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AO4800B [FREESCALE]

30V Dual N-Channel MOSFET; 30V双N沟道MOSFET
AO4800B
型号： AO4800B
厂家： Freescale    Freescale
描述：

30V Dual N-Channel MOSFET
30V双N沟道MOSFET

晶体 晶体管 开关 光电二极管
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AO4800B  
30V Dual N-Channel MOSFET  
General Description  
provide excellent R  
The AO4800B uses advanced trench technology to  
MOSFETs make a compact and efficient switch and  
converters.  
DS(ON) and low gate charge. The two  
synchronous rectifier combination for use in buck  
Features  
VDS  
30V  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
6.9A  
< 27mΩ  
< 32mΩ  
< 50mΩ  
RDS(ON) (at VGS = 4.5V)  
RDS(ON) (at VGS = 2.5V)  
D1  
D1  
Top View  
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
1
2
3
4
8
7
6
5
G2  
G1  
S1  
S2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±12  
TA=25°C  
TA=70°C  
6.9  
Continuous Drain  
Current  
ID  
5.8  
A
Pulsed Drain Current C  
IDM  
30  
Avalanche Current C  
IAS, IAR  
EAS, EAR  
14  
A
Avalanche energy L=0.1mH C  
TA=25°C  
Power Dissipation B  
10  
2
mJ  
PD  
W
°C  
TA=70°C  
1.3  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
48  
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
≤ 10s  
62.5  
90  
RθJA  
Steady-State  
Steady-State  
74  
RθJL  
32  
40  
1/6  
www.freescale.net.cn  
AO4800B  
30V Dual N-Channel MOSFET  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
ID=250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
30  
V
VDS=30V, VGS=0V  
1
IDSS  
Zero Gate Voltage Drain Current  
µA  
5
TJ=55°C  
VDS=0V, VGS= ±12V  
VDS=VGS ID=250µA  
VGS=4.5V, VDS=5V  
VGS=10V, ID=6.9A  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
100  
1.5  
nA  
V
VGS(th)  
ID(ON)  
0.7  
30  
1.1  
A
17.8  
28  
27  
40  
32  
50  
mΩ  
TJ=125°C  
RDS(ON)  
Static Drain-Source On-Resistance  
VGS=4.5V, ID=6A  
VGS=2.5V, ID=5A  
VDS=5V, ID=5A  
IS=1A,VGS=0V  
19  
mΩ  
mΩ  
S
24  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
33  
0.7  
1
V
Maximum Body-Diode Continuous Current  
2.5  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
630  
75  
50  
3
pF  
pF  
pF  
Ω
VGS=0V, VDS=15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
VGS=0V, VDS=0V, f=1MHz  
1.5  
4.5  
7
SWITCHING PARAMETERS  
Qg  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
6
1.3  
1.8  
3
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VGS=4.5V, VDS=15V, ID=6.9A  
VGS=10V, VDS=15V, RL=2.2Ω,  
RGEN=3Ω  
2.5  
25  
4
tD(off)  
tf  
trr  
IF=6.9A, dI/dt=100A/µs  
IF=6.9A, dI/dt=100A/µs  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
8.5  
2.6  
ns  
Qrr  
nC  
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The  
value in any given application depends on the user's specific board design.  
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.  
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep  
initialTJ=25°C.  
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with  
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.  
2/6  
www.freescale.net.cn  
AO4800B  
30V Dual N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
40  
35  
30  
25  
20  
15  
10  
5
15  
12  
9
10V  
3V  
VDS=5V  
4.5V  
2.5V  
6
25°C  
3
125°C  
VGS=2V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
0
1
2
3
4
5
VGS(Volts)  
VDS (Volts)  
Fig 1: On-Region Characteristics (Note E)  
Figure 2: Transfer Characteristics (Note E)  
30  
1.8  
1.6  
1.4  
1.2  
1
VGS=4.5V  
ID=6A  
25  
20  
15  
10  
VGS=4.5V  
VGS=10V  
ID=6.9A  
VGS=10V  
0.8  
0
25  
50  
75  
100  
125  
150  
175  
0
5
10  
ID (A)  
15  
20  
Temperature (°C)  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage (Note E)  
Figure 4: On-Resistance vs. Junction Temperature  
(Note E)  
50  
40  
30  
20  
10  
1.0E+01  
1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
ID=6.9A  
125°C  
125°C  
25°C  
25°C  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0
2
4
6
8
10  
VGS (Volts)  
VSD (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
(Note E)  
Figure 6: Body-Diode Characteristics (Note E)  
3/6  
www.freescale.net.cn  
AO4800B  
30V Dual N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
5
4
3
2
1
0
1000  
800  
600  
400  
200  
0
VDS=15V  
ID=6.9A  
Ciss  
Coss  
Crss  
0
5
10  
15  
20  
25  
30  
0
2
4
6
8
VDS (Volts)  
Qg (nC)  
Figure 8: Capacitance Characteristics  
Figure 7: Gate-Charge Characteristics  
100.0  
100.0  
TA=25°C  
TA=100°C  
TA=150°C  
10µs  
10.0  
1.0  
RDS(ON)  
limited  
100µs  
1ms  
10.0  
10ms  
TA=125°C  
DC  
0.1  
10s  
TJ(Max)=150°C  
TA=25°C  
0.0  
1.0  
0.01  
0.1  
1
10  
100  
1
10  
Time in avalanche, tA (µs)  
Figure 9: Single Pulse Avalanche capability (Note C)  
100  
1000  
VDS (Volts)  
Figure 10: Maximum Forward Biased Safe  
Operating Area (Note F)  
10000  
1000  
100  
10  
TA=25°C  
1
0.00001  
0.001  
0.1  
Pulse Width (s)  
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)  
10  
1000  
4/6  
www.freescale.net.cn  
AO4800B  
30V Dual N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
10  
In descending order  
D=Ton/T  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TA+PDM.ZθJA.RθJA  
1
RθJA=90°C/W  
0.1  
PD  
0.01  
Single Pulse  
0.001  
Ton  
T
0.001  
0.00001  
0.0001  
0.01  
Pulse Width (s)  
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)  
0.1  
1
10  
100  
1000  
5/6  
www.freescale.net.cn  
AO4800B  
30V Dual N-Channel MOSFET  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Ig  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
Vds  
Vds  
90%  
10%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
Vgs  
Vgs  
td(on)  
t
r
td(off)  
t
f
ton  
toff  
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  
L
EAR= 1/2 LIA2R  
BVDSS  
Vds  
Id  
Vgs  
Vds  
+
Vgs  
Vdd  
I AR  
VDC  
Id  
Rg  
-
DUT  
Vgs  
Vgs  
Diode Recovery Test Circuit & Waveforms  
Q rr = - Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
trr  
L
Isd  
I F  
Isd  
Vgs  
dI/dt  
I RM  
+
Vdd  
VDC  
Vdd  
-
Vds  
6/6  
www.freescale.net.cn  

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