AO4803L [AOS]
Dual P-Channel Enhancement Mode Field Effect Transistor; 双P沟道增强型场效应晶体管
| 型号： | AO4803L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4803
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4803 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4803 is Pb-free
(meets ROHS & Sony 259 specifications). AO4803L
is a Green Product ordering option. AO4803 and
AO4803L are electrically identical.
VDS (V) = -30V
ID = -5 A (VGS = -10V)
R
DS(ON) < 52mΩ (VGS = -10V)
DS(ON) < 87mΩ (VGS = -4.5V)
R
SOIC-8
Top View
D1
S1
D2
S2
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±20
V
A
TA=25°C
TA=70°C
-5
-4.2
ID
Pulsed Drain Current B
IDM
-20
TA=25°C
TA=70°C
2
PD
W
Power Dissipation A
1.4
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
48
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
74
RθJL
35
Alpha & Omega Semiconductor, Ltd.
AO4803
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
V
DS=-24V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=5.0A
±100
-3
nA
V
VGS(th)
ID(ON)
-1
-1.8
-20
A
39
54
52
70
87
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
S
V
V
GS=-4.5V, ID=-4A
DS=-5V, ID=-5A
67
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
6
8.6
-0.77
IS=-1A,VGS=0V
-1
V
Maximum Body-Diode Continuous Current
-2.8
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
700
120
75
pF
pF
pF
Ω
V
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
GS=0V, VDS=0V, f=1MHz
10
SWITCHING PARAMETERS
Qg (10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
14.7
7.6
2
nC
nC
nC
nC
ns
Qg (4.5V)
V
GS=-10V, VDS=-15V, ID=-5A
Qgs
Qgd
tD(on)
tr
3.8
8.3
5
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=3Ω
ns
tD(off)
tf
29
ns
14
ns
trr
IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs
23.5
13.4
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev5: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
20
15
10
5
-5V
-10V
-6V
VDS=-5V
-4.5V
-4V
6
-3.5V
4
125°C
VGS=-3V
2
25°C
-2.5V
4.00
0
0
0.00
1.00
2.00
3.00
5.00
0
1
2
-VGS(Volts)
3
4
-VDS (Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
100
80
60
40
20
1.60E+00
1.40E+00
1.20E+00
1.00E+00
8.00E-01
VGS=-4.5V
VGS=-10V
VGS=-4.5V
VGS=-10V
ID=-5A
1
3
5
7
9
0
25
50
75 100 125 150 175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
160
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
140
120
100
80
ID=-5A
125°C
125°C
25°C
60
25°C
40
1E-06
0.0
20
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
8
VDS=-15V
ID=-5A
1000
800
600
400
200
0
Ciss
6
4
Coss
2
Crss
0
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
-Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
10
1
TJ(Max)=150°C
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TA=25°C
10µs
RDS(ON)
100µs
limited
1ms
0.1s
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
0.1
PD
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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