AO4803A_11 [AOS]
30V Dual P-Channel MOSFET; 双路30V P沟道MOSFET
| 型号： | AO4803A_11 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V Dual P-Channel MOSFET |
| 文件： | 总6页 (文件大小：614K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4803A
30V Dual P-Channel MOSFET
General Description
Product Summary
VDS
-30V
The AO4803A uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
-5A
< 46mΩ
< 74mΩ
R
DS(ON) (at VGS = -4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
D
D
Top View
Bottom View
Top View
S2
G2
S1
G1
D2
D2
D1
D1
1
2
3
4
8
7
6
5
G1
G2
S1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
-30
±20
-5
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current
ID
-4
A
Pulsed Drain Current C
IDM
-30
Avalanche Current C
IAS, IAR
EAS, EAR
17
A
Avalanche energy L=0.1mH C
TA=25°C
Power Dissipation B
14
2
mJ
PD
W
°C
TA=70°C
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
48
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Steady-State
Steady-State
74
RθJL
35
Rev 2: Nov 2011
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Page 1 of 6
AO4803A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-5A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-2.5
nA
V
VGS(th)
ID(ON)
-1.5
-30
-2
A
32
48
46
68
74
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-4A
VDS=-5V, ID=-5A
IS=-1A,VGS=0V
51
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
13
-0.7
-1
V
Maximum Body-Diode Continuous Current
-2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
520
100
65
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
3.5
7.5
11.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.2
4.6
1.6
2.2
7.5
5.5
19
11
6
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=-10V, VDS=-15V, ID=-5A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
7
ns
trr
IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
11
ns
Qrr
nC
5.3
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Nov 2011
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Page 2 of 6
AO4803A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
40
35
30
25
20
15
10
5
-10V
-8V
VDS=-5V
-6V
-5V
VGS=-4.5V
-4V
125°C
25°C
VGS=-3.5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0
1
2
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
80
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-5A
70
60
50
40
30
20
10
VGS=-4.5V
VGS
=-4.5V
ID=-4A
VGS=-10V
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. JunctionTemperature
(Note E)
120
100
80
1.0E+02
1.0E+01
ID=-5A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
125°C
25°C
60
40
20
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Nov 2011
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Page 3 of 6
AO4803A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=110°C/W
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Nov 2011
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Page 4 of 6
AO4803A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
700
600
500
400
300
200
100
0
VDS=-15V
ID=-5A
8
Ciss
6
4
Coss
2
Crss
0
0
2
4
6
8
10
0
5
10
15
20
25
30
Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
100.0
10.0
1.0
TA=25°C
TA=100°C
10µs
TA=150°C
RDS(ON)
limited
TA=125°C
100µs
1ms
10ms
0.1
DC
10s
TJ(Max)=150°C
TA=25°C
0.0
0.01
0.1
1
10
100
1
10
Time in avalanche, tA (µs)
Figure 9: Single Pulse Avalanche capability (Note C)
100
1000
-VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
1000
100
10
TA=25°C
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 2: Nov 2011
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Page 5 of 6
AO4803A
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDCC
Qgs
Qgd
+
Vds
VDCC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 2: Nov 2011
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Page 6 of 6
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