AON3812L [AOS]
Transistor;
| 型号： | AON3812L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor 晶体 晶体管 场效应晶体管 |
| 文件： | 总4页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON3812
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
Features
The AON3812 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V while retaining a 12V
VGS(MAX) rating. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load
switch, facilitated by its common-drain configuration.
Standard Product AON3812 is Pb-free (meets ROHS &
Sony 259 specifications).
VDS (V) = 30V
ID = 6A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 30mΩ (VGS = 4.5V)
RDS(ON) < 40mΩ (VGS = 2.5V)
D2
D1
DFN 3x3
Top View
Bottom View
1.6KΩ
1.6KΩ
D2
D2
S2
G2
S1
G1
G1
G2
D1
D1
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
±12
V
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
TA=25°C F
TA=70°C
6
ID
5.3
A
Pulsed Drain Current B
IDM
30
TA=25°C
TA=70°C
2.2
PD
W
Power Dissipation A
1.4
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
43
Max
56
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
77
95
Steady-State
Steady-State
RθJL
35
50
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3812
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
V
DS=0V, VGS=±10V
DS=0V, IG=±250uA
10
BVGSO
VGS(th)
ID(ON)
V
±12
0.6
30
V
V
A
VDS=VGS ID=250µA
0.8
1.5
27
On state drain current
VGS=4.5V, VDS=5V
VGS=10V, ID=6A
22
31
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.4A
VDS=5V, ID=6A
IS=1A,VGS=0V
25
30
40
33
gFS
VSD
IS
Forward Transconductance
24
S
V
A
Diode Forward Voltage
0.76
1
Maximum Body-Diode Continuous Current
2.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
330
80
400
pF
pF
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
10
pF
kΩ
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=6A
1.6
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6.4
3.1
2.5
388
992
2.7
1.9
nC
nC
nC
ns
ns
VGS=4.5V, VDS=15V, RL=2.5Ω,
µs
R
GEN=3Ω
tD(off)
tf
µs
trr
IF=6A, dI/dt=100A/µs, VGS=-9V
IF=6A, dI/dt=100A/µs, VGS=-9V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
26.5
30.8
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
F. The max current rating is limited by bonding wires.
Rev 1: Feb 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3812
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
20
10
0
VDS=5V
10V
3.5V
25
20
15
10
5
2.5V
125°C
25°C
VGS =2V
-40°C
2.0
0
0
1
2
3
DS(Volts)
4
5
0.0
0.5
1.0
1.5
2.5
3.0
V
V
GS(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristics
50
40
30
20
10
0
1.6
1.4
1.2
1.0
0.8
0.6
VGS =2.5V
VGS=4.5V
ID=6A
VGS=2.5V
ID=5.4
VGS =4.5V
VGS =10V
VGS=10V
ID=6A
0
5
10
15
20
ID(A)
-50 -25
0
25
50
75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
60
50
40
30
20
10
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
ID=6A
125°C
125°C
25°C
-40°C
25°C
0.0
0.2
0.4
VSD(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
10
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3812
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
5
Ciss
VDS=15V
ID=6A
350
300
250
200
150
100
50
4
3
2
1
0
Coss
Crss
0
0
5
10
15
20
25
30
0
2
4
6
8
VDS(Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
10
1
TJ(Max)=150°C, TA=25°C
80
TJ(Max)=150°C
TA=25°C
70
60
50
40
30
20
10
0
10µs
100µs
1ms
100m
10s
RDS(ON)
limited
DC
10ms
0.1
0.0001 0.001
0.01
0.1
1
10
100
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=56°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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