AO4802 [AOS]
Dual N-Channel Enhancement Mode Field Effect Transistor; 双N沟道增强型场效应晶体管
| 型号： | AO4802 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Rev 2: Nov 2004
AO4802, AO4802L ( Green Product )
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4802 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. They
offer operation over a wide gate drive range from 1.8V
to 12V. The two devices may be used individually, in
parallel or to form a bidirectional blocking switch.
AO4802L ( Green Product ) is offered in a lead-free
package.
VDS (V) = 30V
ID = 7A
R
R
R
R
DS(ON) < 26mΩ (VGS = 10V)
DS(ON) < 30mΩ (VGS = 4.5V)
DS(ON) < 40mΩ (VGS = 2.5V)
DS(ON) < 70mΩ (VGS = 1.8V)
D1
D2
S2
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
S1
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
30
V
V
VGS
±12
TA=25°C
TA=70°C
7
Continuous Drain
Current A
Pulsed Drain Current B
A
ID
6
40
IDM
TA=25°C
TA=70°C
2
PD
W
Power Dissipation
1.44
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Symbol
Typ
48
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
74
Steady-State
Steady-State
RθJL
35
Alpha & Omega Semiconductor, Ltd.
AO4802, AO4802L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
DS=0V, VGS=±12V
DS=VGS ID=250µA
GS=4.5V, VDS=5V
100
1
nA
V
VGS(th)
ID(ON)
0.6
30
0.8
A
VGS=10V, ID=7A
22
28
26
36
30
40
70
mΩ
TJ=125°C
mΩ
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
VGS=2.5V, ID=4A
VGS=1.8V, ID=2A
25
34
52
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=5A
IS=1A
12
17
S
V
A
0.66
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
767
111
82
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=7A
1.3
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
10
1.2
3.1
5
nC
nC
nC
ns
ns
ns
ns
ns
nC
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.2Ω,
5.5
39
4.7
15
7.1
RGEN=6Ω
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
trr
Body Diode Reverse Recovery time
IF=5A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery charge IF=5A, dI/dt=100A/µs
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4802, AO4802L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
20
16
12
8
10V
4.5V
VDS=5V
2.5V
2V
125°C
4
VGS=1.5V
25°C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
VGS(Volts)
2
2.5
3
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
70
60
50
40
30
20
10
1.8
1.6
1.4
1.2
1
VGS=1.8V
VGS=2.5V
VGS=4.5V
VGS=10V
VGS=2.5V
VGS=1.8V
VGS=4.5V
VGS=10V
15
0.8
0
5
10
D (A)
20
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
I
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
70
60
50
40
30
20
10
125°C
ID=5A
125°C
25°C
25°C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4802, AO4802L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
5
VDS=15V
ID=7A
4
Ciss
3
2
1
0
Coss
Crss
0
2
4
6
8
10
12
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µs
30
20
10
0
1ms
10ms
0.1s
1s
TJ(Max)=150°C
TA=25°C
10s
DC
10
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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