSBD434 [HUASHAN]
PNP SILICON TRANSISTOR; PNP硅晶体管
| 型号： | HSBD434 |
| 厂家： | 
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
| 描述： | PNP SILICON TRANSISTOR |
| 文件： | 总1页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HSBD434
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃
Tj— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃
PC— — Collector Dissipation（Tc=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 36W
VCBO — — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -22V
VCEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -22V
VCES— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -22V
VEBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5V
IC— — Collector Curren（t Pulse）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -7A
IC— — Collector Current（DC）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -4A
IB— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -1A
1―Emitter, E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
VCB=-22V, IE=0
ICBO
IEBO
ICES
-100 μA
-1 mA
VEB=-5V, IC=0
VCE=-22V, VEB=0
VCE=-5V, IC=-10mA
VCE=-1V, IC=-500mA
VCE=-1V, IC=-2A
IC=-2A, IB=-0.2A
VCE=-1V, IC=-2A
IC=-100mA, IB=0
VCE=-1V, IC=-250mA,
-100 μA
*HFE（1） DC Current Gain
40 140
85 140
50
*HFE（2） DC Current Gain
*HFE（3） DC Current Gain
*VCE(sat) Collector- Emitter Saturation Voltage
-0.2 -0.5 V
*VBE(on)
Base-Emitter On Voltage
VCEO(sus) Collector-Emitter Sustaining Voltage
ft Current Gain-Bandwidth Product
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
-1.1 V
-22
3
V
MHz
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