AON3816 [AOS]
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor; 常见的漏双N沟道增强型场效应晶体管
| 型号： | AON3816 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON3816
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
Features
The AON3816/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It is ESD
protected. This device is suitable for use as a uni-
directional or bi-directional load switch, facilitated by
its common-drain configuration. AON3816 and
AO3816L are electrically identical.
VDS (V) = 20V
ID = 4A (VGS = 4.5V)
RDS(ON) < 22mΩ (VGS = 4.5V)
R
R
DS(ON) < 23mΩ (VGS = 4V)
DS(ON) < 28mΩ (VGS = 2.5V)
ESD Protected
-RoHS Compliant
-AO3816L is Halogen Free
D2
D1
DFN 3x3
Top View
Bottom View
G1
G2
D2
S2
G2
S1
D2
D1
D1
G1
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
10 Sec
Steady State
20
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A F
V
V
VGS
±12
TA=25°C
TA=70°C
4
4
4
4
A
ID
Pulsed Drain Current B
IDM
20
TA=25°C
TA=70°C
2.4
1.5
1.4
0.9
PD
W
Power Dissipation A
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Symbol
Typ
43
80
Max
52
90
Units
°C/W
°C/W
°C/W
A
t ≤ 10s
RθJA
A
Steady State
Maximum Junction-to-Ambient
C
Steady State
RθJL
Maximum Junction-to-Lead
33
50
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3816
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
V
DS=20V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
VDS=0V, VGS=±10V
10
BVGSO
VGS(th)
ID(ON)
VDS=0V, IG=±250µA
±12
0.4
20
V
V
A
VDS=VGS ID=250µA
GS=4.5V, VDS=5V
0.75
1.1
On state drain current
V
VGS=4.5V, ID=4A
14
18
23
22
29
23
28
mΩ
TJ=125°C
18
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=4V, ID=4A
VGS=2.5V, ID=4A
VDS=5V, ID=4A
IS=1A,VGS=0V
15
19
17
22.5
21
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.75
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1315
219
183
2.1
pF
pF
V
GS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
pF
kΩ
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=4A
SWITCHING PARAMETERS
Qg
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
15
6.7
4.6
1
nC
nC
Qgs
Qgd
tD(on)
tr
nC
µs
µs
µs
µs
2.8
5.6
5.9
VGS=5V, VDS=10V, RL=2.5Ω,
R
GEN=3Ω
tD(off)
tf
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
F. The continuous current rating is limited by wire-bonding.
Rev 2: Feb 15. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
20
10
0
10V
4V
VDS=5V
VGS =2V
15
10
5
2.5V
125°C
25°C
VGS =1.5V
-40°C
0
0
1
2
3
4
5
0.0
0.5
1.0
GS(Volts)
Figure 2: Transfer Characteristics
1.5
2.0
2.5
V
DS(Volts)
V
Figure 1: On-Regions Characteristics
35
30
25
20
15
10
1.6
1.4
1.2
1.0
0.8
VGS=2.5V
VGS=4V
ID=4A
VGS =2.5V
VGS =4V
VGS=4.5V
VGS =4.5V
0
5
10
15
20
-50 -25
0
25 50 75 100 125 150 175
ID(A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
30
25
20
15
10
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
ID=4A
125°C
-40°C
125°C
25°C
25°C
0.0
0.2
0.4
VSD(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
10
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
5
VDS=10V
ID=4A
2000
4
3
2
1
0
Coss
1500
1000
500
0
Ciss
Crss
0
5
10
15
20
0
5
10
15
20
VDS(Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
40
TJ(Max)=150°C
TA=25°C
10µs
30
20
10
0
RDS(ON)
100µ
1ms
10ms
DC
0.1s
1s
0.1
TJ(Max)=150°C
TA=25°C
10s
0.0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
DS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
P
0.1
0.01
Ton
T
single pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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