AO4801AL [AOS]
暂无描述;型号: | AO4801AL |
厂家: | ALPHA & OMEGA SEMICONDUCTORS |
描述: | 暂无描述 |
文件: | 总5页 (文件大小:279K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AO4801
30V P-Channel MOSFET
General Description
Product Summary
VDS
-30V
The AO4801 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications. It may be used in a
common drain arrangement to form a bidirectional
blocking switch.
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS =-4.5V)
RDS(ON) (at VGS =-2.5V)
-5A
< 48mΩ
< 57mΩ
< 80mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
D2
D1
Top View
Bottom View
SOIC-8
Top View
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
S2
S1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
-30
V
V
VGS
±12
TA=25°C
TA=70°C
-5
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
ID
A
-4
IDM
-28
IAS, IAR
EAS, EAR
11
A
Avalanche energy L=0.3mH C
18
mJ
TA=25°C
Power Dissipation B
TA=70°C
2
PD
W
°C
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
74
RθJL
32
40
Rev 4: Feb. 2011
www.aosmd.com
Page 1 of 5
AO4801
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS= ±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-5A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-1.3
nA
V
VGS(th)
ID(ON)
-0.5
-28
-0.9
A
40
48
48
60
57
80
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-3.5A
45
mΩ
mΩ
S
VGS=-2.5V, ID=-2.5A
60
VDS=-5V, ID=-5A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
18
-0.7
-1
V
Maximum Body-Diode Continuous Current
-2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
645
80
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
55
VGS=0V, VDS=0V, f=1MHz
4
7.8
12
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
7
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-15V, ID=-5A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
1.5
2.5
6.5
3.5
41
9
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=6Ω
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
trr
IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
11
3.5
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in
any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: Feb. 2011
www.aosmd.com
Page 2 of 5
AO4801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
15
10
5
-10V
VDS=-5V
-4.5V
-3V
125°C
-2.5V
25°C
VGS=-2V
4
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
90
70
50
30
10
1.8
1.6
1.4
1.2
1
VGS=-4.5V
ID=-3.5A
VGS=-10V
VGS=-2.5V
ID=-5A
VGS=-4.5V
VGS=-2.5V
ID=-2.5A
VGS=-10V
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
100
80
1.0E+01
1.0E+00
ID=-5A
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
60
25°C
40
25°C
20
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 4: Feb. 2011
www.aosmd.com
Page 3 of 5
AO4801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
5
4
3
2
1
0
VDS=-15V
ID=-5A
1000
800
600
400
200
0
Ciss
Coss
Crss
0
3
6
9
12
0
5
10
15
20
25
30
Q
g (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
10000
1000
100
10
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
100µs
1ms
10ms
TJ(Max)=150°C
TA=25°C
1s
0.1
10s
DC
1
0.0
0.00001
0.001
0.1
10
1000
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 4: Feb. 2011
www.aosmd.com
Page 4 of 5
AO4801
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 4: Feb. 2011
www.aosmd.com
Page 5 of 5
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