AON3814 [AOS]
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor; 常见的漏双N沟道增强型场效应晶体管
| 型号： | AON3814 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON3814
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
Features
The AON3814 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration. Standard Product AON3814 is
Pb-free (meets ROHS & Sony 259 specifications).
VDS (V) = 20V
ID = 6A (VGS = 4.5V)
R
DS(ON) < 17mΩ (VGS = 4.5V)
DS(ON) < 18.5mΩ (VGS = 4V)
R
RDS(ON) < 24mΩ (VGS = 2.5V)
DS(ON) < 39mΩ (VGS = 1.8V)
R
ESD Protected
DFN 3x3
D2
D1
Top View
Bottom View
D
S
S
S
D
G1
G2
D
D
G
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
Continuous Drain
Current F
±12
V
A
TA=25°C
TA=70°C
6
5.3
ID
Pulsed Drain Current B
IDM
30
TA=25°C
TA=70°C
2.4
PD
W
Power Dissipation F
1.5
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
43
Max
52
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
75
90
RθJL
36
50
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3814
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
V
DS=20V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
VDS=0V, VGS=±10V
10
BVGSO
VGS(th)
ID(ON)
VDS=0V, IG=±250µA
VDS=VGS ID=250µA
±12
0.4
30
V
V
A
0.71
1.1
On state drain current
VGS=4.5V, VDS=5V
VGS=4.5V, ID=6A
11
14
19
17
24
mΩ
mΩ
TJ=125°C
15
RDS(ON)
Static Drain-Source On-Resistance
VGS=4V, ID=6A
11.5
14.5
23
15
18.5
24
VGS=2.5V, ID=6A
19
mΩ
VGS=1.8V, ID=6A
30
39
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=6A
IS=1A,VGS=0V
25
S
V
A
0.75
1
Maximum Body-Diode Continuous Current
3.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1315
219
183
2.1
pF
pF
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
pF
kΩ
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
13.1
6.7
4.6
1
nC
nC
Qgs
Qgd
tD(on)
tr
V
GS=4.5V, VDS=10V, ID=6A
nC
µs
µs
µs
µs
2.8
5.6
5.9
VGS=5V, VDS=10V, RL=1.7Ω,
R
GEN=3Ω
tD(off)
tf
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
F. The power dissipation and current rating is based on the t ≤ 10s thermal resistance, and current rating is also limited by wire-bonding.
Rev 2:Sep 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3814
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
20
10
0
10V
4V
VDS=5V
VGS =2V
15
10
5
3V
125°C
25°C
VGS =1.5V
-40°C
0
0
1
2
3
4
5
0.0
0.5
1.0
GS(Volts)
Figure 2: Transfer Characteristics
1.5
2.0
2.5
V
DS(Volts)
V
Figure 1: On-Regions Characteristics
40
35
30
25
20
15
10
5
1.6
1.4
1.2
1.0
0.8
VGS =1.8V
VGS=2.5V
ID=6A
VGS=4V
VGS=4.5V
VGS =2.5V
VGS=1.8V
VGS =4V
VGS =4.5V
0
5
10
15
20
-50 -25
0
25 50 75 100 125 150 175
ID(A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
30
25
20
15
10
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
ID=6A
125°C
-40°C
125°C
25°C
25°C
0.0
0.2
0.4
VSD(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
10
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3814
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
5
VDS=10V
ID=6A
2000
4
3
2
1
0
Coss
1500
1000
500
0
Ciss
Crss
0
5
10
15
20
0
5
10
15
20
VDS(Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.00
10.00
1.00
40
10µs
TJ(Max)=150°C
TA=25°C
30
20
10
0
100µs
1ms
RDS(ON)
limited
10ms
0.1s
1s
10s
DC
0.10
TJ(Max)=150°C
TA=25°C
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=52°C/W
P
0.1
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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