AON3818 [AOS]
MOSFET 2N-CH 24V 8A;
| 型号： | AON3818 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | MOSFET 2N-CH 24V 8A |
| 文件： | 总5页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON3818
24V Dual N-Channel AlphaMOS
General Description
Product Summary
VDS
• Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
24V
8A
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS=4.0V)
RDS(ON) (at VGS=3.7V)
RDS(ON) (at VGS=3.1V)
RDS(ON) (at VGS=2.5V)
< 13.5mΩ
< 14mΩ
< 15mΩ
< 17mΩ
< 21mΩ
Typical ESD protection
HBM Class 2
Applications
• Battery protection switch
• Mobile device battery charging and discharging
DFN 3x3
D2
D1
Top View
Bottom View
Top View
D1/D2
D1/D2
S2
G2
S1
G1
1
2
3
4
8
G1
G2
7
6
5
D1/D2
D1/D2
S2
S1
Pin 1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON3818
DFN 3x3
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
24
V
V
VGS
±12
TA=25°C
TA=70°C
8
Continuous Drain
Current G
Pulsed Drain Current C
ID
6
32
A
IDM
TA=25°C
TA=70°C
2.7
PD
W
Power Dissipation B
1.7
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
45
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
35
60
15
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Steady-State
75
Steady-State
RθJL
20
Rev.1.0: May 2014
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Page 1 of 5
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
VDS=24V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
24
V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±10V
VDS=VGS, ID=250µA
VGS=4.5V, ID=8A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
±10
1.2
13.5
19
µA
V
VGS(th)
0.4
7.5
0.8
10.8
15
TJ=125°C 10.5
VGS=4.0V, ID=6A
7.8
8
11.2
11.5
12.5
14.8
42
14
RDS(ON)
Static Drain-Source On-Resistance
mΩ
VGS=3.7V, ID=6A
15
VGS=3.1V, ID=4A
VGS=2.5V, ID=4A
VDS=5V, ID=8A
IS=1A,VGS=0V
8
17
8.6
21
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.66
1
4
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
840
210
205
2
pF
pF
pF
kΩ
VGS=0V, VDS=12V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.5
1.5
4.5
0.3
0.8
1.7
5.2
15
nC
nC
nC
µs
µs
µs
µs
V
GS=4.5V, VDS=12V, ID=8A
Qgs
Qgd
tD(on)
tr
VGS=4.5V, VDS=12V, RL=1.5Ω,
RGEN=3Ω
tD(off)
tf
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2014
www.aosmd.com
Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
25
20
15
10
5
2.5V
3.1V
4.5V
VDS=5V
25
3.7V
2V
4V
20
15
10
125°C
5
25°C
VGS=1.5V
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
18
16
14
12
10
8
1.6
1.4
1.2
1
VGS=4.5V
ID=8A
VGS=2.5V
VGS=4V
ID=6A
VGS=2.5V
ID=4A
VGS=3.1V
VGS=3.7V
VGS=3.1V
ID=4A
VGS=3.7V
ID=6A
VGS=4.5V
VGS=4V
0.8
0
25
50
75
100
125
150
175
0
4
8
12
16
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
35
30
25
20
15
10
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=8A
125°C
125°C
25°C
25°C
0
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev.1.0: May 2014
www.aosmd.com
Page 3 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1200
VDS=12V
ID=8A
1000
800
600
400
200
0
Ciss
Coss
Crss
0
2
4
6
8
10
0
4
8
12
16
20
24
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
1000
100
10
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
DC
1
0.0
1E-05 0.0001 0.001 0.01 0.1
1
10
100
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
VGS> or equal to 2.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
PD
0.01
0.001
Single Pulse
0.01
Ton
T
1E-05
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: May 2014
www.aosmd.com
Page 4 of 5
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
IF
Isd
Vgs
dI/dt
IRM
+
Vdd
VDC
Vdd
-
Vds
Rev.1.0: May 2014
www.aosmd.com
Page 5 of 5
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