AON3806L [AOS]
Transistor;
| 型号： | AON3806L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON3806
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
Features
The AON3806/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration. AON3806 and AON3806L are
electrically identical.
VDS (V) = 20V
ID =6.8 A (VGS = 4.5V)
R
DS(ON) < 26mΩ (VGS = 4.5V)
RDS(ON) < 27mΩ (VGS = 4V)
DS(ON) < 35mΩ (VGS = 2.5V)
R
ESD Protected
-RoHS Compliant
-AO3806L is Halogen Free
DFN 3x3
D1
D2
Top View
Bottom View
D2
D2
S2
G2
S1
G1
G2
D1
D1
G1
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±12
6.8
V
A
TA=25°C
TA=70°C
ID
5.4
Pulsed Drain Current B
IDM
40
TA=25°C
TA=70°C
1.9
PD
W
Power Dissipation A
1.2
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
55
Max
65
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
78
95
RθJL
30
50
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3806
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
V
DS=16V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
VDS=0V, VGS=±10V
DS=0V, IG=±250uA
10
BVGSO
VGS(th)
ID(ON)
V
±12
0.5
40
V
V
A
VDS=VGS ID=250µA
0.7
1
On state drain current
VGS=4.5V, VDS=5V
V
GS=4.5V, ID=6.8A
16
21
29
26
35
27
35
mΩ
TJ=125°C
22
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
V
V
GS=4V, ID=6A
17
22
GS=2.5V, ID=5A
22
28
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=6.8A
IS=1A,VGS=0V
25
S
V
A
0.75
1
Maximum Body-Diode Continuous Current
2.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
615
150
120
1.2
pF
pF
pF
Ω
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
8.5
1.2
3
nC
nC
nC
ns
ns
ns
ns
ns
nC
VGS=4.5V, VDS=10V, ID=6.8A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
7
Turn-On Rise Time
VGS=5V, VDS=10V, RL=1.4Ω,
RGEN=3Ω
13
29
11
15
5
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
trr
IF=6.8A, dI/dt=100A/µs
IF=6.8A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Qrr
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 5: Feb. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3806
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
40
10V
3V
VDS=5V
VGS =2.5V
VGS =2V
30
20
10
0
4.5V
125°C
1.0
VGS =1.5V
4
25°C
1.5
0
0
1
2
3
5
0.0
0.5
2.0
2.5
VDS(Volts)
VGS(Volts)
Figure 1: On-Regions Characteristics
Figure 2: Transfer Characteristics
35
30
25
20
15
1.6
1.4
1.2
1.0
0.8
VGS=2.5V
ID=5A
VGS =2.5V
VGS=4.5V
ID=6.8A
VGS =4.5V
0
5
10
15
20
0
25
50
75
100
125
150
175
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
60
50
40
30
20
10
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
ID=6.8A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
VSD(Volts)
VGS(Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3806
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
900
600
300
0
5
VDS=10V
ID=6.8A
4
3
2
1
0
Ciss
Coss
Crss
0
5
10
DS(Volts)
15
20
0
2
4
6
8
10
V
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
TJ(Max)=150°C, TA=25°C
20
15
10
5
TJ(Max)=150°C
TA=25°C
10
1
10µs
100µs
1ms
10ms
RDS(ON)
limited
DC
100m
1s
10s
0
0.001
0.01
0.1
1
10
100
1000
0.1
Pulse Width (s)
0.1
1
10
100
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
P
0.1
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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