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AON3814_10 [AOS]

20V N-Channel MOSFET; 20V N沟道MOSFET
AON3814_10
型号： AON3814_10
厂家： ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述：

20V N-Channel MOSFET
20V N沟道MOSFET
文件： 总5页 (文件大小：375K)
中文：  中文翻译
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AON3814  
20V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
20V  
The AON3814 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and operation  
with gate voltages as low as 1.8V while retaining a 12V  
VGS(MAX) rating. It is ESD protected. This device is suitable  
for use as a uni-directional or bi-directional load switch,  
facilitated by its common-drain configuration.  
ID (at VGS=4.5V)  
RDS(ON) (at VGS = 4.5V)  
RDS(ON) (at VGS = 4V)  
RDS(ON) (at VGS = 3.1V)  
6A  
< 17mΩ  
< 18.5mΩ  
< 23mΩ  
< 24mΩ  
RDS(ON) (at VGS = 2.5V)  
ESD Protected  
DFN 3x3  
D2  
D1  
Top View  
Bottom View  
Top View  
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
1
2
3
4
8
G1  
G2  
7
6
5
S2  
S1  
Pin 1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
20  
±12  
V
V
VGS  
TC=25°C  
TC=70°C  
6
Continuous Drain  
Current F  
ID  
5.3  
A
Pulsed Drain Current B  
IDM  
PD  
40  
TC=25°C  
TC=70°C  
2.5  
W
°C  
Power Dissipation F  
1.6  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
t
≤ 10s  
40  
75  
30  
50  
95  
40  
RθJA  
Steady-State  
Steady-State  
RθJL  
Rev 5:July 2010  
www.aosmd.com  
Page 1 of 5  
AON3814  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
ID=250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
20  
V
VDS=20V, VGS=0V  
1
IDSS  
Zero Gate Voltage Drain Current  
µA  
5
TJ=55°C  
VDS=0V, VGS= ±10V  
VDS=VGS ID=250µA  
VGS=4.5V, VDS=5V  
VGS=4.5V, ID=6A  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
10  
µA  
V
VGS(th)  
ID(ON)  
0.3  
40  
0.7  
1.1  
A
12.5  
18.5  
12.9  
14  
17  
24  
mΩ  
TJ=125°C  
VGS=4V, ID=6A  
VGS=3.1V, ID=6A  
VGS=2.5V, ID=6A  
VGS=1.8V, ID=6A  
VDS=5V, ID=6A  
IS=1A,VGS=0V  
18.5  
23  
mΩ  
mΩ  
mΩ  
mΩ  
S
RDS(ON)  
Static Drain-Source On-Resistance  
15.6  
23  
24  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
33  
0.6  
1
V
Maximum Body-Diode Continuous Current  
3.5  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
730  
110  
45  
920  
155  
75  
1100  
200  
pF  
pF  
pF  
kΩ  
VGS=0V, VDS=10V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
105  
VGS=0V, VDS=0V, f=1MHz  
2.4  
SWITCHING PARAMETERS  
Qg  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
8.8  
1.6  
1.9  
11  
2
13  
2.4  
4.5  
nC  
nC  
nC  
µs  
µs  
µs  
µs  
V
GS=4.5V, VDS=10V, ID=6A  
Qgs  
Qgd  
tD(on)  
tr  
3.2  
0.3  
0.6  
7.9  
4.4  
VGS=5V, VDS=10V, RL=1.7Ω,  
GEN=3Ω  
R
tD(off)  
tf  
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The  
value in any given application depends on the user's specific board design.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with  
T A=25°C. The SOA curve provides a single pulse rating.  
F. The power dissipation and current rating is based on the t ≤ 10s thermal resistance, and current rating is also limited by wire-bonding.  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Rev 5: July 2010  
www.aosmd.com  
Page 2 of 5  
AON3814  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
40  
30  
20  
10  
0
20  
15  
10  
5
10V  
3V  
4V  
VDS=5V  
2V  
125°C  
25°C  
VGS=1.5V  
4
0
0
0.5  
1
1.5  
2
2.5  
0
1
2
3
5
VGS(Volts)  
VDS (Volts)  
Fig 1: On-Region Characteristics (Note E)  
Figure 2: Transfer Characteristics (Note E)  
1.8  
1.6  
1.4  
1.2  
1
30  
VGS=1.8V  
VGS=2.5V ID=6A  
VGS=4V ID=6A  
VGS=2.5V  
25  
20  
15  
10  
5
VGS=4.5V ID=6A  
VGS=3.1V  
VGS=4.5V  
0.8  
0
25  
50  
75  
100  
125  
150  
175  
0
5
10  
ID (A)  
15  
20  
Temperature (°C)  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage (Note E)  
Figure 4: On-Resistance vs. Junction Temperature  
(Note E)  
40  
35  
30  
25  
20  
15  
10  
5
1.0E+02  
1.0E+01  
ID=6A  
1.0E+00  
125°  
125°  
25°  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
25°  
0.0  
0.2  
0.4  
VSD (Volts)  
Figure 6: Body-Diode Characteristics (Note E)  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
VGS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
(Note E)  
Rev 5: July 2010  
www.aosmd.com  
Page 3 of 5  
AON3814  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
1400  
5
4
3
2
1
0
1200  
1000  
800  
600  
400  
200  
0
VDS=10V  
ID=6A  
Ciss  
Coss  
Crss  
0
2
4
6
8
10  
12  
14  
0
5
10  
15  
20  
Qg (nC)  
VDS (Volts)  
Figure 7: Gate-Charge Characteristics  
Figure 8: Capacitance Characteristics  
120  
80  
40  
0
100.0  
10.0  
1.0  
TJ(Max)=150°C  
TA=25°C  
10µs  
RDS(ON)  
100µs  
1ms  
10ms  
0.1  
TJ(Max)=150°C  
TA=25°C  
DC  
0.0  
0.01  
0.1  
1
10  
100  
0.0001 0.001  
0.01  
0.1  
1
100  
10
VDS (Volts)  
Pulse Width (s)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note F)  
Figure 10: Single Pulse Power Rating Junction-to-  
Case (Note F)  
10  
In descending order  
D=Ton/T  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TC+PDM.ZθJC.RθJC  
1
RθJA=95°C/W  
0.1  
0.01  
PD  
Single Pulse  
Ton  
T
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)  
Rev 5: July 2010  
www.aosmd.com  
Page 4 of 5  
AON3814  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Ig  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
Vds  
Vds  
90%  
10%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
Vgs  
Vgs  
td(on)  
t
r
td(off)  
t
f
ton  
toff  
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  
L
EAR= 1/2 LIA2R  
BVDSS  
Vds  
Id  
Vgs  
Vds  
+
Vgs  
Vdd  
I AR  
VDC  
Id  
Rg  
-
DUT  
Vgs  
Vgs  
Diode Recovery Test Circuit & Waveforms  
Qrr = - Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
trr  
L
Isd  
I F  
Isd  
Vgs  
dI/dt  
I RM  
+
Vdd  
VDC  
Vdd  
-
Vds  
Rev 5: July 2010  
www.aosmd.com  
Page 5 of 5  

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