AON3814 [FREESCALE]
20V N-Channel MOSFET; 20V N沟道MOSFET型号: | AON3814 |
厂家: | Freescale |
描述: | 20V N-Channel MOSFET |
文件: | 总5页 (文件大小:401K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AON3814
20V N-Channel MOSFET
General Description
, low gate charge and operation
The AON3814 uses advanced trench technology to provide excellent RDS(ON)
with gate voltages as low as 1.8V while retaining a12V
for use as a uni-directional or bi-directional loadswitch,
VGS(MAX) rating. It is ESD protected. This device is suitable
facilitated by its common-drain configuration.
Features
VDS
20V
ID (at VGS=4.5V)
RDS(ON) (at VGS = 4.5V)
6A
< 17mΩ
< 18.5mΩ
< 23mΩ
< 24mΩ
RDS(ON) (at VGS = 4V)
RDS(ON) (at VGS = 3.1V)
RDS(ON) (at VGS = 2.5V)
ESD Protected
D2
D1
Top View
S2
G2
S1
G1
D2
D2
D1
D1
1
2
3
4
8
G1
G2
7
6
5
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
20
±12
V
V
VGS
TC=25°C
TC=70°C
6
Continuous Drain
Current F
ID
5.3
A
Pulsed Drain Current B
IDM
PD
40
TC=25°C
TC=70°C
2.5
W
°C
Power Dissipation F
1.6
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
50
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t
≤ 10s
40
75
30
RθJA
Steady-State
Steady-State
95
RθJL
40
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AON3814
20V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
20
V
VDS=20V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±10V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=6A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
µA
V
VGS(th)
ID(ON)
0.3
40
0.7
1.1
A
12.5
18.5
12.9
14
17
24
mΩ
TJ=125°C
VGS=4V, ID=6A
VGS=3.1V, ID=6A
VGS=2.5V, ID=6A
VGS=1.8V, ID=6A
VDS=5V, ID=6A
IS=1A,VGS=0V
18.5
23
mΩ
mΩ
mΩ
mΩ
S
RDS(ON)
Static Drain-Source On-Resistance
15.6
23
24
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
33
0.6
1
V
Maximum Body-Diode Continuous Current
3.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
730
110
45
920
155
75
1100
200
pF
pF
pF
kΩ
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
105
VGS=0V, VDS=0V, f=1MHz
2.4
SWITCHING PARAMETERS
Qg
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.8
1.6
1.9
11
2
13
2.4
4.5
nC
nC
nC
µs
µs
µs
µs
V
GS=4.5V, VDS=10V, ID=6A
Qgs
Qgd
tD(on)
tr
3.2
0.3
0.6
7.9
4.4
VGS=5V, VDS=10V, RL=1.7Ω,
GEN=3Ω
R
tD(off)
tf
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
F. The power dissipation and current rating is based on the t ≤ 10s thermal resistance, and current rating is also limited by wire-bonding.
2 / 5
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AON3814
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
20
10V
3V
4V
VDS=5V
15
10
5
2V
125°C
25°C
VGS=1.5V
4
0
0
0.5
1
1.5
2
2.5
0
1
2
3
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
1.8
1.6
1.4
1.2
1
30
VGS=1.8V
VGS=2.5V ID=6A
VGS=4V ID=6A
VGS=2.5V
25
20
15
10
5
VGS=4.5V ID=6A
VGS=3.1V
VGS=4.5V
0.8
0
25
50
75
100
125
150
175
0
5
10
ID (A)
15
20
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
40
35
30
25
20
15
10
5
1.0E+02
1.0E+01
ID=6A
1.0E+00
125°
125°
25°
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AON3814
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
1200
5
VDS=10V
4
3
2
1
0
ID=6A
Ciss
1000
800
600
Coss
400
200
Crss
0
0
2
4
6
8
10
12
14
0
5
10
VDS (Volts)
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
120
80
40
0
100.0
10.0
1.0
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
100µs
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
DC
0.0
0.01
0.1
1
10
100
0.0001 0.001
0.01
0.1
1
100
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
1
RθJA=95°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4 / 5
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AON3814
20V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
5 / 5
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