HSBD433 [HUASHAN]
NPN SILICON TRANSISTOR; NPN硅晶体管型号: | HSBD433 |
厂家: | SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
描述: | NPN SILICON TRANSISTOR |
文件: | 总1页 (文件大小:234K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HSBD433
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃
Tj— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃
PC— — Collector Dissipation(Tc=25℃)⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 36W
VCBO — — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 22V
VCEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 22V
VCES — — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 22V
VEBO — — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 5V
IC— — Collector Curren(t Pulse)⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 7A
IC— — Collector Curren(t DC)⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 4A
IB— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 1A
1―Emitter, E
2―Collector,C
3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
ICBO
IEBO
ICES
VCB=22V, IE=0
100 μA
mA
100 μA
VEB=5V, IC=0
1
VCE=22V, VEB=0
VCE=5V, IC=10mA
VCE=1V, IC=500mA
VCE=1V, IC=2A
IC=2A, IB=0.2A
VCE=1V, IC=2A
IC=100mA, IB=0
VCE=1V, IC=250mA,
*HFE(1) DC Current Gain
40 130
85 140
50
*HFE(2) DC Current Gain
*HFE(3) DC Current Gain
*VCE(sat) Collector- Emitter Saturation Voltage
0.2 0.5 V
*VBE(on)
Base-Emitter On Voltage
VCEO(sus) Collector-Emitter Sustaining Voltage
ft Current Gain-Bandwidth Product
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
1.1 V
22
3
V
MHz
相关型号:
©2020 ICPDF网 联系我们和版权申明