AO4801 [FREESCALE]
P-Channel 20-V (D-S) MOSFET High performance trench technology; P通道20 -V （ DS ） MOSFET高性能沟道技术
| 型号： | AO4801 |
| 厂家： | 
Freescale |
| 描述： | P-Channel 20-V (D-S) MOSFET High performance trench technology |
| 文件： | 总5页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AO4801/MC4801
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
-4.9
52 @ VGS = -4.5V
89 @ VGS = -2.5V
124 @ Vgs = -1.8V
-20
-4.0
-3.6
1
2
8
7
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
3
6
5
•
•
Fast switching speed
4
High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-20
12
V
TA=25oC
TA=70oC
-5.2
-4.1
50
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
IDM
IS
Continuous Source Current (Diode Conduction)a
-2.1
2.1
1.3
A
W
oC
TA=25oC
TA=70oC
Power Dissipationa
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJC
Maximum
Units
oC/W
oC/W
Maximum Junction-to-Casea
Maximum Junction-to-Ambienta
t <= 5 sec
t <= 5 sec
40
60
RθJA
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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AO4801/MC4801
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Min Typ Max
Parameter
Symbol
Test Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = -250 uA
-0.7
nA
uA
VDS = 0 V, VGS
=
12 V
100
-1
V
DS = -16 V, VGS = 0 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain CurrentA
VDS = -16 V, VGS = 0 V, TJ = 55oC
-5
ID(on)
VDS = -4.5 V, VGS = -10 V
VGS = -4.5 V, ID = -4.9 A
VGS = -2.5 V, ID = -4.0 A
VGS = -1.8 V, ID = -3.6 A
-20
A
52
89
Drain-Source On-ResistanceA
rDS(on)
mꢀ
124
Forward TranconductanceA
Diode Forward Voltage
gfs
VDS = -15 V, ID = -4.9 A
IS = 2.5 A, VGS = 0 V
20
S
VSD
-0.6
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
16.7
1.8
1.9
7
VDS = -10 V, VGS = -4.5 V,
ID = -4.9 A
nC
nS
VDD = -10 V, RL = 6 ꢀ , ID = -1 A,
13
14
9
VGEN = -4.5 V
Turn-Off Delay Time
Fall-Time
td(off)
tf
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
e to any products herein. freescalemakes no warranty, representation
reserves the right to make changes without further notic
FREESCALE
t of the application or
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheet s and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
under its patent rights nor the
are not designed,
rights of others. freescale products
customer’s technical experts. freescaledoes not convey any license
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int
sustain life, or for any other application in which the failure of the freescale product could create a situation where personal inju
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale
and its
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AO4801/MC4801
Typical Electrical Characteristics (P-Channel)
20
15
10
5
VGS = -4.5V
-3.0V
TA = -55oC
-2.5V
25oC
15
10
5
-2.0V
125oC
0
0
0
1
2
3
4
0.5
1
1.5
2
2.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.6
1500
CISS
1200
900
600
300
0
1.4
1.2
1
VGS = -2.5V
COSS
-4.5V
CRSS
0.8
0
5
10
15
20
0
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DIRAIN CURRENT (A)
Figure 3. On-Resistance vs. Drain Current
Figure 4. Capacitance
-10
1.6
1.4
1.2
1
VGS = -4.5V
-8
-6
-4
-2
0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0
4
8
12
16
20
TJ, JUNCTION TEMPERATURE (oC)
Qg, Charge (nC)
Figure 5. Gate Charge
Figure 6. On-Resistance vs. Junction Temperature
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AO4801/MC4801
Typical Electrical Characteristics (P-Channel)
100
10
0.15
0.12
0.09
0.06
0.03
0
TA = 125oC
1
0.1
25oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1
2
3
4
5
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Source-Drain Diode Forward Voltage
Figure 8. On-Resistance with Gate to Source Voltage
50
SINGLE PULSE
RqJA = 125oC/W
1.2
1
TA = 25oC
40
ID = -250
A
µ
30
20
10
0
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
100
TA, AMBIENT TEMPERATURE (oC)
t1, TIME (SEC)
Figure 9. Vth Gate to Source Voltage Vs Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
D = 0.5
RqJ A(t) = r(t) +RqJA
RqJ A = 125 /W
0.2
0.1
癈
0.1
0.0
P (pk)
0.02
0.01
t1
t2
0.01
0.001
TJ - TA = P *RqJA(t)
Duty Cycle, D = t1/ t2
SINGLE P ULSE
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (s ec)
Figure 11. Transient Thermal Response Curve
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Freescale
AO4801/MC4801
Package Information
SO-8: 8LEAD
H x 45°
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