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AON3806 [FREESCALE]

20V Dual N-Channel MOSFET; 20V双N沟道MOSFET
AON3806
型号： AON3806
厂家： Freescale    Freescale
描述：

20V Dual N-Channel MOSFET
20V双N沟道MOSFET
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AON3806  
20V Dual N-Channel MOSFET  
General Description  
The AON3806 uses advanced trench technology to  
provide excellent RDS(ON) , low gate charge and  
GS(MAX)  
rating. It is ESD protected.  
operation with gate voltages as low as 2.5V while retaining a 12V V  
bi-directional load switch, facilitated by its commondrain  
This device is suitable for use as a uni-directional or  
configuration.  
Features  
VDS  
20V  
ID (at VGS=4.5V)  
RDS(ON) (at VGS=4.5V)  
RDS(ON) (at VGS =4.0V)  
6A  
< 22mΩ  
< 24mΩ  
RDS(ON) (at VGS =2.5V)  
< 33mΩ  
D1  
D2  
Top View  
1
2
3
4
8
S2  
G2  
S1  
G1  
D2  
7
6
D2  
D1  
D1  
G1  
G2  
5
S1  
S2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
20  
±12  
6
V
V
VGS  
TA=25°C  
TA=70°C  
Continuous Drain  
Current G  
ID  
4.7  
A
Pulsed Drain Current C  
IDM  
PD  
24  
2.5  
TA=25°C  
TA=70°C  
W
°C  
Power Dissipation B  
1.6  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
Max  
50  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
≤ 10s  
40  
75  
30  
RθJA  
Steady-State  
Steady-State  
95  
RθJL  
40  
1 / 5  
www.freescale.net.cn  
AON3806  
20V Dual N-Channel MOSFET  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
ID=250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
20  
V
VDS=20V, VGS=0V  
1
IDSS  
Zero Gate Voltage Drain Current  
µA  
5
TJ=55°C  
VDS=0V, VGS=±10V  
VDS=VGS，ID=250µA  
VGS=4.5V, VDS=5V  
VGS=4.5V, ID=6A  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
±10  
1.1  
µA  
V
VGS(th)  
ID(ON)  
0.5  
24  
0.85  
A
13.5  
17.5  
26  
22  
33  
24  
33  
mΩ  
TJ=125°C 20.5  
RDS(ON)  
Static Drain-Source On-Resistance  
VGS=4.0V, ID=5A  
14  
19  
18  
mΩ  
mΩ  
S
VGS=2.5V, ID=4A  
24  
VDS=5V, ID=6A  
IS=1A,VGS=0V  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
25  
0.65  
1
V
Maximum Body-Diode Continuous Current  
3.5  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
500  
100  
52  
pF  
pF  
pF  
kΩ  
VGS=0V, VDS=10V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
VGS=0V, VDS=0V, f=1MHz  
VGS=4.5V, VDS=10V, ID=6A  
VGS=5V, VDS=10V, RL=1.67Ω,  
2.6  
SWITCHING PARAMETERS  
Qg  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
6
2
9
nC  
nC  
nC  
us  
us  
us  
us  
1
0.2  
1.5  
7.4  
18  
RGEN=3Ω  
tD(off)  
tf  
trr  
IF=6A, dI/dt=100A/µs  
IF=6A, dI/dt=100A/µs  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
9
ns  
Qrr  
nC  
10  
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The  
value in any given application depends on the user's specific board design.  
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.  
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep  
initialTJ=25°C.  
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with  
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.  
G. The maximum current rating is package limited.  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
2 / 5  
www.freescale.net.cn  
AON3806  
20V Dual N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
30  
20  
10  
0
20  
4.5V  
2.5V  
VDS=5V  
4V  
15  
2V  
10  
5
125°C  
25°C  
VGS=1.5V  
4
0
0
0.5  
1
1.5  
2
2.5  
3
0
1
2
3
5
VGS(Volts)  
VDS (Volts)  
Fig 1: On-Region Characteristics (Note E)  
Figure 2: Transfer Characteristics (Note E)  
40  
35  
30  
25  
20  
15  
10  
5
1.8  
VGS=2.5V  
ID=4A  
1.6  
1.4  
1.2  
1
VGS=2.5V  
VGS=4.0V  
VGS=4.5V  
VGS=4.5V  
ID=6A  
VGS=4.0V  
ID=5A  
0.8  
0
0
25  
50  
75  
100  
125  
150  
175  
0
5
10  
ID (A)  
15  
20  
Temperature (°C)  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage (Note E)  
Figure 4: On-Resistance vs. Junction Temperature  
(Note E)  
60  
50  
40  
30  
20  
10  
1.0E+01  
ID=6A  
1.0E+00  
125°C  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
125°C  
25°C  
25°C  
0.0  
0.2  
0.4  
VSD (Volts)  
Figure 6: Body-Diode Characteristics (Note E)  
0.6  
0.8  
1.0  
0
2
4
6
8
10  
VGS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
(Note E)  
3 / 5  
www.freescale.net.cn  
AON3806  
20V Dual N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
5
800  
VDS=10V  
ID=6A  
4
Ciss  
600  
3
2
1
0
400  
200  
0
Coss  
Crss  
0
2
4
6
8
0
5
10  
15  
20  
Qg (nC)  
VDS (Volts)  
Figure 7: Gate-Charge Characteristics  
Figure 8: Capacitance Characteristics  
10000  
1000  
100  
10  
100.0  
10.0  
1.0  
TA=25°C  
10µs  
RDS(ON)  
limited  
100µs  
1ms  
10ms  
TJ(Max)=150°C  
TA=25°C  
10s  
DC  
0.1  
1
0.0  
1E-05  
0.001  
0.1  
10  
1000  
0.01  
0.1  
1
10  
100  
VDS (Volts)  
Pulse Width (s)  
Figure 10: Single Pulse Power Rating Junction-to-  
Ambient (Note F)  
Figure 9: Maximum Forward Biased  
Safe Operating Area (Note F)  
10  
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TA+PDM.ZθJA.RθJA  
RθJA=95°C/W  
1
0.1  
0.01  
PD  
Single Pulse  
0.001  
Ton  
T
0.001  
1E-05  
0.0001  
0.01  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)  
0.1  
1
10  
100  
1000  
4 / 5  
www.freescale.net.cn  
AON3806  
20V Dual N-Channel MOSFET  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Ig  
Charge  
Resistive Switching Test Circuit & W aveforms  
RL  
Vds  
Vds  
90%  
10%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
Vgs  
Vgs  
td(on)  
t
r
td(off)  
t
f
ton  
toff  
Diode Recovery Test Circuit & Waveforms  
Q rr = - Idt  
Vds +  
DUT  
Vgs  
trr  
Vds -  
L
Isd  
I F  
Isd  
Vgs  
dI/dt  
I RM  
+
Vdd  
VDC  
Vdd  
-
Vds  
Ig  
5 / 5  
www.freescale.net.cn  

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